MCP1640CT-I/CHY - MICROCHIP

 2011 Microchip Technology Inc. DS22234B-page 1

MCP1640/B/C/D

Features

• Up to 96% Typical Efficiency

• 800 mA Typical Peak Input Current Limit:

-I

OUT > 100 mA @ 1.2V VIN, 3.3V VOUT

-I

OUT > 350 mA @ 2.4V VIN, 3.3V VOUT

-I

OUT > 350 mA @ 3.3V VIN, 5.0V VOUT

• Low Start-up Voltage: 0.65V, typical 3.3V VOUT

@ 1 mA

• Low Operating Input Voltage: 0.35V, typical

3.3VOUT @ 1 mA

• Adjustable Output Voltage Range: 2.0V to 5.5V

• Maximum Input Voltage  VOUT < 5.5V

• Automatic PFM/PWM Operation (MCP1640C):

- PFM Operation Disabled (MCP1640B/D)

- PWM Operation: 500 kHz

• Low Device Quiescent Current: 19 µA, typical

PFM Mo de

• Internal Synchrono us Rectifi er

• Intern al Com pen sation

• Inrush Current Limiting and Internal Soft-Start

• Selectable, Logic Controlled, Shutdown States:

- True Load Disconnect Option (MCP1640B)

- Input to Output Bypass Option (MCP1640C /D)

• Shutdown Current (All States): < 1 µA

• Low Noise, Anti-Ringing Control

• Overtemperature Protection

• Available Packages:

- 6-Lead SOT23

- 8-Lead 2x3 DFN

Applications

• One, Two and Three Cell Alkaline and NiM H/NiCd

Portab le Products

• Single Cell Li-Ion to 5V Converters

• Li Coin Cell Powered Devices

• Personal Medical Products

• Wireless Sensors

• Handheld Instruments

• GPS Receivers

• Bluetooth Headsets

• +3.3V to +5.0V Distributed Power Supply

General Description

The MCP1640/B/C/D is a compact, high-efficiency,

fixed frequency, synchronous step-up DC-DC con-

verter . It provides an easy-to-use power su pply solution

for appli ca tion s p ow er ed b y e ith er on e-c el l, tw o -ce ll, or

three-cell alkaline, NiCd, NiMH, one-cell Li-Ion or

Li-Polymer batteries.

Low-vo lta ge techn olo gy allows the regula tor to sta rt up

withou t hi gh i nrus h curre nt or output v ol t ag e ov ers ho ot

from a low 0.6 5V input. High efficienc y is accomplis hed

by integrating the low resistance N-Channel Boost

switch and synchronous P-Channel switch. All

compen sa tio n a nd protect ion ci rcu itry a re i ntegrated to

minimize external components. For standby

applications, the MCP1640 operates and consumes

only 19 µA while operating at no load, and provides a

true disconnect from input to output while shut down

(EN = GND). Additional device options are available

that operate in PWM-only mode and connect input to

output bypass while shut down.

A “true” load disconnect mode provides input to output

isolation while disabled by removing the normal boost

regulator diode path from input to output. A Bypass

mode option connects the input to the output using the

integrated low resistance P-Channel MOSFET, which

provides a low bias keep-alive voltage for circuits

operating in Deep Sleep mode. Both options consume

less than 1 µA of input current.

Output voltage is set by a small external resistor

divider. Two package options are available, 6-Lead

SOT23 and 8-Lead 2x3 DFN.

Package Types

MCP1640

8-Lead 2x3 DFN*

PGND

SGND

VOUTS

VOUTP

5SW

VIN

VFB

6VIN

VFB

GND

5VOUT

MCP1640

6-Le ad SOT 23

* Includes Exposed Thermal Pad (EP); see Table 3-1.

0.65V Start-up Synchronous Boost Regulator with True

Output Dis con ne ct or In put/Output Bypas s Opti on

MCP1640/B/C/D

DS22234B-page 2  2011 Microchip Technology Inc.

VIN

GND

VFB

VIN

0.9V to 1.7V

VOUT

3.3V @ 100 mA

COUT

10 µF

CIN

4.7 µF

4.7 µH

VOUT

976 K

562 K

ALKALINE

VIN

PGND

VFB

VIN

3.0V to 4.2V

VOUT

5.0V @ 300 mA

COUT

10 µF

CIN

4.7 µF

4.7 µH

VOUTS

976 K

309 K

VOUTP

SGND

LI-ION

Eff i ci ency vs. I OUT f or 3. 3VOUT

40.0

60.0

80.0

100.0

0.1 1.0 10.0 100.0 1000.0

Output Curre nt (m A)

E ffi ciency (% )

VIN = 0.8V VIN = 1.2V

VIN = 2.5V

 2011 Microchip Technology Inc. DS22234B-page 3

MCP1640/B/C/D

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

EN, FB, VIN, VSW, VOUT - GND..................... ..... .+6.5V

EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V)

Output Short Circuit Current.......................Continuous

Output Curren t Byp ass Mo de....... ...... ..............400 mA

Power Dissipation ............................Internally Limited

Storage Temperature .........................-65oC to +150oC

Ambient Temp. with Power Applied......-40oC to +85oC

Operati ng Jun ct ion Temperat ure........-40oC to +125oC

ESD Protection On All Pins:

HBM........................................................3 kV

MM........................................................300 V

† Notice: S tresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the devi ce at those or any other c onditions ab ove those

indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, I

OUT =15mA,

TA = +25°C.

Boldface specifications apply over the TA range of -40oC to +85oC.

