NTE2524 (NPN) & NTE2525 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
DLow Collector–Emitter Saturation Voltage
DHigh Current and High fT
DExcellent Linearity of hFE
DFast Switching Time
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 1.0 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA
DC Current Gain hFE VCE = 2V, IC = 500mA 100 – 400
VCE = 2V, IC = 6A 35 – –
Gain–Bandwidth Product
NTE2524 fTVCE = 5V, IC = 1A – 180 – MHz
NTE2525 – 130 – MHz
Output Capacitance
NTE2524 Cob VCB = 10V, f = 1MHz – 65 – pF
NTE2525 – 95 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage
NTE2524 VCE(sat) IC = 4A, IB = 200mA –200 400 mV
NTE2525 –250 500 mV
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 200mA –0.95 1.2 V
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞50 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6– – V
Turn–On Time ton VCC = 25V, VBE = –5V, –50 –ns
Storage Time
NTE2524 tstg 10IB1 = –10IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1 –500 –ns
NTE2525 Duty Cycle
≤
1%, Note 1 –450 –ns
Fall Time tf20 ns
Note 1. For NTE2525, the polarity is reversed.
BCE
.197 (5.0)
.256 (6.5) .090 (2.3)
.090 (2.3)
.059 (1.5)
.275
(7.0)
.295
(7.5)
.002 (0.5)
.002(0.5)
