2011 Microchip Technology Inc. DS22234B-page 1
MCP1640/B/C/D
Features
Up to 96% Typical Efficiency
800 mA Typical Peak Input Current Limit:
-I
OUT > 100 mA @ 1.2V VIN, 3.3V VOUT
-I
OUT > 350 mA @ 2.4V VIN, 3.3V VOUT
-I
OUT > 350 mA @ 3.3V VIN, 5.0V VOUT
Low Start-up Voltage: 0.65V, typical 3.3V VOUT
@ 1 mA
Low Operating Input Voltage: 0.35V, typical
3.3VOUT @ 1 mA
Adjustable Output Voltage Range: 2.0V to 5.5V
Maximum Input Voltage VOUT < 5.5V
Automatic PFM/PWM Operation (MCP1640C):
- PFM Operation Disabled (MCP1640B/D)
- PWM Operation: 500 kHz
Low Device Quiescent Current: 19 µA, typical
PFM Mo de
Internal Synchrono us Rectifi er
Intern al Com pen sation
Inrush Current Limiting and Internal Soft-Start
Selectable, Logic Controlled, Shutdown States:
- True Load Disconnect Option (MCP1640B)
- Input to Output Bypass Option (MCP1640C /D)
Shutdown Current (All States): < 1 µA
Low Noise, Anti-Ringing Control
Overtemperature Protection
Available Packages:
- 6-Lead SOT23
- 8-Lead 2x3 DFN
Applications
One, Two and Three Cell Alkaline and NiM H/NiCd
Portab le Products
Single Cell Li-Ion to 5V Converters
Li Coin Cell Powered Devices
Personal Medical Products
Wireless Sensors
Handheld Instruments
GPS Receivers
Bluetooth Headsets
+3.3V to +5.0V Distributed Power Supply
General Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, synchronous step-up DC-DC con-
verter . It provides an easy-to-use power su pply solution
for appli ca tion s p ow er ed b y e ith er on e-c el l, tw o -ce ll, or
three-cell alkaline, NiCd, NiMH, one-cell Li-Ion or
Li-Polymer batteries.
Low-vo lta ge techn olo gy allows the regula tor to sta rt up
withou t hi gh i nrus h curre nt or output v ol t ag e ov ers ho ot
from a low 0.6 5V input. High efficienc y is accomplis hed
by integrating the low resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compen sa tio n a nd protect ion ci rcu itry a re i ntegrated to
minimize external components. For standby
applications, the MCP1640 operates and consumes
only 19 µA while operating at no load, and provides a
true disconnect from input to output while shut down
(EN = GND). Additional device options are available
that operate in PWM-only mode and connect input to
output bypass while shut down.
A “true” load disconnect mode provides input to output
isolation while disabled by removing the normal boost
regulator diode path from input to output. A Bypass
mode option connects the input to the output using the
integrated low resistance P-Channel MOSFET, which
provides a low bias keep-alive voltage for circuits
operating in Deep Sleep mode. Both options consume
less than 1 µA of input current.
Output voltage is set by a small external resistor
divider. Two package options are available, 6-Lead
SOT23 and 8-Lead 2x3 DFN.
Package Types
MCP1640
8-Lead 2x3 DFN*
PGND
SGND
EN
VOUTS
VOUTP
1
2
3
4
8
7
6
5SW
VIN
VFB
EP
9
4
1
2
3
6VIN
VFB
SW
GND
EN
5VOUT
MCP1640
6-Le ad SOT 23
* Includes Exposed Thermal Pad (EP); see Table 3-1.
0.65V Start-up Synchronous Boost Regulator with True
Output Dis con ne ct or In put/Output Bypas s Opti on
MCP1640/B/C/D
DS22234B-page 2 2011 Microchip Technology Inc.
VIN
GND
VFB
SW
VIN
0.9V to 1.7V
VOUT
3.3V @ 100 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUT
+
-
976 K
562 K
ALKALINE
VIN
PGND
VFB
SW
VIN
3.0V to 4.2V
VOUT
5.0V @ 300 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUTS
+
-
976 K
309 K
VOUTP
SGND
LI-ION
EN
EN
Eff i ci ency vs. I OUT f or 3. 3VOUT
40.0
60.0
80.0
100.0
0.1 1.0 10.0 100.0 1000.0
Output Curre nt (m A)
E ffi ciency (% )
VIN = 0.8V VIN = 1.2V
VIN = 2.5V
2011 Microchip Technology Inc. DS22234B-page 3
MCP1640/B/C/D
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, VIN, VSW, VOUT - GND..................... ..... .+6.5V
EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V)
Output Short Circuit Current.......................Continuous
Output Curren t Byp ass Mo de....... ...... ..............400 mA
Power Dissipation ............................Internally Limited
Storage Temperature .........................-65oC to +150oC
Ambient Temp. with Power Applied......-40oC to +85oC
Operati ng Jun ct ion Temperat ure........-40oC to +125oC
ESD Protection On All Pins:
HBM........................................................3 kV
MM........................................................300 V
Notice: S tresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the devi ce at those or any other c onditions ab ove those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, I
OUT =15mA,
TA = +25°C.