Parameters Sym Min Typ Max Units Conditions

Input Characteristics

Minimum Startup Voltage VIN —0.65 0.8 VNote 1

Minimum Input Voltage After

Start-Up VIN —0.35 — VNote 1

Output Voltage Adjust Range VOUT 2.0 5.5 VV

OUT  VIN; Note 2

Maximum Output Current IOUT 100 150 — mA 1.2V VIN, 2.0V VOUT

150 — mA 1.5V VIN, 3.3V VOUT

350 — mA 3.3V VIN, 5.0V VOUT

Feedbac k Voltage VFB 1.175 1.21 1.245 V—

Feedbac k Inpu t Bias C urren t IVFB —10 —pA—

Quiescent Current – PFM

Mode IQPFM — 19 30 µA Mea sured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA;

Note 3

Quiescent Current – PWM

Mode IQPWM — 220 — µA Measured at VOUT; EN = VIN

IOUT = 0 mA; Note 3

Quiescent Current – Shutdown IQSHDN —0.7 2.3µAV

OUT = EN = GND;

Includes N-Channel and

P-Channel Switch Leakage

NMOS Switch Leakage INLK —0.3 1 µAV

IN = VSW = 5V;

VOUT = 5.5V

VEN = VFB = GND

PMOS Switch Leakage IPLK — 0.05 0.2 µA VIN = VSW = GND;

VOUT = 5.5V

NMOS Switch ON Resi stance RDS(ON)N —0.6 — VIN = 3.3V, ISW = 100 mA

Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).

2: For VIN > VOUT, VOUT will not remain in regulation.

3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be

estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

4: 220 resistive load, 3.3VOUT (15 mA).

5: Peak current limit determined by characterization, not production tested.

MCP1640/B/C/D

DS22234B-page 4  2011 Microchip Technology Inc.

TEMPERATURE SPECIFICATIONS

PMOS Switch ON Resistance RDS(ON)P —0.9 — VIN = 3.3V, ISW = 100 mA

NMOS Peak Switch Current

Limit IN(MAX) 600 850 — mA Note 5

VOUT Accuracy VOUT%-3 —+3 % Includes Line and Load

Regulation; VIN = 1.5V

Line Regulation VOUT/

VOUT) /

VIN|

-1 0.01 1%/V VIN = 1.5V to 3V

IOUT = 25 mA

Load Regulation VOUT /

VOUT|-1 0.01 1%I

OUT = 25 mA to 100 mA;

VIN = 1.5V

Maximu m Duty Cycle DCMAX 88 90 — %

Switching Frequency fSW 425 500 575 kHz

EN Input Logic High VIH 90 ——

%of VIN IOUT = 1 mA

EN Input Logic Low VIL —— 20 %of VIN IOUT = 1 mA

EN Input Leakage Current IENLK —0.005 — µA VEN = 5V

Soft-start Time tSS —750 —µS EN Low to High, 90% of

VOUT; Note 4

Thermal Shutdown Die

Temperature TSD —150 —C

Die Temperature Hysteresis TSDHYS —10 —C

Electrical Specifications:

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Operati ng Junction Temperat ure

Range TJ-40 — +125 °C Steady State

Storage Temperature Range TA-65 — +150 °C

Maximum Junction Temperature TJ— — +150 °C Transient

Package Thermal Resistances

Thermal Resistance, 5L-TSOT23 JA — 192 — °C/W EIA/JESD51-3 Standard

Thermal Resistance, 8L-2x3 DFN JA —93 —°C/W

DC CHARACTERISTICS (CONTINUE D)

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, I

OUT =15mA,

TA = +25°C.

Boldface specifications apply over the TA range of -40oC to +85oC.

Parameters Sym Min Typ Max Units Conditions

Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).

2: For VIN > VOUT, VOUT will not remain in regulation.

3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be

estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

4: 220 resistive load, 3.3VOUT (15 mA).

5: Peak current limit determined by characterization, not production tested.

 2011 Microchip Technology Inc. DS22234B-page 5

MCP1640/B/C/D

2.0 TYPICAL PERFORM ANCE CURVES

Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C

IN =10 µF, L

=4.7µH, V

OUT =3.3V, I

LOAD =15mA, T

A=+25°C.

FIGURE 2-1: VOUT IQ vs. Ambient

Temperature in PFM Mode.

FIGURE 2-2: VOUT IQ vs. Ambient

Temperature in PWM Mode.

FIGURE 2-3: Maximum IOUT vs. VIN.

FIGURE 2-4: 2.0V VOUT PFM / PWM

Mode Efficiency vs. IOUT.

FIGURE 2-5: 3.3V VOUT PFM / PWM

Mode Efficiency vs. IOUT.

FIGURE 2-6: 5.0V VOUT PFM / PWM

Mode Efficiency vs. IOUT.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purp oses only . The p erformance chara cteristic s listed herein ar e

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

10.0

12.5

15.0

17.5

20.0

22.5

25.0

27.5

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

IQ PFM Mode (µA)

VOUT = 2. 0V

VOUT = 5.0V

VOUT = 3.3V

VIN = 1.2V

150

175

200

225

250

275

300

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

IQ PWM Mode (µA)

VOUT = 3.3V

VOUT = 5.0V

VIN = 1. 2V

100

200

300

400

500

600

00.511.522.533.544.55

VIN (V)

IOUT (mA)

VOUT = 3.3V

VOUT = 2.0V

VOUT = 5.0V

100

0.01 0.1 1 10 100 1000

IOUT (mA)

Efficiency (%)

VOUT = 2.0V

VIN = 0.8V

VIN = 1.2V

VIN = 1.6V

PWM / PFM

PWM ONLY

100

0.01 0.1 1 10 100 1000

IOUT (mA)

Ef fici ency (%)

VOUT = 3.3V

VIN = 0.8V VIN = 1.2V

IN = 2.5V

PWM / PFM

PWM ONLY

100

0.01 0.1 1 10 100 1000

IOUT (mA)

Ef fici ency (%)

PWM / PFM

PWM ONLY

VOUT = 5.0V

VIN = 1.2V VIN = 1.8V

VIN = 2.5V

MCP1640/B/C/D

DS22234B-page 6  2011 Microchip Technology Inc.

Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C

IN =10 µF, L

=4.7µH, V

OUT =3.3V, I

LOAD =15mA, T

A= +25°C.

FIGURE 2-7: 3.3V VOUT vs. Ambient

Temperature.

FIGURE 2-8: 3.3V VOUT vs. Ambient

Temperature.

FIGURE 2-9: 3.3V VOUT vs. VIN.

FIGURE 2-10: Minimum Start-up and

Shutdown VIN into Resistive Load vs. IOUT.

FIGURE 2-11: FOSC vs. Ambient

Temperature.

FIGURE 2-12: PWM Pulse Skippi ng Mod e

Threshold vs. IOUT.

3.285

3.29

3.295

3.3

3.305

3.31

3.315

3.32

3.325

3.33

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature ( °C)

VOUT (V)

IOUT = 15 mA

VIN = 0.8V

VIN = 1.8V

VIN = 1.2V

3.26

3.28

3.30

3.32

3.34

3.36

3.38

-40 -25 -10 5 20 35 50 65 80

Ambient Tempera ture (°C)

VOUT (V)

IOUT = 15 mA

VIN = 1.5V

IOUT = 50 mA

IOUT = 5 mA

3.20

3.24

3.28

3.32

3.36

3.40

0.8 1.2 1.6 2 2.4 2.8

VIN (V)

VOUT (V)

TA = - 40°C

IOUT = 5 mA

TA = 25°C

TA = 85°C

0.25

0.40

0.55

0.70

0.85

1.00

0 20406080100

IOUT (mA )

VIN (V)

Startup

Shutdown

VOUT = 3.3V

480

485

490

495

500

505

510

515

520

525

-40 -25 -10 5 20 35 50 65 80

Ambi en t Tempe r at ure (°C)

Switching Frequency (kHz)

VOUT = 3.3V

0.5

1.5

2.5

3.5

4.5

012345678910

IOUT (mA )

VIN (V)

OUT = 3.3V

VOUT = 5.0V

VOUT = 2.0V

 2011 Microchip Technology Inc. DS22234B-page 7

MCP1640/B/C/D

Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C

IN =10 µF, L

=4.7µH, V

OUT =3.3V, I

LOAD =15mA, T

A=+25°C.

FIGURE 2-13: Input No Load Current vs.

VIN.

FIGURE 2-14: N-Channel and P-Channel

RDSON vs. > of VIN or VOUT.

FIGURE 2-15: PFM / PWM Threshold

Current vs. VIN.

FIGURE 2-16: MCP1640 3.3V VOUT PFM

Mode Waveforms.

FIGURE 2-17: MCP1640B 3.3V VOUT

PWM Mode Wavefor ms.

FIGURE 2-18: MCP1640/B High Load

Waveforms.

100

1000

10000

0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5

VIN (V)

IIN (µA)

VOUT = 3. 3 V VOUT = 5. 0 V

VOUT = 2.0V

VOUT = 2.0V VOUT = 3.3V

VOUT = 5.0V

PWM / PFM

PWM ONLY

1 1.5 2 2.5 3 3.5 4 4.5 5

> VIN or V

OUT

Switch Resistance (Ohms)

P - Ch ann e l

N - Channel

00.511.522.533.54

VIN (V)

IOUT (mA )

VOUT = 2.0V VOUT = 3.3V

VOUT = 5.0V

MCP1640/B/C/D

DS22234B-page 8  2011 Microchip Technology Inc.

Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C

IN =10 µF, L

=4.7µH, V

OUT =3.3V, I

LOAD =15mA, T

A= +25°C.

FIGURE 2-19: 3.3V Start-up After Enable.

FIGURE 2-20: 3.3V Start-up when VIN =

VENABLE.

FIGURE 2-21: MCP1640 3.3V VOUT Load

Transient Waveforms.

FIGURE 2-22: MCP1640B 3.3V VOUT Load

Transie nt Waveforms.

FIGURE 2-23: MCP1640B 2.0V VOUT Load

Transie nt Waveforms.

FIGURE 2-24: 3.3V VOUT Line Transient

Waveforms.

 2011 Microchip Technology Inc. DS22234B-page 9

MCP1640/B/C/D

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

3.1 Switch Node Pin (SW)

Connect the inductor from the input voltage to the SW

pin. The SW pin carries inductor current and can be as

high as 800 mA peak. The integrated N-Channel switch

drain and integrated P-Channel switch sour ce are inter-

nally connected at the SW node.

3.2 Ground Pin (GND)

The ground or re turn pi n i s u se d fo r circ uit gro und con-

nection. Length of trace from input cap return, output

cap return, and GND pin should be made as short as

possible to minimize noise on the GND pin. In the

SOT23-6 package, a single ground pin is used.

3.3 Enable Pin (EN)

The EN pin is a logic-level input used to enable or

disable device switching, and lower quiescent current

while disabled. A logic high (>90% of VIN) will enable

the regulator output. A logic low (<20% of VIN) will

ens ure that the re gulator is disabled.

