Symbol Parameter Conditions Ratings Unit
VCEO Collector-emitter voltage Output, H –0.5 ～ +40 V
IC Collector current Current per circuit output, L 400 mA
VI Input voltage –40 ～ +40 V
IF Clamping diode forward current 400 mA
VR Clamping diode reverse voltage 40 V
Pd Power dissipation Ta = 25℃, when mounted on board 1.47 W
Topr Operating temperature –20 ～ +75 ℃
Tstg Storage temperature –55 ～ +125 ℃
Package type 16P4X
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APPLICATION
DESCRIPTION
M54531WP are seven-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
PIN CONFIGURATION
FEATURES
'09-03
FUNCTION
M54531WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
●High breakdown voltage (BVCEO≧40V)
●High-current driving (Ic(max) = 400mA)
●With clamping diodes
●Driving available with PMOS IC output
●Wide input voltage range (VI = –40 to +40V)
Drives of relays and printers, digit drives of indication
elements (LEDs and lamps), and MOS-bipolar logic IC
interfaces
The M54531WP each have seven circuits consisting of NPN
Darlington transistors. A serial circuit including a diode and
resistance of 20kΩ is provided between input
t
ransistor
bases and input pins. A spike-killer clamping diode is
provided between each output pin (collector) and COM pin
(pin 9). The output transistor emitters are all connected
t
o
the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O1
→O2
→O3
→O4
→O5
→O6
→O7
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND →COM COMMON
OUTPUT
INPUT
COM
OUTPUT
INPUT
CIRCUIT DIAGRAM
20K
20K
2K
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ～ +75℃)
Limits
Symbol Parameter min typ max Unit
VO Output voltage 0 － 40 V
Duty Cycle no more than 8% 0 － 400
IC
Collector current
(Current per 1 circuit
when 7 circuits are com-
ing on simultaneously) Duty Cycle no more than 30% 0 － 200 mA
IC ≦ 400mA 9 －
VIH “H” input voltage IC ≦ 200mA 6 － 35 V
VIL “L” input voltage 0 － 1 V
Limits
Symbol Parameter Test conditions min typ max Unit
V(BR)CEO Collector-emitter breakdown voltage ICEO = 100μA 40 — — V
VI = 9V, IC = 400mA — 1.3 2.4
VCE(sat) Collector-emitter saturation voltage VI = 6V, IC = 200mA — 1.0 1.6 V
VI = 18V — 1.1 1.8
II Input current VI = 35V — 2.0 3.8 mA
IIR Input reverse current VI = –35V — — –20 μA
VF Clamping diode forward voltage IF = 400mA — 1.4 2.4 V
IR Clamping diode reverse current VR = 40V — — 100 μA
hFE DC amplification factor VCE = 4V, IC = 300mA, Ta = 25℃ 1000 3500 — —
Limits
Symbol Parameter Test conditions min typ max Unit
ton Turn-on time — 30 — ｎｓ
toff Turn-off time CL = 15pF（note 1） — 680 — ｎｓ
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M54531WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ～ +75℃)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ～ +75℃)
* : The typical values are those measured under ambient temperature (Ta) of 25
℃
. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
NOTE 1 TEST CIRCUIT
50Ω CL
RL
VO
PG
IN
OUTP
OPEN
Measured device
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VP = 9VP-P
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TIMING DIAGRAM
OUTPUT
INPUT
50%
50%
ｔon
50%
50%
ｔoff
*
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M54531WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta(℃)
Power dissipation Pd(W)
0 25 50 75 100
0
0.5
1.0
1.5
2.0
M54531WP
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat)(V)
Collector current IC(mA)
0 0.4 0.8 1.2 1.6
0
100
200
300
400
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
•The collector current values
represent the current per circuit.
•Repeated frequency ≧ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25℃
①
40
400
②
③
④
⑤
⑦
⑥
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
•The collector current values
represent the current per circuit.
•Repeated frequency ≧ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75℃
①
40
400
②
③
④
⑤
⑦⑥
DC Amplification Factor
Collector Current Characteristics
Collector current Ic(mA)
DC amplification factor hFE
10
10
7
Ta=25℃
Ta=-20℃
Ta=75℃
VCE=4V
5
3
2
3
10 2
4
7
5
3
2
107532 3
10 2
7 5 32
10 1
Grounded Emitter Transfer Characteristics
Input voltage VI(V)
Collector current IC(mA)
0 1 2 3 4
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
VCE=4V
Ta=25℃
Ta=-20℃
Ta=75℃
VI=6V
4/4
M54531WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Clamping Diode Characteristics
Forward bias voltage VF(V)
Forward bias current IF(mA)
0 0.5 1.0 1.5 2.0
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
Input Characteristics
Input voltage VI(V)
Input current II(mA)
0 5 10 20 25
0
0.5
1.0
1.5
2.0
Ta=25℃
Ta=-20℃
Ta=75℃
15