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Minimum Startup Voltage VIN —0.65 0.8 VNote 1
Minimum Input Voltage After
Start-Up VIN —0.35 VNote 1
Output Voltage Adjust Range VOUT 2.0 5.5 VV
OUT VIN; Note 2
Maximum Output Current IOUT 100 150 mA 1.2V VIN, 2.0V VOUT
150 mA 1.5V VIN, 3.3V VOUT
350 mA 3.3V VIN, 5.0V VOUT
Feedbac k Voltage VFB 1.175 1.21 1.245 V—
Feedbac k Inpu t Bias C urren t IVFB —10 pA
Quiescent Current – PFM
Mode IQPFM 19 30 µA Mea sured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – PWM
Mode IQPWM 220 µA Measured at VOUT; EN = VIN
IOUT = 0 mA; Note 3
Quiescent Current – Shutdown IQSHDN —0.7 2.3µAV
OUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage INLK —0.3 1 µAV
IN = VSW = 5V;
VOUT = 5.5V
VEN = VFB = GND
PMOS Switch Leakage IPLK 0.05 0.2 µA VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resi stance RDS(ON)N —0.6 VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
MCP1640/B/C/D
DS22234B-page 4 2011 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
PMOS Switch ON Resistance RDS(ON)P —0.9 VIN = 3.3V, ISW = 100 mA
NMOS Peak Switch Current
Limit IN(MAX) 600 850 mA Note 5
VOUT Accuracy VOUT%-3 +3 % Includes Line and Load
Regulation; VIN = 1.5V
Line Regulation VOUT/
VOUT) /
VIN|
-1 0.01 1%/V VIN = 1.5V to 3V
IOUT = 25 mA
Load Regulation VOUT /
VOUT|-1 0.01 1%I
OUT = 25 mA to 100 mA;
VIN = 1.5V
Maximu m Duty Cycle DCMAX 88 90 %
Switching Frequency fSW 425 500 575 kHz
EN Input Logic High VIH 90 ——
%of VIN IOUT = 1 mA
EN Input Logic Low VIL —— 20 %of VIN IOUT = 1 mA
EN Input Leakage Current IENLK 0.005 µA VEN = 5V
Soft-start Time tSS 750 µS EN Low to High, 90% of
VOUT; Note 4
Thermal Shutdown Die
Temperature TSD 150 C
Die Temperature Hysteresis TSDHYS 10 C
Electrical Specifications:
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operati ng Junction Temperat ure
Range TJ-40 +125 °C Steady State
Storage Temperature Range TA-65 +150 °C
Maximum Junction Temperature TJ +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23 JA 192 °C/W EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 DFN JA —93 °C/W
DC CHARACTERISTICS (CONTINUE D)
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, I
OUT =15mA,
TA = +25°C.
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters Sym Min Typ Max Units Conditions
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
2011 Microchip Technology Inc. DS22234B-page 5
MCP1640/B/C/D
2.0 TYPICAL PERFORM ANCE CURVES
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10 µF, L
=4.H, V
OUT =3.3V, I
LOAD =15mA, T
A=+25°C.
FIGURE 2-1: VOUT IQ vs. Ambient
Temperature in PFM Mode.
FIGURE 2-2: VOUT IQ vs. Ambient
Temperature in PWM Mode.
FIGURE 2-3: Maximum IOUT vs. VIN.
FIGURE 2-4: 2.0V VOUT PFM / PWM
Mode Efficiency vs. IOUT.
FIGURE 2-5: 3.3V VOUT PFM / PWM
Mode Efficiency vs. IOUT.
FIGURE 2-6: 5.0V VOUT PFM / PWM
Mode Efficiency vs. IOUT.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purp oses only . The p erformance chara cteristic s listed herein ar e
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
-40 -25 -10 5 20 35 50 65 80
Ambient Temperature (°C)
IQ PFM Mode (µA)
VOUT = 2. 0V
VOUT = 5.0V
VOUT = 3.3V
VIN = 1.2V
150
175
200
225
250
275
300
-40 -25 -10 5 20 35 50 65 80
Ambient Temperature (°C)
IQ PWM Mode (µA)
VOUT = 3.3V
VOUT = 5.0V
VIN = 1. 2V
0
100
200
300
400
500
600
00.511.522.533.544.55
VIN (V)
IOUT (mA)
VOUT = 3.3V
VOUT = 2.0V
VOUT = 5.0V
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100 1000
IOUT (mA)
Efficiency (%)
VOUT = 2.0V
VIN = 0.8V
VIN = 1.2V
VIN = 1.6V
PWM / PFM
PWM ONLY
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100 1000
IOUT (mA)
Ef fici ency (%)
VOUT = 3.3V
VIN = 0.8V VIN = 1.2V
V
IN = 2.5V
PWM / PFM
PWM ONLY
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100 1000
IOUT (mA)
Ef fici ency (%)
PWM / PFM
PWM ONLY
VOUT = 5.0V
VIN = 1.2V VIN = 1.8V
VIN = 2.5V
MCP1640/B/C/D
DS22234B-page 6 2011 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10 µF, L
=4.H, V
OUT =3.3V, I
LOAD =15mA, T
A= +25°C.