3.4 Feedback Voltage Pin (FB)

The FB pin is used to provide output voltage regulation

by usin g a resistor divi der . The FB v oltage wil l be 1.21V

typical with the output voltage in regulation.

3.5 Output Voltage Pin ( VOUT)

The output voltage pin connects the integrated

P-Channel MOSFET to the output capacitor. The FB

voltage divider is also connected to the VOUT pin for

voltage re gulation.

3.6 Power Supply Input Voltag e Pin

(VIN)

Connect the input voltage source to VIN. The input

source should be decoupled to GND with a 4.7 µF

minimum cap ac i to r.

3.7 Signal Ground Pin (SGND)

The signal ground pin is used as a return for the

integrated VREF and error amplifier. In the 2x3 DFN

package, the SGND and power ground (PGND) pins are

connected externally.

3.8 Power Ground Pin (PGND)

The power ground pin is used as a return for the high-

current N-Channel switch. In the 2x3 DFN package, the

PGND and SGND pins are connected externally.

3.9 Output Voltage Sense Pin (VOUTS)

The output voltage sense pin connects the regulated

output voltage to the internal bias circuits. In the 2x3

DFN package, the VOUTS and output voltage power

(VOUTP) pins are connected externally.

3.10 Output Voltage Power Pin (V OUTP)

The output voltage power pin connects the output volt-

age to the switch node. High current flows through the

integrated P-Channel and out of this pin to the output

capacitor and output. In the 2x3 DFN package, VOUTP

and VOUTS are connected externally.

3.11 Exposed Thermal Pad (EP)

There is no internal electrical connection between the

Exposed Thermal Pad (EP) and the SGND and PGND

pins. T hey m ust be conn ected to the same poten tial o n

the Printed Circuit Board (PCB).

Name MCP1640/B/C/D

SOT23 MCP1640/B/C/D

2x3 DFN Description

SW 1 5 Switch Node, Boost Inductor Input Pin

GND 2 — Grou nd Pin

EN 3 4 Enable Control Input Pin

FB 4 1 Feedback Voltage Pin

VOUT 5 — Output Voltage Pin

VIN 6 8 Input Voltage Pin

SGND — 2 Signal Ground Pin

PGND — 3 Power Ground Pin

VOUTS — 7 Output Voltage Sense Pin

VOUTP — 6 Output Voltage Power Pin

EP — 9 Exposed Thermal Pad (EP); must be connected to VSS.

MCP1640/B/C/D

DS22234B-page 10  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 11

MCP1640/B/C/D

4.0 DETAILED DESCRIPTION

4.1 Device Option Overview

The MCP1640/B/C/D family of devices is capable of

low start-up voltage and delivers high efficiency over a

wide load range for single cell, two cell, three cell

alkaline, NiMH, NiCd and single cell Li-Ion battery

inputs. A high level of integration lowers total system

cost, eases implementation and reduces board area.

The devi ces feature low startup v oltage, adjus table out-

put voltage, PWM/PFM mode operation, low IQ, inte-

grated synchronous switch, internal compensation, low

noise anti-ring control, inrush current limit, and soft

start.

There are two feature options for the MCP1640/B/C/D

family:

• PWM/PFM mode or PWM-Only mode

• “True Output Disconne ct” mo de or Input Bypass

mode

4.1.1 PWM/PFM MODE OPTION

The MCP1640C devices use an automatic switchover

from PWM to PFM mode for light load conditions to

maximize efficiency over a wide range of output

current. Duri ng PFM mode, higher peak current is used

to pump the output up to the threshold limit. While

operatin g in PFM or PW M mo de, th e P -Chan nel s witch

is used as a syn chr ono us recti fier, turning off when the

inductor current reaches 0 mA to maximize efficiency.

In PFM mode, a comparator is used to terminate

switching when the output voltage reaches the upper

threshold limit. Once switching has terminated, the

output voltage will decay or coast down. During this

period, very low IQ is consumed from the device and

input so urce, which k eeps p ower ef ficienc y high at lig ht

load.

The dis advan tag es of PW M/PFM m ode a re high er out-

put ripple voltage and variable PFM mode frequency.

The PFM m ode frequency is a function o f input volt age,

output voltage and load. While in PFM mode, the boost

converter pump s the output up at a switching frequency

of 500 kHz.

4.1.2 PWM-ONLY MODE OPTION

The MCP1640B/D devices disable PFM mode

switching, and operate only in PWM mode over the

entire load range. During periods of light load opera-

tion, the MCP1640B/D continues to operate at a con-

stant 500 kHz switching frequency, keeping the output

ripple voltage lower than PFM mode.

During PWM-Only mod e, the MCP1640 B/D P-Cha nnel

switch acts as a synchronous rectifier by turning off (to

prevent reverse current flow from the output cap back

to the input) in order to keep efficiency high.

For noise immunity, the N-Channel MOSFET current

sense is blanked for approximately 100 ns. With a typ-

ical minimum duty cycle of 100 ns, the MCP1640B/D

continues to s witch at a constant frequency under light

load conditions. Figure 2-12 represents the input volt-

age versus load current for the pulse skipping threshold

in PWM-Only mode. At lighter loads, the MCP1640B/D

devices begin to skip pulses.

4.1.3 TRUE OUTPUT DISCONNECT

MODE OPTION

The MCP1640B devices incorporate a true output

disconnect feature. With the EN pin pulled low, the

output of the MCP1640B is isolated or disconnected

from the input by turning off the integrated P-Channel

switch and removing the switch bulk diode connection.

