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c 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.B
NPN small signal transistor
BCX19
Features Dimensions (Unit : mm)
(1) High gain and low saturation voltage.
(2) Complements the BCX17.
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
BCX19
T116
3000
Type
Absolute maximum ratings (Ta=25C)
Collector-emitter voltage (V
BE
=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Collector power dissipation
Junction temperature
Storage temperature
∗ Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
∗2 Mounted on a 15
×
15
×
0.6 mm CERAMIC SUBSTRATE
Parameter
V
CES
V
CEO
V
EBO
P
C
Tj
Tstg
50 V
V
V
A
°C
°C
45
5
0.5
I
C
I
CM
A
1
∗
0.2
0.35
W
W
150
−65 to 150
Symbol Limits Unit
∗2
0.425 W
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Parameter Symbol
BVCES
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
I
CBO
Min.
50
45
5
−
−
−
100
70
−
−
−
−
−
−
−
−
250
−
−
−
−
−
0.1
10
0.62
600
−−
−
5
VI
C= 50μA
IC= 10mA
IE= 50μA
VCB= 20V
VEB= 5V
IC/IB= 500mA/ 50mA
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
VCE= 5V, IE= 20mA, f=100MHz
VCB= 20V, Ta=150°C
V
V
μA
μA
V
−
MHz
μA
Typ. Max. Unit Conditions
VBE(on) −−1.2 VCE= 1V, IC= 500mAV
40 −− VCE= 1V, IC= 500mA
Transition frequency
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
BCX19
0.45
0.95
0.15
0.2Min.
2.4
1.3
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : GU1
BCX19 Data Sheet
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c 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.B
Absolute maximum ratings (Ta=25C)
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
V
CE
=1V
Ta=125ºC
75ºC
25ºC
-55ºC
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
I
B
=50uA
I
B
=0A
I
B
=100uA
I
B
=150uA
I
B
=200uA
I
B
=250uA
I
B
=300uA
I
B
=350uA
I
B
=400uAI
B
=450uAI
B
=500uA
Ta=25ºC 10
100
1000
1 10 100 1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
V
CE
=5V
3V
1V
Fig 1. Gr ounded Emitter Propag ation
Characteristics Fig2. Grounded Emitter Output
Characteristics
Fig3. DC Current Gain vs.
Collector Current (I)
10
100
1000
1 10 100 1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
V
CE
=1V
Ta=125ºC
75ºC
25ºC
-55ºC
0.01
0.1
1
1 10 100 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
I
C
/I
B
=50/1
20/1
10/1
0.01
0.1
1
1 10 100 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=10/1
Ta=125ºC
75ºC
25ºC
-55ºC
Fig4. DC Current Gain vs.
Collector Current (II)
Fig 5. Collector Saturation Voltage
vs. Collector Current (I) Fig 6. Collector Saturation Voltage
vs. Collector Current (II)
50
20
10
5
0.1 0.2 0.5 12 510
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Input-and-output capacity
vs.voltage characteristic
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25 C
f=1MHz
I
E
=0A
EMITTER CURRENT : IE (mA)
500
200
100
-
1
-
2
-
5
-
10
-
20
-
50
Fig.8 Transition frequency
vs.emitter current
TRANSITION
FREQUENCY : f
T
(MH
Z
)
Ta=25 C
Cib
Cob
V
CE
=6V
R1120
A
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