FIGURE 2-7: 3.3V VOUT vs. Ambient
Temperature.
FIGURE 2-8: 3.3V VOUT vs. Ambient
Temperature.
FIGURE 2-9: 3.3V VOUT vs. VIN.
FIGURE 2-10: Minimum Start-up and
Shutdown VIN into Resistive Load vs. IOUT.
FIGURE 2-11: FOSC vs. Ambient
Temperature.
FIGURE 2-12: PWM Pulse Skippi ng Mod e
Threshold vs. IOUT.
3.285
3.29
3.295
3.3
3.305
3.31
3.315
3.32
3.325
3.33
-40 -25 -10 5 20 35 50 65 80
Ambient Temperature ( °C)
VOUT (V)
IOUT = 15 mA
VIN = 0.8V
VIN = 1.8V
VIN = 1.2V
3.26
3.28
3.30
3.32
3.34
3.36
3.38
-40 -25 -10 5 20 35 50 65 80
Ambient Tempera ture (°C)
VOUT (V)
IOUT = 15 mA
VIN = 1.5V
IOUT = 50 mA
IOUT = 5 mA
3.20
3.24
3.28
3.32
3.36
3.40
0.8 1.2 1.6 2 2.4 2.8
VIN (V)
VOUT (V)
TA = - 40°C
IOUT = 5 mA
TA = 25°C
TA = 85°C
0.25
0.40
0.55
0.70
0.85
1.00
0 20406080100
IOUT (mA )
VIN (V)
Startup
Shutdown
VOUT = 3.3V
480
485
490
495
500
505
510
515
520
525
-40 -25 -10 5 20 35 50 65 80
Ambi en t Tempe r at ure (°C)
Switching Frequency (kHz)
VOUT = 3.3V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
012345678910
IOUT (mA )
VIN (V)
V
OUT = 3.3V
VOUT = 5.0V
VOUT = 2.0V
2011 Microchip Technology Inc. DS22234B-page 7
MCP1640/B/C/D
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10 µF, L
=4.H, V
OUT =3.3V, I
LOAD =15mA, T
A=+25°C.
FIGURE 2-13: Input No Load Current vs.
VIN.
FIGURE 2-14: N-Channel and P-Channel
RDSON vs. > of VIN or VOUT.
FIGURE 2-15: PFM / PWM Threshold
Current vs. VIN.
FIGURE 2-16: MCP1640 3.3V VOUT PFM
Mode Waveforms.
FIGURE 2-17: MCP1640B 3.3V VOUT
PWM Mode Wavefor ms.
FIGURE 2-18: MCP1640/B High Load
Waveforms.
10
100
1000
10000
0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5
VIN (V)
IIN (µA)
VOUT = 3. 3 V VOUT = 5. 0 V
VOUT = 2.0V
VOUT = 2.0V VOUT = 3.3V
VOUT = 5.0V
PWM / PFM
PWM ONLY
0
1
2
3
4
5
1 1.5 2 2.5 3 3.5 4 4.5 5
> VIN or V
OUT
Switch Resistance (Ohms)
P - Ch ann e l
N - Channel
0
2
4
6
8
10
12
14
16
00.511.522.533.54
VIN (V)
IOUT (mA )
VOUT = 2.0V VOUT = 3.3V
VOUT = 5.0V
MCP1640/B/C/D
DS22234B-page 8 2011 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10 µF, L
=4.H, V
OUT =3.3V, I
LOAD =15mA, T
A= +25°C.
FIGURE 2-19: 3.3V Start-up After Enable.
FIGURE 2-20: 3.3V Start-up when VIN =
VENABLE.
FIGURE 2-21: MCP1640 3.3V VOUT Load
Transient Waveforms.
FIGURE 2-22: MCP1640B 3.3V VOUT Load
Transie nt Waveforms.
FIGURE 2-23: MCP1640B 2.0V VOUT Load
Transie nt Waveforms.
FIGURE 2-24: 3.3V VOUT Line Transient
Waveforms.
2011 Microchip Technology Inc. DS22234B-page 9
MCP1640/B/C/D
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current and can be as
high as 800 mA peak. The integrated N-Channel switch
drain and integrated P-Channel switch sour ce are inter-
nally connected at the SW node.
3.2 Ground Pin (GND)
The ground or re turn pi n i s u se d fo r circ uit gro und con-
nection. Length of trace from input cap return, output
cap return, and GND pin should be made as short as
possible to minimize noise on the GND pin. In the
SOT23-6 package, a single ground pin is used.
3.3 Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching, and lower quiescent current
while disabled. A logic high (>90% of VIN) will enable
the regulator output. A logic low (<20% of VIN) will
ens ure that the re gulator is disabled.
3.4 Feedback Voltage Pin (FB)
The FB pin is used to provide output voltage regulation
by usin g a resistor divi der . The FB v oltage wil l be 1.21V
typical with the output voltage in regulation.
