BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 -- 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2110 to 2170 1300 28 43 18.0 30 32[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-160 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-160 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-160 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G22LS-160 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 36 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLF7G22L-160_7G22LS-160 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 55 W 0.29 K/W All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 2.16 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 34 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 10.8 A - 20 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 0.06 - 7. Test information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 43 W 16.5 18.0 - dB RLin input return loss PL(AV) = 43 W - 15 6.5 dB D drain efficiency PL(AV) = 43 W 27 30 - % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 43 W - 32 28 dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO Conditions output peak-to-average ratio PL(AV) = 100 W; at 0.01 % probability on CCDF Min Typ Max Unit 3.9 4.15 - dB 7.1 Ruggedness in class-AB operation The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1300 mA; PL = 160 W; f = 2110 MHz. BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.2 2-Carrier W-CDMA 5 MHz 001aan987 22 50 Gp (dB) D (%) 20 40 Gp 18 30 (2) (1) 16 20 D 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 1. Power gain and drain efficiency as function of load power; typical values 001aan988 -10 001aan989 -20 ACPR5M (dBc) ACPR10M (dBc) -20 -30 -30 -40 (1) -40 (1) -50 f - 10 MHz (2) f - 5 MHz (2) -50 f + 10 MHz -60 f + 5 MHz -60 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz Fig 2. 38 Fig 3. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan990 40 001aan991 9 RLin (dB) PAR (dB) 30 (1) 6 (1) (2) 20 3 (2) 10 0 28 33 38 43 0 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 4. 43 Input return loss as function of load power; typical values Fig 5. Peak-to-average power ration as function of load power; typical values 7.3 2-Carrier W-CDMA 10 MHz 001aan992 22 50 Gp (dB) D (%) 20 40 Gp 18 30 (2) (1) 16 20 D 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan993 -10 001aan994 -10 ACPR5M (dBc) ACPR10M (dBc) -30 -30 (1) (1) f - 10 MHz (2) f - 5 MHz -50 f + 10 MHz f + 5 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 7. (2) -50 Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 8. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 7.4 1-Carrier W-CDMA 001aan995 22 50 Gp (dB) D (%) 20 40 Gp 18 30 (2) (1) 16 20 D 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 9. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan996 -20 001aan997 -40 ACPR5M (dBc) ACPR10M (dBc) -30 -50 -40 (1) -50 f - 5 MHz f - 10 MHz -60 (2) (1) f + 5 MHz -60 (2) f + 10 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 10. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 11. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 001aan998 8 PAR (dB) (1) 6 (2) 4 2 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 12. Peak-to-average power ration as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.5 IS-95 001aan999 22 50 Gp (dB) D (%) 20 40 Gp 18 30 (2) (1) 16 20 14 10 D 12 28 33 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 13. Power gain and drain efficiency as function of load power; typical values 001aao000 -20 ACPR885k (dBc) 001aao001 -50 ACPR1980k (dBc) -30 -60 -40 (1) -70 (2) -50 (3) (4) (1) -60 -80 (2) (3) (4) -70 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. -90 28 33 38 (1) f = 2110 MHz; f + 1980 kHz (2) f = 2170 MHz; f + 885 kHz (2) f = 2170 MHz; f + 1980 kHz (3) f = 2110 MHz; f 885 kHz (3) f = 2110 MHz; f 1980 kHz (4) f = 2170 MHz; f 885 kHz (4) f = 2170 MHz; f 1980 kHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Product data sheet 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz; f + 885 kHz BLF7G22L-160_7G22LS-160 43 Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aao002 12 PAR (dB) 8 (1) (2) 4 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 16. Peak-to-average power ration as function of load power; typical values 7.6 CW 001aao003 22 60 Gp (dB) D (%) (2) 20 48 (1) Gp 18 36 16 24 D 14 12 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 17. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.7 CW-pulsed 001aao004 22 Gp (dB) 60 D (%) (2) 20 48 (1) Gp 18 36 16 24 D 14 12 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA; tp = 0.10 ms; = 10 %. (1) f = 2110 MHz (2) f = 2170 MHz Fig 18. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.8 Test circuit 50.0 mm 50.0 mm C9 C11 C1 C3 R1 C13 C15 C6 C5 60.0 mm C8 NXP BLF7G22L(S)-160 Input Rev 01 60.0 mm NXP BLF7G22L-160 Output Rev 01 001aao005 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 19. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 19. Component BLF7G22L-160_7G22LS-160 Product data sheet Description Value Remarks C1, C5, C8, C9 multilayer ceramic chip capacitor 68 pF [1] C3, C11 multilayer ceramic chip capacitor 820 pF [2] C6, C13 multilayer ceramic chip capacitor 10 F [3] C15 electrolytic capacitor 470 F; 63 V R1 SMD resistor 12 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 Philips 1206 (c) NXP B.V. 2011. All rights reserved. 11 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.9 Impedance information Table 10. Typical impedance Typical values unless otherwise specified. f ZS ZL MHz 2050 1.39 j4.13 1.41 j3.80 2080 1.67 j3.93 1.38 j3.63 2110 2.01 j3.89 1.35j3.45 2140 2.28j4.09 1.33 j3.28 2170 2.27 j4.47 1.31 j3.12 2200 1.92j4.76 1.28 j2.95 2230 1.42 j4.75 1.26 j2.79 drain ZL gate ZS 001aaf059 Fig 20. Definition of transistor impedance BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 21. Package outline SOT502A BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 22. Package outline SOT502B BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 14 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 11. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 12. Revision history Document ID Release date BLF7G22L-160_7G22LS-160 v.2.1 20111102 Modifications: BLF7G22L-160_7G22LS-160 v.2 Modifications: BLF7G22L-160_7G22LS-160 v.1 BLF7G22L-160_7G22LS-160 Product data sheet * Change notice Supersedes Product data sheet - BLF7G22L-160_7G22LS-160 v.2 Table 3: amended package descriptions 20111020 * * Data sheet status Product data sheet - BLF7G22L-160_7G22LS-160 v.1 The status of this document has been changed to Product data sheet Table 7 on page 3: the minimum value for D has been changed 20110427 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 - (c) NXP B.V. 2011. All rights reserved. 15 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 11. 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Export might require a prior authorization from competent authorities. BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 16 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 -- 2 November 2011 (c) NXP B.V. 2011. All rights reserved. 17 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 2-Carrier W-CDMA 5 MHz . . . . . . . . . . . . . . . . 4 2-Carrier W-CDMA 10 MHz . . . . . . . . . . . . . . . 5 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CW-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Impedance information . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 November 2011 Document identifier: BLF7G22L-160_7G22LS-160