Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RoHS COMPLIANT
RD00HVS1-101,T113is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25 deg.C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-10 V
Pch Channel dissipation Tc=25°C 3.1 W
Pin Input Power Zg=Zl=50Ω 20 mW
ID Drain Current - 200 mA
Tch Channel Temperature - 150 °C
Tstg Storage temperature - -40 to +125 °C
Rth j-c Thermal resistance Junction to case 40 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V
Pout Output power 0.5 0.8 - W
ηD Drain efficiency
VDD=12.5V, Pin=5mW,
f=175MHz,Idq=50mA 50 60 - %
Note: Above parameters, ratings, limits and conditions are subject to change.
OUTLINE DRAWING
LOT No.
0.4+/-0.07
123
0.8 MIN
0.4+/-0.07 0.5+/-0.07
1.5+/-0.1
0.1 MAX
1.5+/-0.1
2.5+/-0.1
TYPE NAME 1.6+/-0.1
φ0.1
4.4+/-0.1
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
3.9+/-0.3
1.5+/-0.1
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
1
2
3
4
0 40 80 120 160 200
A MBIENT TEMPERA TURE Ta( °C)
CHANNEL DISSIPATION Pch(W
)
...
On PCB(*1)
On PCB(*1) with Heat-sink
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vds-Ids CHARACTERISTICS
0
0.5
1
1.5
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs=10V
Vgs-Ids CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
012345
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
Vds VS. Ciss CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta= +25°C
f=1MHz
Vds VS. Coss CHARACTERI STICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Coss(pF)
Ta= +25°C
f=1MHz
Vds VS . Crss CHARACTERISTICS
0
1
2
3
4
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERIST ICS
0
5
10
15
20
25
30
35
-15 -10 -5 0 5 10 15
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Po
ηｄ
Gp
Pin-Po CHARACTERIST ICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 5 10 15 20
Pin(mW)
Pout(W) , Idd(A)
0
20
40
60
80
100
120
ηd(%)
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Vdd-Po CHARACTERISTI CS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
468101214
Vdd(V)
Po(W)
0
40
80
120
160
200
240
280
Idd(mA)
Po
Idd
Ta=25°C
f=175MHz
Pin=5mW
Idq=50mA
Zg=ZI=50 ohm
Pin-Po CHARACTERIST ICS
0
5
10
15
20
25
30
35
-15 -10 -5 0 5 10 15
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=50mA
Po
ηｄ
Gp
Pin-Po CHARACTERIST ICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 5 10 15 20
Pin(mW)
Pout(W) , Idd(A)
0
20
40
60
80
100
120
140
ηd(%)
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=50mA
Vdd-Po CHARACTERISTI CS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
4 6 8 10 12 14
Vdd(V)
Po(W)
0
40
80
120
160
200
240
280
320
Idd(mA)
Po
Idd
Ta=25°C
f=520MHz
Pin=15mW
Idq=50mA
Zg=ZI=50 ohm
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
TEST CIRCUIT(f=520MHz)
Micro strip line width=1.0mm/50 OHM,er:4.8,t=0.6mm
Note:Board material-glass epoxi substrate
L4: Enameled wire 7Turns,D:0.43mm ,2.46mmO.D
L2:LQG11A68N(68nH,murata)
L3: Enameled wire 9Turns,D:0.43mm ,2.46mmO.D
L4
L3
20.5mm
270OHM
L2
18.0mm
RF-out
C1 C2 10uF,50V
10.5mm 4.5mm 4mm
4mm 6.5mm 15mm
L1: Enameled wire 4Turns,D:0.43mm ,2.46mmO.D
240pF
4.7kOHM
18.0mm
Vgg Vdd
250pF
R
F-in 180pF
2mm
18pF
10pF 3pF
4mm
L1
5mm
4.0mm
RD00HVS1
C1,C2:1000pF,0.022uF in parallel