This removes the DC path that is typical in boost con-

verters, which allows the output to be disconnected

from the in put. Durin g this m ode, less than 1 µA of cur-

rent is consumed from the input (battery). True output

disconnect does not discharge the output, the output

volt age is held up by the external COUT capacitance.

4.1.4 INPUT BYPASS MODE OPTION

The MCP1640C/D devices incorporate the Input

Bypas s shut down option . With the EN in put p ull ed lo w,

the output is connected to the input using the internal

P-Channel MOSFET. In this mode, the current draw

from the input (battery) is less than 1 µA with no load.

The Input Byp as s mode is used when the in put volt ag e

range is high enou gh for the lo ad to opera te in Sleep or

low IQ mode. When a higher regulated outp ut voltag e is

necessary to operate the application, the EN input is

pulled high, enabling the boost converter.

TABLE 4-1: PART NUMBER SELECTION

Part

Number PWM/

PFM PWM-

Only True

Disconnect Input

Bypass

MCP1640 X X

MCP1640B X X

MCP1640C X X

MCP1640D X X

MCP1640/B/C/D

DS22234B-page 12  2011 Microchip Technology Inc.

4.2 Functional Descri ption

The MCP1640/B/C/D is a compact, high-efficiency,

fixed frequency, step-up DC-DC converter that

provides an easy-to-use power supply solution for

applications powered by either one-cell, two-cell, or

three-cell alkaline, NiCd, or NiMH, or one-cell Li-Ion or

Li-Polym er batt erie s.

Figure 4-1 depicts the functional block diagram of the

MCP1640/B/C/D.

FIGURE 4-1: MCP1640/B/ C/D Bloc k Diag ram.

4.2.1 LOW-VOLTAGE START-UP

The MCP1640/B/C/D is capable of starting from a low

input voltage. Start-up voltage is typically 0.65V for a

3.3V output and 1 mA resistive load.

When enabled, the internal start-up logic turns the

rectifying P-Channel switch on until the output

capacitor is charged to a value close to the input

voltage. The rectifying switch is current-limited during

this time. After charging the output capacitor to the

input voltage, the device starts switching. If the input

volt age is below 1.6V, the device runs open-loop with a

fixed duty cycle of 70% until the output reaches 1.6V.

During this time, the boost switch current is limited to

50% of its nominal value. Once the output voltage

reaches 1.6V, normal closed-loop PWM operation is

initiated.

The MCP1640/B/C/D charges an internal capacitor

with a very weak current source. The voltage on this

capacitor, in turn, slowly ramps the current limit of the

boost switch to its nominal value. The soft-start

capacitor is completely discharged in the event of a

commanded shutdown or a thermal shutdown.

There is no undervoltage lockout feature for the

MCP1640/ B/C/D. The device will start u p at t he lowest

possible voltage and run down to the lowest possible

volt age. For typic al battery applications , this may re sult

in “motor-boating” (emitting a low-frequency tone) for

deeply dis c harg ed batteries.

GATE DRIVE

AND

SHUTDOWN

CONTROL

LOGIC

VIN

VOUT

GND

ISENSE

IZERO

ILIMIT

.3V

SOFT-START

DIRECTION

CONTROL

OSCILLATOR SLOPE

COMP. S

PWM/PFM

LOGIC

1.21V

INTERNAL

BIAS

 2011 Microchip Technology Inc. DS22234B-page 13

MCP1640/B/C/D

4.2.2 PWM-ONLY MODE OPERATION

In normal PWM operation, the MCP1640/B/C/D

operates as a fixed frequency, synchronous boost

converter. The switching frequency is internally

maintained with a precision oscillator typically set to

500 kHz. The MCP1640B/D devices will operate in

PWM-Only mode even during periods of light load

operatio n. By operati ng in PWM-O nly mode, the output

ripple remains low and the frequency is constant.

Operating in fixed PWM mode results in lower

efficiency during light load operation (when compared

to PFM mode (MCP1640C)).

Lossle ss current sensing c onverts the peak curre nt sig-

nal to a voltage to sum with the internal slope compen-

sation. T his sum med s ignal is co mpared to the volt ag e

error amplifier output to provide a peak current control

command for the PWM signal. The slope

compensation is adaptive to the input and output

voltage. Therefore, the converter provides the proper

amount of slope compensation to ensure stability, but is

not excessive, which causes a loss of phase margin.

The peak current limit is set to 800 mA typical.

4.2.3 PFM MODE OPERATION

The MCP1640C devices are capable of operating in

normal PWM mode and PFM mode to maintain high

efficiency at all loads. In PFM mode, the output ripple

has a vari able freq uen cy co mpone nt that ch anges with

the input voltage and output current. With no load, the

quiescent current draw from the output is typically

19 µA. The PFM mode can be disabled in selected

device options.

PFM opera tion is i nitiated if the outp ut loa d current fall s

below a n inte r n al l y pro g r am me d th r es ho ld. T he ou tpu t

voltage is continuously monitored. When the output

voltage drops below its nominal value, PFM operation

pulses one or several times to bring the output back

into regulation. If the output load current rises above

the upper threshold, the MCP1640C transitions

smoothly into PWM mode.

4.2.4 ADJUSTABLE OUTPUT VOLTAGE

The MCP1640/B/C/D output voltage is adjustable with

a resistor divider over a 2.0V minimum to 5.5V

maximum range. High value resistors are

recommended to minimize quiescent current to keep

efficiency high at light loads.

4.2.5 ENABLE PIN

The enable pin is used to turn the boost converter on

and off. The enable threshold voltage varies with input

voltage. To enable the boost converter, the EN voltage

level must be greater than 90% of the VIN voltage. To

disable the boost converter, the EN voltage must be

less than 20% of the VIN voltage.

