To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK16VS-6 HIGH-SPEED SWITCHING USE FK16VS-6 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 -0 (1.5) 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 1 5 0.5 q w e wr VDSS ................................................................................ 300V rDS (ON) (MAX) .............................................................. 0.41 ID ......................................................................................... 16A Integrated Fast Recovery Diode (MAX.) ........150ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter VDSS VGSS ID IDM IS Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current ISM PD Tch Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Tstg -- Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 300 30 16 48 16 V V A A A 48 125 -55 ~ +150 -55 ~ +150 A W C C 1.2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 300V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50 IS = 8A, VGS = 0V Channel to case Thermal resistance Reverse recovery time IS = 16A, dis/dt = -100A/s Unit Min. Typ. Max. 300 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 0.31 2.48 1 4 0.41 3.28 mA V V 6.5 -- -- -- 10.0 1050 220 45 -- -- -- -- S pF pF pF -- -- -- -- 20 40 110 50 -- -- -- -- ns ns ns ns -- 1.5 2.0 V -- -- -- -- 1.00 150 C/W ns PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 0 0 50 100 150 CASE TEMPERATURE TC (C) 200 102 7 5 3 2 tw=10s 100s 101 7 5 3 2 100 7 5 3 2 1ms 10ms TC = 25C Single Pulse DC 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-6 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 125W TC = 25C Pulse Test VGS = 20V 10V 40 30 7V 20 6V 10 0 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 50 5V 0 10 20 30 40 PD = 125W 8 5V 4 0 4 8 12 16 20 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 16 ID = 30A 12 8 16A 4 8A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 DRAIN-SOURCE VOLTAGE VDS (V) 0.8 VGS = 10V 0.6 20V 0.4 0.2 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 32 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25C VDS = 50V Pulse Test 24 16 8 0 TC = 25C Pulse Test 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 DRAIN CURRENT ID (A) 6V DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test 0 16 0 50 20 0 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25C Pulse Test 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC = 25C 75C 125C 3 2 100 7 5 3 2 10-1 0 10 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-6 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 5 Ciss 103 7 5 3 2 Coss 102 7 5 Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 tf tr 3 2 td(on) 5 7 101 2 3 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 16 VDS = 50V 100V 12 200V 8 4 0 101 7 5 5 7 102 2 3 DRAIN CURRENT ID (A) 20 40 60 80 VGS = 0V Pulse Test TC = 125C 32 25C 24 75C 16 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) td(off) 102 7 5 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C ID = 16A 3 2 100 7 5 3 2 10-1 3 2 101 100 20 0 Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 25 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-6 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 101 7 5 3 2 3 2 Irr 101 7 5 101 100 2 3 5 7 102 Tch = 25C Tch = 150C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (-A/s) 102 7 5 Irr 3 2 101 101 7 5 trr Tch = 25C Tch = 150C 2 3 5 7 101 2 3 3 2 100 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 16A VGS = 0V 3 3 VDD = 150V 2 2 trr 3 2 3 2 100 150 CHANNEL TEMPERATURE Tch (C) 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A /s 7 7 VGS = 0V 5 5 VDD = 150V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 REVERSE RECOVERY CURRENT Irr (A) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 T D= tw T Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999