1N5817G
THRU
1N5819G
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
Features
• Metal silicon junction, majority carrier conduction
• For surface mount application
• Low power loss, high efficiency
• High current capability, low forward voltage drop.
• High surge capability
• For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications.
• High temperature soldering guaranteed: 250°C/10 seconds at
terminals
Maximum Ratings
• Case: Molded Glass Body
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Typical Thermal Resistance; 30°C/W Junction To Lead
75°C/W Junction To Ambient
MCC
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
1N5817G 20V 14V 20V
1N5818G 30V 21V 30V
1N5819G 40V 28V 40V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 1.0A TA = 25°C*
Peak Forward Surge
Current IFSM 30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage VF 0.5V IFM = 1.0A;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR 1.0mA
10mA TJ = 25°C
TJ = 125°C
Typical Junction
Capacitance CJ 110pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 µsec, Duty cycle 1%
omponents
20736 Marilla Street Chatsworth
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MCC
A
B
C
D
D
Cathode
Mark
MIN MAX MIN MAX
A 0.166 0.205 4.10 7.60
B 0.080 0.107 2.00 3.60 Diameter
C 0.026 0.034 0.70 0.90 Diameter
D 1.000 ----- 25.40 -----
DIMENSIONS
DIM INCHES MM NOTE
DO-41G
www.mccsemi.com
Revision: 3 2002/12/31
TM
Micro Commercial Components
1N5817G thru 1N5819G
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT( AMPERES)
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) PEAK FORWARD SURGE
CURRENT(AMPERES)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
REVERSE VOLTAGE. VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE%
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE ( C)
T=25
J
T =125
J
PULSE WIDTH=300 S
1% DUTY CYCLE
At rated T
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
L
T =125 C
J
T=25 C
J
T=75 C
J
P. C . B . m o u n t e d o n
0.24 X 0.24"(6.0 X 6.0mm)
copper pad areasH
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
T=25 C
f=1.0MH
J
Z
Vsig=50mVp-p
RESISTIVE OR INDUCTIVE LOAD
°C
°C
MCC
www.mccsemi.com
Revision: 3 2002/12/31
TM
Micro Commercial Components