4.2.6 INTERNAL BIAS

The MCP1640/B/C/D gets its start-up bias from VIN.

Once the output exceeds the input, bias comes from

the output. Therefore, once started, operation is

completely independent of VIN. Operation is only

limited by the output power level and the input source

series r esistance. When started, the output will remain

in regulation down to 0.35V typical with 1 mA output

current for low source impedance inputs.

4.2.7 INTERNAL COMPENSATION

The error amplifier, with its associated compensation

network, completes the closed loop system by

comparing the output voltage to a reference at the

input of the error amplifier, and feeding the amplified

and inverted signal to the control input of the inner

current loop. The compensation network provides

phase leads and lags at appropriate frequencies to

cancel excessive phase lags and leads of the power

circuit. All necessary compensation components and

slope comp ensation are in tegrated.

4.2.8 SHORT CIRCUIT PROTECTION

Unlike most boost converters, the MCP1640/B/C/D

allows its output to be shorted during normal operation.

The internal current limit, and overtemperature

protecti on, limit excessive stress and protect the device

during periods of short circuit, overcurrent and over-

temperature. While operating in Bypass mode, the

P-Channel current limit is inhibited to minimize

quiescent current.

4.2.9 LOW NOISE OPERATION

The MCP1640/B/C/D integrates a low noise anti-ring

switch that damps the oscillations typically observed at

the swi tch nod e of a boo st conv erter w hen ope rating i n

the Discontinuous Inductor Current mode. This

removes the high frequency radiated noise.

4.2.10 OVERTEMPERATURE

PROTECTION

Overtemperature protection circuitry is integrated into

the MCP 1640/B/C/D . This circu itry moni tors the devic e

junction temperature and shuts the device off if the

junction temperature exceeds the typical +150oC

threshold. If this threshold is exceeded, the device will

automatically restart when the junction temperature

drops by 10oC. The soft start is reset during an

overtemperature condition.

MCP1640/B/C/D

DS22234B-page 14  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 15

MCP1640/B/C/D

5.0 APPLICATION INFORMATION

5.1 Typical Applications

The MCP1640/B/C/D synchronous boost regulator

operates over a wide input and output voltage range.

The power effi ciency is high for several decades of load

range. Output current capability increases with input

voltage and decreases with increasing output voltage.

The maximum output current is based on the N-Chan-

nel pea k current limit. T ypical c haracterization curves in

this dat a she et are pres ented to displa y the typ ical o ut-

put current capability.

5.2 Adjustable Output Voltage

Calculations

To calculate the resistor divider values for the

MCP1640/B/C/D, the following equation can be used.

Where RTOP is connected to VOUT, RBOT is connected

to GND and both are connected to the FB input pin.

EQUATION 5-1:

Example A:

VOUT = 3.3V

VFB = 1.21V

RBOT = 309 k

RTOP = 533.7 k (Standard Value = 536 k)

Example B:

VOUT = 5.0V

VFB = 1.21V

RBOT = 309 k

RTOP = 967.9 k (Standard Value = 976 k)

There are some potential issues with higher value

resistors. For small surface mount resistors,

environment contamination can create leakage paths

that significantly change the resistor divider that effect

the output voltage. The FB input leakage current can

also impact the divider and change the output voltage

tolerance.

5.3 Input Capacitor Selection

The boost input current is smoothed by the boost

inductor reducing the amount of filtering necessary at

the input. Some capacitance is recommended to

provide decoupling from the source. Low ESR X5R or

X7R are wel l s uite d s inc e th ey hav e a l ow tempe r atu re

coefficient and small size. For most applications,

4.7 µF of capacit an ce is su ffi cient at the input . For hig h

power applicatio ns that have high source impedance or

long lea ds , c onn ec ting the ba ttery to the input 10 µF of

capacitance is recommended. Additional input

capacitance can be added to provide a stable input

voltage.

Table 5-1 contains the recommended range for the

input capacito r valu e.

5.4 Output Capacitor Selection

The output capacitor helps provide a stable output

voltage during sudden load transients and reduces the

output voltage ripple. As with the input capacitor, X5R

and X7R ceramic capacitors are well suited for this

application.

The MCP1640/B/C/D is internally compensated so

output capacitance range is limited. See Table 5-1 for

the recommended output capacitor range.

While the N -C han nel switc h is on , the outp ut current is

supplied by the output capacitor COUT. The am ount o f

output capacitance and equivalent series resistance

will have a significant effect on the output ripple

voltage. While COUT provides load current, a voltage

drop also appears across its internal ESR that results

in ripple voltag e.

EQUATION 5-2:

Where dV represents the ripple voltage and dt

represen ts the O N ti me of the N- Channe l sw itch (D * 1/

FSW).

Table 5-1 contains the recommended range for the

input and output capacitor value.

RTOP RBOT

VOUT

VFB

---------------- 1–







=

TABLE 5-1: CAPACITOR VALUE RANGE

CIN COUT

Min 4.7 µF 10 µF

Max none 100 µF

IOUT COUT dV

-------





=

MCP1640/B/C/D

DS22234B-page 16  2011 Microchip Technology Inc.

5.5 Inductor Selection

The MC P1640/B/C/D is designed to be use d with smal l

surface mount inductors; the inductance value can

range from 2.2 µH to 10 µH. An inductance value of

4.7 µH is recommended to achieve a good balance

between inductor size, converter load transient

response and minimized noise.

Several parameters are used to select the correct

inductor: maximum rated current, saturation current

and copper resist ance (ESR). For boost con verters, the

inductor current can be much higher than the output

current. The lower the inductor ESR, the higher the

efficiency of the converter, a common trade-off in size

versus efficiency.