3.5 Output Voltage Pin ( VOUT)
The output voltage pin connects the integrated
P-Channel MOSFET to the output capacitor. The FB
voltage divider is also connected to the VOUT pin for
voltage re gulation.
3.6 Power Supply Input Voltag e Pin
(VIN)
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a 4.7 µF
minimum cap ac i to r.
3.7 Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated VREF and error amplifier. In the 2x3 DFN
package, the SGND and power ground (PGND) pins are
connected externally.
3.8 Power Ground Pin (PGND)
The power ground pin is used as a return for the high-
current N-Channel switch. In the 2x3 DFN package, the
PGND and SGND pins are connected externally.
3.9 Output Voltage Sense Pin (VOUTS)
The output voltage sense pin connects the regulated
output voltage to the internal bias circuits. In the 2x3
DFN package, the VOUTS and output voltage power
(VOUTP) pins are connected externally.
3.10 Output Voltage Power Pin (V OUTP)
The output voltage power pin connects the output volt-
age to the switch node. High current flows through the
integrated P-Channel and out of this pin to the output
capacitor and output. In the 2x3 DFN package, VOUTP
and VOUTS are connected externally.
3.11 Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the SGND and PGND
pins. T hey m ust be conn ected to the same poten tial o n
the Printed Circuit Board (PCB).
Pin
Name MCP1640/B/C/D
SOT23 MCP1640/B/C/D
2x3 DFN Description
SW 1 5 Switch Node, Boost Inductor Input Pin
GND 2 Grou nd Pin
EN 3 4 Enable Control Input Pin
FB 4 1 Feedback Voltage Pin
VOUT 5 Output Voltage Pin
VIN 6 8 Input Voltage Pin
SGND 2 Signal Ground Pin
PGND 3 Power Ground Pin
VOUTS 7 Output Voltage Sense Pin
VOUTP 6 Output Voltage Power Pin
EP 9 Exposed Thermal Pad (EP); must be connected to VSS.
MCP1640/B/C/D
DS22234B-page 10 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 11
MCP1640/B/C/D
4.0 DETAILED DESCRIPTION
4.1 Device Option Overview
The MCP1640/B/C/D family of devices is capable of
low start-up voltage and delivers high efficiency over a
wide load range for single cell, two cell, three cell
alkaline, NiMH, NiCd and single cell Li-Ion battery
inputs. A high level of integration lowers total system
cost, eases implementation and reduces board area.
The devi ces feature low startup v oltage, adjus table out-
put voltage, PWM/PFM mode operation, low IQ, inte-
grated synchronous switch, internal compensation, low
noise anti-ring control, inrush current limit, and soft
start.
There are two feature options for the MCP1640/B/C/D
family:
PWM/PFM mode or PWM-Only mode
“True Output Disconne ct” mo de or Input Bypass
mode
4.1.1 PWM/PFM MODE OPTION
The MCP1640C devices use an automatic switchover
from PWM to PFM mode for light load conditions to
maximize efficiency over a wide range of output
current. Duri ng PFM mode, higher peak current is used
to pump the output up to the threshold limit. While
operatin g in PFM or PW M mo de, th e P -Chan nel s witch
is used as a syn chr ono us recti fier, turning off when the
inductor current reaches 0 mA to maximize efficiency.
In PFM mode, a comparator is used to terminate
switching when the output voltage reaches the upper
threshold limit. Once switching has terminated, the
output voltage will decay or coast down. During this
period, very low IQ is consumed from the device and
input so urce, which k eeps p ower ef ficienc y high at lig ht
load.
The dis advan tag es of PW M/PFM m ode a re high er out-
put ripple voltage and variable PFM mode frequency.
The PFM m ode frequency is a function o f input volt age,
output voltage and load. While in PFM mode, the boost
converter pump s the output up at a switching frequency
of 500 kHz.
4.1.2 PWM-ONLY MODE OPTION
The MCP1640B/D devices disable PFM mode
switching, and operate only in PWM mode over the
entire load range. During periods of light load opera-
tion, the MCP1640B/D continues to operate at a con-
stant 500 kHz switching frequency, keeping the output
ripple voltage lower than PFM mode.
During PWM-Only mod e, the MCP1640 B/D P-Cha nnel
switch acts as a synchronous rectifier by turning off (to
prevent reverse current flow from the output cap back
to the input) in order to keep efficiency high.
For noise immunity, the N-Channel MOSFET current
sense is blanked for approximately 100 ns. With a typ-
ical minimum duty cycle of 100 ns, the MCP1640B/D
continues to s witch at a constant frequency under light
load conditions. Figure 2-12 represents the input volt-
age versus load current for the pulse skipping threshold
in PWM-Only mode. At lighter loads, the MCP1640B/D
devices begin to skip pulses.
4.1.3 TRUE OUTPUT DISCONNECT
MODE OPTION
The MCP1640B devices incorporate a true output
disconnect feature. With the EN pin pulled low, the
output of the MCP1640B is isolated or disconnected
from the input by turning off the integrated P-Channel
switch and removing the switch bulk diode connection.
