SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE688
SERIES
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT: IC MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
39 (SOT 143 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
18 (SOT 343 STYLE)
PART NUMBER1NE68818 NE68819 NE68830 NE68833 NE68839/39R
EIAJ2 REGISTERED NUMBER 2SC5195 2SC5193 2SC5191 2SC5192/92R
PACKAGE OUTLINE 19 30 33 39
MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
4.5 5 4 4.5 4 4.5 4 4.5
9.5 9 8.5 9
1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
1.5 1.5 1.5 1.5
3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5
8 6.5 6.5 9
Forward Current Gain3 at
VCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100
CRE4Feedback Capacitance at
VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8
PTTotal Power Dissipation mW 150 125 150 200 200
RTH(J-A) Thermal Resistance
(Junction to Ambient) °C/W 833 1000 833 625 625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
30 (SOT 323 STYLE) 33 (SOT 23 STYLE)
California Eastern Laboratories
2SC5194
18
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP
fTGain Bandwidth Product at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
GHz 4 5
fT
GHz 10
NFMIN
dB 1.7 2.5
NFMIN
dB 1.5
|S21E|2
dB 3.0 4.0
|S21E|2
dB 8.5
hFE
NEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
ELECTRICAL CHARACTERISTICS (TA = 25°C)