Peak current is the maximum or limit, and saturation

current typically specifies a point at which the induc-

tance has rolled off a percentage of the rated value.

This can range from a 20% to 40% reduction in induc-

tance. As inductance rolls off, the inductor ripple cur-

rent increases as does the peak switch current. It is

important to keep the inductance from rolling off too

much, causing switch current to reach the peak limit.

5.6 Thermal Calculations

The MCP1640/B/C/D is available in two different

packages, 6-L ead SOT23 and 8-Lead 2x3 DFN. By cal-

culating the power dissipation and applying the pack-

age the rmal resi sta nc e, (JA), the junction tem peratu re

is estimated. The maximum continuous junction

temperature rating for the MCP1640/B/C/D is +125oC.

To quickly estimate the internal power dissipation for

the switching boost regulator, an empirical calculation

using measured efficiency can be used. Given the

measured efficiency, the internal power dissipation is

estima ted by Equation 5-3.

EQUATION 5-3:

The difference between the first term – input power,

and the second term – power delivered, is the internal

MCP1640/B/C/D power dissipation. This is an esti-

mate, assuming that most of the power lost is internal

to the MCP1640/B/C/D and not CIN, COUT and the

inducto r . The re is some percen tag e of power lost in the

boost inductor, with very little loss in the input and out-

put cap acitors. For a more acc urate estimati on of inter-

nal power dissipation, subtract the IINRMS2*LESR power

dissipation.

5.7 PCB Layout Information

Good printed circuit board layout techniques are

important to any switching circuitry; and, switching

power supplies are no different. When wiring the

switching high current paths, short and wide traces

should be used. Therefore it is important that the input

and outp ut capaci tors be place d as close as p ossible to

the MCP1640/B/C/D to minimize the loop area.

TABLE 5-2: MCP1640/B/C/D

RECOMMENDED INDUCTORS

Part Number Value

(µH) DCR

 (typ) ISAT

(A)

Size

WxLxH

(mm)

Coilcraft®

EPL2014-472 4.7 0.23 1.06 2.0x2.0x1.4

EPL3012-472 4.7 0.165 1.1 3.0x3.0x1.3

MSS4020-472 4.7 0.115 1.5 4.0x4.0x2.0

LPS6225-472 4.7 0.065 3.2 6.0x6.0x2.4

Coiltronics®

SD3110 4.7 0.285 0.68 3.1x3.1x1.0

SD3112 4.7 0.246 0.80 3.1x3.1x1.2

SD3114 4.7 0.251 1.14 3.1x3.1x1.4

SD3118 4.7 0.162 1.31 3.8x3.8x1.2

SD3812 4.7 0.256 1.13 3.8x3.8x1.2

SD25 4.7 0.0467 1.83 5.0x5.0x2.5

Part Number Value

(µH)

DCR



(max)

ISAT

(A)

Size

WxLxH

(mm)

Wurth Elektronik®

WE-TPC T ype

TH 4.7 0.200 0.8 2.8x2.8x1.35

WE-TPC T ype

S4.7 0.105 0.90 3.8x3.8x1.65

WE-TPC T ype

M4.7 0.082 1.65 4.8x4.8x1.8

WE-TPC T ype

X4.7 0.046 2.00 6.8x6.8x2.3

Part Number Value

(µH)

DCR



(max)

ISAT

(A)

Size

WxLxH

(mm)

Sumida®

CMH23 4.7 0.537 0.70 2.3x2.3x1.0

CMD4D06 4.7 0.216 0.75 3.5x4.3x0.8

CDRH4D 4.7 0.09 0.800 4.6x4.6x1.5

EPCOS®

B82462A2472

M000 4.7 0.084 2.00 6.0x6.0x2.5

B82462G4472

M4.7 0.04 1.8 6.3x6.3x3.0

VOUT IOUT



Efficiency

-------------------------------------





VOUT IOUT

–PDis

 2011 Microchip Technology Inc. DS22234B-page 17

MCP1640/B/C/D

The feedback resistors and feedback signal should be

routed aw ay from the switchi ng node and the switching

current l oop. W hen po ssib le, gro und plane s and trace s

should be used to help shield the feedback signal and

minimize noise and magnetic interference.

FIGURE 5-1: MCP1640/B/C/D SO T 23-6 Rec omm end ed Layout.

FIGURE 5-2: MCP1640/B/C/D DFN-8 Recommended Layout.

COUT

LCIN

+VIN

GND

+VOUT

Via to GND P lane

MCP1640

Via for Enable

RTOP

RBOT

COUT

CIN

+VIN

GND

+VOUT

MCP1640

Enable

RTOP

RBOT

GND

Wired on Bottom

Plane

MCP1640/B/C/D

DS22234B-page 18  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 19

MCP1640/B/C/D

6.0 TYPICAL APPLICATION CIRCUITS

FIGURE 6-1: Manganese Lithium Coin Cell Application Using Bypass Mode.

FIGURE 6-2: USB On-The-Go Powered by Li-Ion.

VIN

GND

VFB

VOUT

5.0V @ 5 mA

COUT

10 µF

CIN

4.7 µF

4.7 µH

VOUT

976 K

309 K

MANGANESE LITHIUM

DIOXIDE BUTTON CELL

2.0V TO 3.2V +

FROM PIC® MCU I/O

Note: For applications that can operate directly from the battery input voltage during Sleep mode and

requir e a higher vo lta ge during Norma l Run mode, the MCP1 640C device provide s input to ou t-

put byp ass when disabled. Th e PIC® microcontroller is powered by the output of the MCP1640C.

