DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 FEATURES QUICK REFERENCE DATA * High current SYMBOL * Two current gain selections VCEO collector-emitter voltage IC APPLICATIONS * Linear voltage regulators * 1.2 W total power dissipation. PARAMETER MIN. MAX. UNIT - 20 V collector current (DC) - 1 A ICM peak collector current - 2 A hFE DC current gain * Low side switch BC868 85 375 - * Supply line switch for negative voltages BC868-25 160 375 - * MOSFET driver DESCRIPTION * Audio (pre-) amplifier. NPN medium power transistor (see "Simplified outline, symbol and pinning" for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PHILIPS EIAJ BC868 SOT89 SC-62 CAC BC868-25 SOT89 SC-62 CDC SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BC868 2 DESCRIPTION 1 emitter 2 collector 3 base 3 1 sym042 3 2 1 ORDERING INFORMATION PACKAGE TYPE NUMBER BC868 BC868-25 2004 Nov 08 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 2 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 1 A ICM peak collector current - 2 A IBM peak base current - 200 mA Ptot total power dissipation notes 1 and 2 - 0.5 W notes 1 and 3 - 0.85 W notes 1 and 4 Tamb 25 C - 1.2 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb ambient temperature -65 +150 C Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. MLE323 1.6 handbook, halfpage Ptot (W) 1.2 (1) (2) 0.8 (3) 0.4 0 -65 -5 55 115 175 Tamb (C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) Standard footprint. Fig.1 Power derating curves. 2004 Nov 08 3 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT notes 1 and 2 250 K/W notes 1 and 3 147 K/W notes 1 and 4 104 K/W 20 K/W Tamb 25 C thermal resistance from junction to ambient thermal resistance from junction to solder point Tamb 25 C Rth(j-s) Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. MLE324 103 handbook, full pagewidth Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) = P 1 (10) tp T t tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) =0.01. (10) = 0. Fig.2 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 4 tp (s) 103 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 32 mm handbook, halfpage 2 mm 2.8 mm 10 mm 3.5 mm 40 mm 1.8 mm 10 mm 1.1 mm 2.5 mm 1 mm 0.5 mm 0.7 mm 0.8 mm 5 mm 3.7 mm 3.96 mm MLE321 1.6 mm MLE322 Fig.3 SOT89 standard mounting conditions for reflow soldering. Fig.4 Printed-circuit board for SOT89; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS - - 100 nA - 10 A - - 100 nA VCE = 10 V; IC = 5 mA 50 - - VCE = 1 V; IC = 500 mA 85 - 375 VCE = 1 V; IC = 1 A 60 - - 160 - 375 IC = 1 A; IB = 100 mA - - 500 mV hFE DC current gain BC868 BC868-25 VCE = 1 V; IC = 500 mA collector-emitter saturation voltage VBE base-emitter voltage UNIT - VEB = 5 V; IC = 0 A VCEsat MAX. VCB = 25 V; IE = 0 A emitter-base cut-off current DC current gain TYP. VCB = 25 V; IE = 0 A; Tj = 25 C IEBO hFE MIN. VCE = 10 V; IC = 5 mA - - 700 mV VCE = 1 V; IC = 1 A - - 1 V Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz - 22 - pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 - MHz 2004 Nov 08 5 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 MLE331 2.4 MLE332 1 halfpage handbook, handbook, halfpage (1) IC (A) (2) VBE (3) (V) (4) 1.6 (5) (6) (7) (8) 0.8 (9) (10) 10-1 10-4 0 1 0 2 3 5 4 10-3 10-2 10-1 (1) (2) (3) (4) IB = 10 mA. IB = 9 mA. IB = 8 mA. IB = 7 mA. Fig.5 (5) IB = 6 mA. (9) IB = 2 mA. (6) IB = 5 mA. (7) IB = 4 mA. (8) IB = 3 mA. (10) IB = 1 mA. 10 1 IC (A) VCE (V) VCE = 1 V. Collector current as a function of collector-emitter voltage; typical values. Fig.6 MLE333 103 halfpage handbook, Base-emitter voltage as function of collector current; typical values. MLE334 1 handbook, halfpage VCEsat hFE (V) 10-1 10-2 102 10-4 10-3 10-2 10-1 1 10-3 10-4 10 IC (A) 10-2 10-1 1 10 IC (A) VCE = 1 V. IC/IB = 10. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. 2004 Nov 08 10-3 6 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 7 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Nov 08 8 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 (c) Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/07/pp9 Date of release: 2004 Nov 08 Document order number: 9397 750 13859