2N3502
2N3503
2N3504
2N3505
Document Number 3067
Issue: 1
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
- 60V
-60V
-5V
-45V
-45V
-5V
3 W
0.7 W 1.3 W
0.4 W
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
APPLICATIONS:
These PNP silicon planar epitaxial trasistors
are designed for digital and analog
applications at current levels up 0.5 amps.
Maximum Voltages
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage
VEBO Emitter – Base Voltage
Maximum Po wer Dissipation
PDTotal Dissipation @ 25°C Case Temperature
PDTotal Dissipation@ 25°C Free Air Temperature
TJStorage Temperature
Operating Junction Temperature
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
TO5 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS(TA= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
13 2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.66 (0.026)
1.14 (0.045)
2N3503
2N3505 2N3502
2N3504
2N3502
2N3503 2N3504
2N3505
-65°C to +200°C
200°C
2N3502
2N3503
2N3504
2N3505
Document Number 3067
Issue: 1
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
Collector to Base
Breakdown Voltage
Emmiter to Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
ICES Collector Cutoff Current
Collector Reverse
Current
hFE DC Current Gain
Collector Saturation
Voltage
VBE(sat) Base Saturation Voltage
FTTransition Frequency
Cob Output Capacitance
ton Turn On Time
toff Turn Off Time
-60
-45
-5
-60
-45 0.07 10
0.05 10
10
10
140 270
115 160 300
135 200
100 150 300
80 120
50 70
50 100
-0.08 -0.25
-0.18 -0.4
-0.5 -1.6
-0.9 -1.0
-1.0 -1.3
-2.0
2 2.50
4.5 8.0
30 40
65 100
2N3503 / 2N3505
2N3502 / 2N3504
2N3503 / 2N3505
2N3502 / 2N3504
VCE = -50V VBE = 0 2N3503 / 2N3505
VCE = -30V VBE = 0 2N3502 / 2N3504
IE= 0 VCB = -50V 2N3503 / 2N3505
t = 150°CV
CB = -30V 2N3502 / 2N3504
IC= 10mA VCE = -10V
IC= 50mA VCE = -1.0V
IC= 1.0mA VCE = -10 V
IC= 150mA VCE = -10V
IC= 10µAV
CE = -10V
IC= 500mA VCE = -10 V t = -55°C
IC= 50mA VCE = -1.0V
IC= 50mA IB= 2.5mA
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 50mA IB= 2.5mA
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 50mA VCE = -20V f = 100MHZ
VCB = -10V IE= 0
IC= 300mA IB1 = 30mA IB2 = -30mA
V
V
V
nA
µA
—
V
V
—
pf
ns
ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated)
IC= 10µΑ IE= 0
IE= 10µΑ IC= 0
BVCBO
IC= 10mΑIB= 0
BVEBO
VCEO
ICBO(150)
VCE(sat)
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PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/ICFTPD
2N3503 PNP TO39 60V 0.6A 25 - 10/10m 200MHz 0.7W
2N3503-JQR-B PNP TO39 60V 0.6A 25 - 10/10m 200MHz 0.7W
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