One of it s I/O pins is used to enable and disable the MC P1640C to control it s bias volta ge. While

operating in Sleep mode, the MCP1640C input quiescent current is typically less than 1 uA.

VIN

PGND

VFB

VIN

3.3V To 4.2V

VOUT

5.0V @ 350 mA

COUT

10 µF

CIN

10 µF

10 µH

VOUTS

976 K

309 K

VOUTP

SGND

LI-ION

MCP1640/B/C/D

DS22234B-page 20  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 21

MCP1640/B/C/D

7.0 PACKAGING INFORMATION

7.1 Package Marking Information (Not to Scale)

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanume ric trac ea bil ity code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked o n one line, it w ill

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

6-Lead SOT-23

XXNN

Example

BZNN

XXX

8-Lead DFN

YWW

AHM

Example

945

Package Marking

MCP1640 BZNN MCP1640C BXNN

MCP1640B BWNN MCP1640D BYNN

Package Marking

MCP1640 AHM MCP1640C AHQ

MCP1640C AHP MCP1640D AHR

MCP1640/B/C/D

DS22234B-page 22  2011 Microchip Technology Inc.

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PIN1IDBY

LASER MARK

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A2 c

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 2011 Microchip Technology Inc. DS22234B-page 23

MCP1640/B/C/D

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP1640/B/C/D

DS22234B-page 24  2011 Microchip Technology Inc.

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BOTTOM VIEW

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 2011 Microchip Technology Inc. DS22234B-page 25

MCP1640/B/C/D

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP1640/B/C/D

DS22234B-page 26  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 27

MCP1640/B/C/D

APPENDIX A: REVISION HISTORY

Revision B (March 2011)

The following is the list of modifications:

1. Updated Table 5-2.

2. Added the package markings tables in

Section 7.0 “Packaging Information”.

Revision A (February 2010)

Original release of this document.

MCP1640/B/C/D

DS22234B-page 28  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 29

MCP1640/B/C/D

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.

Examples:

a) MCP1640-I/MC: 0.65V, Sync Reg.,

8LD-DFN pkg.

b) MCP1640T-I/MC: Tape and Reel,

0.65V, Sync Reg.,

8LD-DFN pkg.

c) MCP1640B-I/MC: 0.65V, Sync Reg.,

8LD-DFN pkg.

d) MCP1640BT-I/MC: Tape and Reel,

0.65V, Sync Reg.,

8LD-DFN pkg.

e) MCP1640C-I/MC: 0.65V, Sync Reg.,

8LD-DFN pkg.

f) MCP1640CT-I/MC: Tape and Reel,

0.65V, Sync Reg.,

8LD-DFN pkg.

g) MCP1640D-I/MC: 0.65V, Sync Reg.,

8LD-DFN pkg.

h) MCP1640DT-I/MC: Tape and Reel,

0.65V, Sync Reg.,

8LD-DFN pkg.

i) MCP1640T-I/CHY: Tape and Reel,

0.65V, Sync Reg.,

6LD SOT-23 pkg.

j) MCP1640BT-I/CHY: Tape and Reel,

0.65V, Sync Reg.,

6LD SOT-23 pkg.

k) MCP1640CT-I/CHY: Tape and Reel,

0.65V, Sync Reg.,

6LD SOT-23 pkg.

l) MCP1640DT-I/CHY: Tape and Reel,

0.65V, Sync Reg.,

6LD SOT-23 pkg.

PART NO. X/XX

PackageTemperature

Range

Device

Device MCP1640: 0.65V, PWM/PFM True Disconnect,

Sync Boost Regulator

MCP1640T: 0.65V, PWM/PFM True Disconnect,

Sync Boost Regulator (Tape and Reel)

MCP1640B: 0.65V, PWM Only True Disconnect,

Sync Boost Regulator

MCP1640BT: 0.65V, PWM Only True Disconnect,

Sync Boost Regulator (Tape and Reel)

MCP1640C: 0.65V, PWM/PFM Input to Output Bypass,

Sync Boost Regulator

MCP1640CT: 0.65V, PWM/PFM Input to Output Bypass,

Sync Boost Regulator (Tape and Reel)

MCP1640D: 0.65V, PWM Only Input to Output Bypass,

Sync Boost Regulator

MCP1640DT: 0.65V, PWM Only Input to Output Bypass,

Sync Boost Regulator (Tape and Reel)

Temperatu re R ang e I = -40C to +85C (Industrial)

Package CH = Plastic Small Outline Transistor (SOT-23), 6-lead

MC = Plastic Dual Flat, No Lead (2x3 DFN), 8-lead

Tape

and Reel

MCP1640/B/C/D

DS22234B-page 30  2011 Microchip Technology Inc.

NOTES:

 2011 Microchip Technology Inc. DS22234B-page 31

Information contained in this publication regarding device

applications a nd the lik e is p ro vided on ly for yo ur con ve nien ce

and may be supers eded by updates . I t is you r r es ponsibil it y to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

KEELOQ, KEELOQ logo, MPL AB, PIC , PI Cmi cro, PI CSTART,

PIC32 logo, rfPIC and UNI/O are registered trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MXDEV, MXLAB, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip

Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Se rial

Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified

logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,

TSHARC, UniWinDriver, WiperLock and ZENA are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip T echnology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-60932-829-0

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its f amily of products is one of t he most secure famili es of its kind on t he market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our

products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hoppi ng

devices, Serial EEPROMs, microperiph erals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

DS22234B-page 32  2011 Microchip Technology Inc.

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02/18/11