This removes the DC path that is typical in boost con-
verters, which allows the output to be disconnected
from the in put. Durin g this m ode, less than 1 µA of cur-
rent is consumed from the input (battery). True output
disconnect does not discharge the output, the output
volt age is held up by the external COUT capacitance.
4.1.4 INPUT BYPASS MODE OPTION
The MCP1640C/D devices incorporate the Input
Bypas s shut down option . With the EN in put p ull ed lo w,
the output is connected to the input using the internal
P-Channel MOSFET. In this mode, the current draw
from the input (battery) is less than 1 µA with no load.
The Input Byp as s mode is used when the in put volt ag e
range is high enou gh for the lo ad to opera te in Sleep or
low IQ mode. When a higher regulated outp ut voltag e is
necessary to operate the application, the EN input is
pulled high, enabling the boost converter.
TABLE 4-1: PART NUMBER SELECTION
Part
Number PWM/
PFM PWM-
Only True
Disconnect Input
Bypass
MCP1640 X X
MCP1640B X X
MCP1640C X X
MCP1640D X X
MCP1640/B/C/D
DS22234B-page 12 2011 Microchip Technology Inc.
4.2 Functional Descri ption
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, step-up DC-DC converter that
provides an easy-to-use power supply solution for
applications powered by either one-cell, two-cell, or
three-cell alkaline, NiCd, or NiMH, or one-cell Li-Ion or
Li-Polym er batt erie s.
Figure 4-1 depicts the functional block diagram of the
MCP1640/B/C/D.
FIGURE 4-1: MCP1640/B/ C/D Bloc k Diag ram.
4.2.1 LOW-VOLTAGE START-UP
The MCP1640/B/C/D is capable of starting from a low
input voltage. Start-up voltage is typically 0.65V for a
3.3V output and 1 mA resistive load.
When enabled, the internal start-up logic turns the
rectifying P-Channel switch on until the output
capacitor is charged to a value close to the input
voltage. The rectifying switch is current-limited during
this time. After charging the output capacitor to the
input voltage, the device starts switching. If the input
volt age is below 1.6V, the device runs open-loop with a
fixed duty cycle of 70% until the output reaches 1.6V.
During this time, the boost switch current is limited to
50% of its nominal value. Once the output voltage
reaches 1.6V, normal closed-loop PWM operation is
initiated.
The MCP1640/B/C/D charges an internal capacitor
with a very weak current source. The voltage on this
capacitor, in turn, slowly ramps the current limit of the
boost switch to its nominal value. The soft-start
capacitor is completely discharged in the event of a
commanded shutdown or a thermal shutdown.
There is no undervoltage lockout feature for the
MCP1640/ B/C/D. The device will start u p at t he lowest
possible voltage and run down to the lowest possible
volt age. For typic al battery applications , this may re sult
in “motor-boating” (emitting a low-frequency tone) for
deeply dis c harg ed batteries.
GATE DRIVE
AND
SHUTDOWN
CONTROL
LOGIC
VIN
EN
VOUT
GND
ISENSE
IZERO
ILIMIT
.3V
0V
SOFT-START
DIRECTION
CONTROL
OSCILLATOR SLOPE
COMP. S
PWM/PFM
LOGIC
1.21V
INTERNAL
BIAS
SW
FB
EA
2011 Microchip Technology Inc. DS22234B-page 13
MCP1640/B/C/D
4.2.2 PWM-ONLY MODE OPERATION
In normal PWM operation, the MCP1640/B/C/D
operates as a fixed frequency, synchronous boost
converter. The switching frequency is internally
maintained with a precision oscillator typically set to
500 kHz. The MCP1640B/D devices will operate in
PWM-Only mode even during periods of light load
operatio n. By operati ng in PWM-O nly mode, the output
ripple remains low and the frequency is constant.
Operating in fixed PWM mode results in lower
efficiency during light load operation (when compared
to PFM mode (MCP1640C)).
Lossle ss current sensing c onverts the peak curre nt sig-
nal to a voltage to sum with the internal slope compen-
sation. T his sum med s ignal is co mpared to the volt ag e
error amplifier output to provide a peak current control
command for the PWM signal. The slope
compensation is adaptive to the input and output
voltage. Therefore, the converter provides the proper
amount of slope compensation to ensure stability, but is
not excessive, which causes a loss of phase margin.
The peak current limit is set to 800 mA typical.
4.2.3 PFM MODE OPERATION
The MCP1640C devices are capable of operating in
normal PWM mode and PFM mode to maintain high
efficiency at all loads. In PFM mode, the output ripple
has a vari able freq uen cy co mpone nt that ch anges with
the input voltage and output current. With no load, the
quiescent current draw from the output is typically
19 µA. The PFM mode can be disabled in selected
device options.
PFM opera tion is i nitiated if the outp ut loa d current fall s
below a n inte r n al l y pro g r am me d th r es ho ld. T he ou tpu t
voltage is continuously monitored. When the output
voltage drops below its nominal value, PFM operation
pulses one or several times to bring the output back
into regulation. If the output load current rises above
the upper threshold, the MCP1640C transitions
smoothly into PWM mode.