19.5mm
18pF
7.7mm
18pF
W
W
RD00HVS1
2.5mm
10pF
62pF
RF-in 190pF
Vdd
V
gg
19mm
4.7kOHM 0.6mm
C2
C1
RF-out
19mm
10pF
W:Linewidth=1.0mm
C1,C2:1000pF,0.022uFinparallel
Note:Boardmaterial-Glassepoxycopper-cladlaminatesFR-4
Microstriplinewidth=1mm,50OHM,er:4.8,t=0.6mm
520MHz
3.2mm
15pF
6mm
34.5nH
8.5mm
18.1nH6.6nH
4mm
24pF 5pF
10.8nH
22pF
1.2mm 25.8mm
3pF 7pF
15mm
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 1.004 -35.2 13.480 158.7 0.027 66.7 0.928 -24.7
150 0.987 -51.9 12.911 147.1 0.039 56.1 0.889 -36.5
175 0.972 -59.7 12.500 141.6 0.043 50.7 0.865 -42.0
200 0.957 -67.1 12.035 136.2 0.048 45.6 0.843 -47.2
250 0.929 -80.1 11.030 126.6 0.054 37.5 0.796 -56.4
300 0.898 -91.5 10.055 118.7 0.058 30.2 0.754 -64.4
350 0.875 -101.4 9.157 111.3 0.060 23.7 0.716 -71.5
400 0.857 -110.0 8.322 104.9 0.062 18.2 0.688 -77.6
450 0.844 -117.3 7.642 99.3 0.063 13.3 0.668 -83.4
500 0.831 -124.1 6.991 93.9 0.063 8.5 0.652 -88.7
550 0.824 -130.0 6.432 89.5 0.064 4.8 0.640 -93.3
600 0.815 -135.0 5.963 84.9 0.063 1.1 0.633 -97.9
650 0.810 -139.9 5.480 80.7 0.062 -2.3 0.627 -102.1
700 0.809 -144.1 5.103 77.0 0.061 -5.4 0.626 -105.9
750 0.807 -148.1 4.769 73.1 0.060 -8.6 0.625 -109.6
800 0.806 -151.8 4.420 69.9 0.058 -11.0 0.627 -113.4
850 0.808 -155.1 4.161 66.8 0.056 -13.5 0.630 -116.8
900 0.808 -158.0 3.900 63.1 0.054 -16.2 0.634 -120.0
950 0.810 -161.1 3.639 60.3 0.053 -17.8 0.639 -123.3
1000 0.811 -163.9 3.466 57.7 0.051 -20.0 0.645 -126.4
1050 0.814 -166.5 3.254 54.1 0.048 -22.1 0.654 -129.3
1100 0.817 -168.9 3.045 51.9 0.046 -23.5 0.661 -132.1
S11 S21 S12 S22
RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 1.005 -33.4 13.343 160.0 0.024 68.3 0.898 -22.6
150 0.995 -49.7 12.874 149.0 0.034 57.9 0.865 -33.1
175 0.980 -57.5 12.525 143.6 0.038 53.2 0.845 -38.0
200 0.967 -64.6 12.108 138.3 0.042 47.8 0.826 -42.9
250 0.943 -77.5 11.193 129.0 0.047 39.3 0.781 -51.3
300 0.916 -88.9 10.249 121.2 0.052 32.3 0.743 -58.9
350 0.891 -98.7 9.403 113.9 0.054 26.2 0.709 -65.6
400 0.877 -107.6 8.582 107.3 0.056 20.6 0.681 -71.5
450 0.862 -115.0 7.916 101.9 0.057 15.7 0.661 -77.0
500 0.852 -121.9 7.273 96.4 0.057 11.2 0.644 -82.0
550 0.844 -128.1 6.706 91.9 0.057 7.5 0.633 -86.6
600 0.835 -133.3 6.224 87.3 0.058 3.4 0.625 -91.2
650 0.828 -138.3 5.755 83.0 0.056 0.2 0.619 -95.2
700 0.824 -142.7 5.358 79.3 0.056 -2.5 0.618 -99.0
750 0.823 -146.8 5.024 75.4 0.054 -5.8 0.616 -102.9
800 0.820 -150.6 4.671 72.0 0.053 -8.4 0.615 -106.6
850 0.821 -153.9 4.398 68.9 0.051 -10.5 0.618 -110.1
900 0.822 -157.2 4.134 65.2 0.050 -13.3 0.622 -113.2
950 0.823 -160.2 3.853 62.3 0.048 -15.2 0.628 -116.5
1000 0.822 -163.1 3.677 59.7 0.047 -17.2 0.633 -119.8
1050 0.826 -165.9 3.459 56.3 0.044 -19.5 0.640 -122.9
1100 0.828 -168.4 3.241 53.9 0.042 -20.2 0.646 -125.7
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
6/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
r
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
e
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
f
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 17 Aug 2010
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
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