BC868-25T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Dec 02 2004 Nov 08

DISCRETE SEMICONDUCTORS

BC868

NPN medium power transistor;

20 V, 1 A

ook, halfpage

M3D109

2004 Nov 08 2

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

FEATURES

•High current

•Two current gain selections

•1.2 W total power dissipation.

APPLICATIONS

•Linear voltage regulators

•Low side switch

•Supply line switch for negative voltages

•MOSFET driver

•Audio (pre-) amplifier.

QUICK REFERENCE DATA

DESCRIPTION

NPN medium power transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL PARAMETER MIN. MAX. UNIT

VCEO collector-emitter

voltage −20 V

ICcollector current (DC) −1A

ICM peak collector current −2A

hFE DC current gain

BC868 85 375 −

BC868-25 160 375 −

PRODUCT OVERVIEW

TYPE NUMBER PACKAGE MARKING CODE

PHILIPS EIAJ

BC868 SOT89 SC-62 CAC

BC868-25 SOT89 SC-62 CDC

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

ORDERING INFORMATION

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING

PIN DESCRIPTION

BC868 1 emitter

2 collector

3 base

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC868 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

BC868-25

321

sym042

2004 Nov 08 3

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Refer to SOT89 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.

3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −32 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −5V

ICcollector current (DC) −1A

ICM peak collector current −2A

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤25 °C

notes 1 and 2 −0.5 W

notes 1 and 3 −0.85 W

notes 1 and 4 −1.2 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

handbook, halfpage

-65 -5 Tamb (°C)

Ptot

(W)

(1)

(2)

(3)

175

1.6

1.2

0.4

0.8

115

MLE323

Fig.1 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) Standard footprint.

2004 Nov 08 4

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT89 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.

3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient Tamb ≤25 °C

notes 1 and 2 250 K/W

notes 1 and 3 147 K/W

notes 1 and 4 104 K/W

Rth(j-s) thermal resistance from junction to solder point Tamb ≤25 °C 20 K/W

handbook, full pagewidth

103

102

10−1

10−510−410−310−210−11

Zth

(K/W)

tp (s)

10 102103

MLE324

δ =

(10)

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Fig.2 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ=0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

2004 Nov 08 5

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

MLE321

3.5 mm

2 mm

2.8 mm

1.8 mm 1.1

0.7 mm 0.8 mm

3.7 mm

Fig.3 SOT89 standard mounting conditions for

reflow soldering.

handbook, halfpage

MLE322

40 mm

32 mm

2.5 mm

10 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

10 mm

Fig.4 Printed-circuitboardforSOT89;mounting

pad for collector 1 cm2.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =25V; I

E=0A −−100 nA

VCB =25V; I

E= 0 A; Tj=25°C−−10 µA

IEBO emitter-base cut-off current VEB =5V; I

C=0A −−100 nA

hFE DC current gain BC868

VCE = 10 V; IC= 5 mA 50 −−

VCE = 1 V; IC= 500 mA 85 −375

VCE = 1 V; IC=1A 60 −−

hFE DC current gain BC868-25

VCE = 1 V; IC= 500 mA 160 −375

VCEsat collector-emitter saturation voltage IC= 1 A; IB= 100 mA −−500 mV

VBE base-emitter voltage VCE =10V; I

C=5mA −−700 mV

VCE =1V; I

C=1A −−1V

Cccollector capacitance IE=i

e= 0 A; VCB =10V;

f = 1 MHz −22 −pF

fTtransition frequency VCE =5V; I

C= 50 mA;

f = 100 MHz 40 170 −MHz

2004 Nov 08 6

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

handbook, halfpage

(1)

(5)

(7)

(A)

VCE (V)

2.4

1.6

0.8

015

234

MLE331

(8)

(10)

(6)

(4)

(3)

(2)

(9)

Fig.5 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB= 10 mA.

(2) IB= 9 mA.

(3) IB= 8 mA.

(4) IB= 7 mA.

(5) IB= 6 mA.

(6) IB= 5 mA.

(7) IB= 4 mA.

(8) IB= 3 mA.

(9) IB= 2 mA.

(10) IB= 1 mA.

handbook, halfpage

10−1

MLE332

10−410−310−210−11IC (A)

VBE

(V)

Fig.6 Base-emittervoltageasfunctionofcollector

current; typical values.

VCE =1V.

handbook, halfpage

102

103

MLE333

10−410−310−210−11IC (A)

hFE

Fig.7 DC current gain as a function of collector

current; typical values.

VCE =1V.

handbook, halfpage

MLE334

10−1

10−2

10−3

10−4IC (A)

VCEsat

(V)

10−1

10−2

10−3110

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

2004 Nov 08 7

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 99-09-13

04-08-03

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 08 8

Philips Semiconductors Product speciﬁcation

NPN medium power transistor;

20 V, 1 A BC868

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

atthese oratanyother conditionsabovethose given inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythat suchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Contact information

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Printed in The Netherlands R75/07/pp9 Date of release: 2004 Nov 08 Document order number: 9397 750 13859