4.2.4 ADJUSTABLE OUTPUT VOLTAGE
The MCP1640/B/C/D output voltage is adjustable with
a resistor divider over a 2.0V minimum to 5.5V
maximum range. High value resistors are
recommended to minimize quiescent current to keep
efficiency high at light loads.
4.2.5 ENABLE PIN
The enable pin is used to turn the boost converter on
and off. The enable threshold voltage varies with input
voltage. To enable the boost converter, the EN voltage
level must be greater than 90% of the VIN voltage. To
disable the boost converter, the EN voltage must be
less than 20% of the VIN voltage.
4.2.6 INTERNAL BIAS
The MCP1640/B/C/D gets its start-up bias from VIN.
Once the output exceeds the input, bias comes from
the output. Therefore, once started, operation is
completely independent of VIN. Operation is only
limited by the output power level and the input source
series r esistance. When started, the output will remain
in regulation down to 0.35V typical with 1 mA output
current for low source impedance inputs.
4.2.7 INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed loop system by
comparing the output voltage to a reference at the
input of the error amplifier, and feeding the amplified
and inverted signal to the control input of the inner
current loop. The compensation network provides
phase leads and lags at appropriate frequencies to
cancel excessive phase lags and leads of the power
circuit. All necessary compensation components and
slope comp ensation are in tegrated.
4.2.8 SHORT CIRCUIT PROTECTION
Unlike most boost converters, the MCP1640/B/C/D
allows its output to be shorted during normal operation.
The internal current limit, and overtemperature
protecti on, limit excessive stress and protect the device
during periods of short circuit, overcurrent and over-
temperature. While operating in Bypass mode, the
P-Channel current limit is inhibited to minimize
quiescent current.
4.2.9 LOW NOISE OPERATION
The MCP1640/B/C/D integrates a low noise anti-ring
switch that damps the oscillations typically observed at
the swi tch nod e of a boo st conv erter w hen ope rating i n
the Discontinuous Inductor Current mode. This
removes the high frequency radiated noise.
4.2.10 OVERTEMPERATURE
PROTECTION
Overtemperature protection circuitry is integrated into
the MCP 1640/B/C/D . This circu itry moni tors the devic e
junction temperature and shuts the device off if the
junction temperature exceeds the typical +150oC
threshold. If this threshold is exceeded, the device will
automatically restart when the junction temperature
drops by 10oC. The soft start is reset during an
overtemperature condition.
MCP1640/B/C/D
DS22234B-page 14 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 15
MCP1640/B/C/D
5.0 APPLICATION INFORMATION
5.1 Typical Applications
The MCP1640/B/C/D synchronous boost regulator
operates over a wide input and output voltage range.
The power effi ciency is high for several decades of load
range. Output current capability increases with input
voltage and decreases with increasing output voltage.
The maximum output current is based on the N-Chan-
nel pea k current limit. T ypical c haracterization curves in
this dat a she et are pres ented to displa y the typ ical o ut-
put current capability.
5.2 Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP1640/B/C/D, the following equation can be used.
Where RTOP is connected to VOUT, RBOT is connected
to GND and both are connected to the FB input pin.
EQUATION 5-1:
Example A:
VOUT = 3.3V
VFB = 1.21V
RBOT = 309 k
RTOP = 533.7 k (Standard Value = 536 k)
Example B:
VOUT = 5.0V
VFB = 1.21V
RBOT = 309 k
RTOP = 967.9 k (Standard Value = 976 k)
There are some potential issues with higher value
resistors. For small surface mount resistors,
environment contamination can create leakage paths
that significantly change the resistor divider that effect
the output voltage. The FB input leakage current can
also impact the divider and change the output voltage
tolerance.
5.3 Input Capacitor Selection
The boost input current is smoothed by the boost
inductor reducing the amount of filtering necessary at
the input. Some capacitance is recommended to
provide decoupling from the source. Low ESR X5R or
X7R are wel l s uite d s inc e th ey hav e a l ow tempe r atu re
coefficient and small size. For most applications,
4.7 µF of capacit an ce is su ffi cient at the input . For hig h
power applicatio ns that have high source impedance or
long lea ds , c onn ec ting the ba ttery to the input 10 µF of
capacitance is recommended. Additional input
capacitance can be added to provide a stable input
voltage.
Table 5-1 contains the recommended range for the
input capacito r valu e.
5.4 Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application.
The MCP1640/B/C/D is internally compensated so
output capacitance range is limited. See Table 5-1 for
the recommended output capacitor range.
While the N -C han nel switc h is on , the outp ut current is
supplied by the output capacitor COUT. The am ount o f
output capacitance and equivalent series resistance
will have a significant effect on the output ripple
voltage. While COUT provides load current, a voltage
drop also appears across its internal ESR that results
in ripple voltag e.
EQUATION 5-2:
Where dV represents the ripple voltage and dt
represen ts the O N ti me of the N- Channe l sw itch (D * 1/
FSW).
Table 5-1 contains the recommended range for the
input and output capacitor value.
RTOP RBOT
VOUT
VFB
---------------- 1



=
TABLE 5-1: CAPACITOR VALUE RANGE
CIN COUT
Min 4.7 µF 10 µF
Max none 100 µF
IOUT COUT dV
dt
-------


=
MCP1640/B/C/D
DS22234B-page 16 2011 Microchip Technology Inc.
5.5 Inductor Selection
The MC P1640/B/C/D is designed to be use d with smal l
surface mount inductors; the inductance value can
range from 2.2 µH to 10 µH. An inductance value of
4.7 µH is recommended to achieve a good balance
between inductor size, converter load transient
response and minimized noise.
Several parameters are used to select the correct
inductor: maximum rated current, saturation current
and copper resist ance (ESR). For boost con verters, the
inductor current can be much higher than the output
current. The lower the inductor ESR, the higher the
efficiency of the converter, a common trade-off in size
versus efficiency.
Peak current is the maximum or limit, and saturation
current typically specifies a point at which the induc-
tance has rolled off a percentage of the rated value.
This can range from a 20% to 40% reduction in induc-
tance. As inductance rolls off, the inductor ripple cur-
rent increases as does the peak switch current. It is
important to keep the inductance from rolling off too
much, causing switch current to reach the peak limit.
5.6 Thermal Calculations
The MCP1640/B/C/D is available in two different
packages, 6-L ead SOT23 and 8-Lead 2x3 DFN. By cal-
culating the power dissipation and applying the pack-
age the rmal resi sta nc e, (JA), the junction tem peratu re
is estimated. The maximum continuous junction
temperature rating for the MCP1640/B/C/D is +125oC.
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
measured efficiency, the internal power dissipation is
estima ted by Equation 5-3.
EQUATION 5-3:
The difference between the first term – input power,
and the second term – power delivered, is the internal
MCP1640/B/C/D power dissipation. This is an esti-
mate, assuming that most of the power lost is internal
to the MCP1640/B/C/D and not CIN, COUT and the
inducto r . The re is some percen tag e of power lost in the
boost inductor, with very little loss in the input and out-
put cap acitors. For a more acc urate estimati on of inter-
nal power dissipation, subtract the IINRMS2*LESR power
dissipation.
5.7 PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry; and, switching
power supplies are no different. When wiring the
switching high current paths, short and wide traces
should be used. Therefore it is important that the input
and outp ut capaci tors be place d as close as p ossible to
the MCP1640/B/C/D to minimize the loop area.
TABLE 5-2: MCP1640/B/C/D
RECOMMENDED INDUCTORS
Part Number Value
(µH) DCR
(typ) ISAT
(A)
Size
WxLxH
(mm)
Coilcraft®
EPL2014-472 4.7 0.23 1.06 2.0x2.0x1.4
EPL3012-472 4.7 0.165 1.1 3.0x3.0x1.3
MSS4020-472 4.7 0.115 1.5 4.0x4.0x2.0
LPS6225-472 4.7 0.065 3.2 6.0x6.0x2.4
Coiltronics®
SD3110 4.7 0.285 0.68 3.1x3.1x1.0
SD3112 4.7 0.246 0.80 3.1x3.1x1.2
SD3114 4.7 0.251 1.14 3.1x3.1x1.4
SD3118 4.7 0.162 1.31 3.8x3.8x1.2
SD3812 4.7 0.256 1.13 3.8x3.8x1.2
SD25 4.7 0.0467 1.83 5.0x5.0x2.5
Part Number Value
(µH)
DCR
(max)
ISAT
(A)
Size
WxLxH
(mm)
Wurth Elektronik®
WE-TPC T ype
TH 4.7 0.200 0.8 2.8x2.8x1.35
WE-TPC T ype
S4.7 0.105 0.90 3.8x3.8x1.65
WE-TPC T ype
M4.7 0.082 1.65 4.8x4.8x1.8
WE-TPC T ype
X4.7 0.046 2.00 6.8x6.8x2.3
Part Number Value
(µH)
DCR
(max)
ISAT
(A)
Size
WxLxH
(mm)
Sumida®
CMH23 4.7 0.537 0.70 2.3x2.3x1.0
CMD4D06 4.7 0.216 0.75 3.5x4.3x0.8
CDRH4D 4.7 0.09 0.800 4.6x4.6x1.5
EPCOS®
B82462A2472
M000 4.7 0.084 2.00 6.0x6.0x2.5
B82462G4472
M4.7 0.04 1.8 6.3x6.3x3.0
VOUT IOUT
Efficiency
-------------------------------------


VOUT IOUT
PDis
=
2011 Microchip Technology Inc. DS22234B-page 17
MCP1640/B/C/D
The feedback resistors and feedback signal should be
routed aw ay from the switchi ng node and the switching
current l oop. W hen po ssib le, gro und plane s and trace s
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
FIGURE 5-1: MCP1640/B/C/D SO T 23-6 Rec omm end ed Layout.
FIGURE 5-2: MCP1640/B/C/D DFN-8 Recommended Layout.
COUT
LCIN
+VIN
GND
GND
+VOUT
Via to GND P lane
MCP1640
Via for Enable
RTOP
RBOT
1
COUT
L
CIN
+VIN
GND
+VOUT
MCP1640
Enable
RTOP
RBOT
GND
Wired on Bottom
Plane
1
MCP1640/B/C/D
DS22234B-page 18 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 19
MCP1640/B/C/D
6.0 TYPICAL APPLICATION CIRCUITS
FIGURE 6-1: Manganese Lithium Coin Cell Application Using Bypass Mode.
FIGURE 6-2: USB On-The-Go Powered by Li-Ion.
VIN
GND
VFB
SW
VOUT
5.0V @ 5 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUT
976 K
309 K
EN
MANGANESE LITHIUM
DIOXIDE BUTTON CELL
2.0V TO 3.2V +
-
FROM PIC® MCU I/O
Note: For applications that can operate directly from the battery input voltage during Sleep mode and
requir e a higher vo lta ge during Norma l Run mode, the MCP1 640C device provide s input to ou t-
put byp ass when disabled. Th e PIC® microcontroller is powered by the output of the MCP1640C.
One of it s I/O pins is used to enable and disable the MC P1640C to control it s bias volta ge. While
operating in Sleep mode, the MCP1640C input quiescent current is typically less than 1 uA.
VIN
PGND
VFB
SW
VIN
3.3V To 4.2V
VOUT
5.0V @ 350 mA
COUT
10 µF
CIN
10 µF
L1
10 µH
VOUTS
+
-
976 K
309 K
VOUTP
SGND
LI-ION
EN
MCP1640/B/C/D
DS22234B-page 20 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 21
MCP1640/B/C/D
7.0 PACKAGING INFORMATION
7.1 Package Marking Information (Not to Scale)
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanume ric trac ea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked o n one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
6-Lead SOT-23
XXNN
Example
BZNN
XXX
8-Lead DFN
YWW
NN
AHM
Example
945
25
Package Marking
MCP1640 BZNN MCP1640C BXNN
MCP1640B BWNN MCP1640D BYNN
Package Marking
MCP1640 AHM MCP1640C AHQ
MCP1640C AHP MCP1640D AHR
MCP1640/B/C/D
DS22234B-page 22 2011 Microchip Technology Inc.
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2011 Microchip Technology Inc. DS22234B-page 23
MCP1640/B/C/D
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1640/B/C/D
DS22234B-page 24 2011 Microchip Technology Inc.
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2011 Microchip Technology Inc. DS22234B-page 25
MCP1640/B/C/D
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1640/B/C/D
DS22234B-page 26 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 27
MCP1640/B/C/D
APPENDIX A: REVISION HISTORY
Revision B (March 2011)
The following is the list of modifications:
1. Updated Table 5-2.
2. Added the package markings tables in
Section 7.0 “Packaging Information”.
Revision A (February 2010)
Original release of this document.
MCP1640/B/C/D
DS22234B-page 28 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 29
MCP1640/B/C/D
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
a) MCP1640-I/MC: 0.65V, Sync Reg.,
8LD-DFN pkg.
b) MCP1640T-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
c) MCP1640B-I/MC: 0.65V, Sync Reg.,
8LD-DFN pkg.
d) MCP1640BT-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
e) MCP1640C-I/MC: 0.65V, Sync Reg.,
8LD-DFN pkg.
f) MCP1640CT-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
g) MCP1640D-I/MC: 0.65V, Sync Reg.,
8LD-DFN pkg.
h) MCP1640DT-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
i) MCP1640T-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
j) MCP1640BT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
k) MCP1640CT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
l) MCP1640DT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
PART NO. X/XX
PackageTemperature
Range
Device
Device MCP1640: 0.65V, PWM/PFM True Disconnect,
Sync Boost Regulator
MCP1640T: 0.65V, PWM/PFM True Disconnect,
Sync Boost Regulator (Tape and Reel)
MCP1640B: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator
MCP1640BT: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator (Tape and Reel)
MCP1640C: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator
MCP1640CT: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator (Tape and Reel)
MCP1640D: 0.65V, PWM Only Input to Output Bypass,
Sync Boost Regulator
MCP1640DT: 0.65V, PWM Only Input to Output Bypass,
Sync Boost Regulator (Tape and Reel)
Temperatu re R ang e I = -40C to +85C (Industrial)
Package CH = Plastic Small Outline Transistor (SOT-23), 6-lead
MC = Plastic Dual Flat, No Lead (2x3 DFN), 8-lead
X
Tape
and Reel
MCP1640/B/C/D
DS22234B-page 30 2011 Microchip Technology Inc.
NOTES:
2011 Microchip Technology Inc. DS22234B-page 31
Information contained in this publication regarding device
applications a nd the lik e is p ro vided on ly for yo ur con ve nien ce
and may be supers eded by updates . I t is you r r es ponsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPL AB, PIC , PI Cmi cro, PI CSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Se rial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-829-0
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its f amily of products is one of t he most secure famili es of its kind on t he market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hoppi ng
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS22234B-page 32 2011 Microchip Technology Inc.
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02/18/11