IRFI1010NPbF
HEXFET® Power MOSFET
PD - 95418
S
D
G
VDSS = 55V
RDS(on) = 0.012Ω
ID = 49A
lAdvanced Process Technology
lIsolated Package
lHigh Voltage Isolation = 2.5KVRMS
lSink to Lead Creepage Dist. = 4.8mm
lFully Avalanche Rated
lLead-Free
TO-220 FULLPAK
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
06/16/04
Description
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 58 W
Linear Derating Factor 0.38 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 360 mJ
IAR Avalanche Current43 A
EAR Repetitive Avalanche Energy5.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case 2.6
RθJA Junction-to-Ambient 65
Thermal Resistance
°C/W
IRFI1010NPbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.06 V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.012 ΩVGS = 10V, ID = 26A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 30 S VDS = 25V, ID = 43A
25 µA VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 nA VGS = -20V
QgTotal Gate Charge 130 ID = 43A
Qgs Gate-to-Source Charge 23 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 53 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 11 VDD = 28V
trRise Time 66 ID = 43A
td(off) Turn-Off Delay Time 40 RG = 3.6Ω
tfFall Time 46 RD = 0.62Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 2900 VGS = 0V
Coss Output Capacitance 880 VDS = 25V
Crss Reverse Transfer Capacitance 330 = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance 12 = 1.0MHz
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25Ω, IAS = 43A. (See Figure 12)
t=60s, =60Hz
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF1010N data and test conditions
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 26A, VGS = 0V
trr Reverse Recovery Time 81 120 ns TJ = 25°C, IF = 43A
Qrr Reverse RecoveryCharge 240 370 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
49
290
A
IRFI1010NPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs P ULSE WIDTH
T = 25°C
C
A
4.5V
10
100
1000
0.1 1 10 100
4.5V
I , Drain-to-S ource Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs P ULSE WIDTH
T = 175°C
C
A
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-t o-Sourc e Volta ge (V )
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULS E WID TH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 72A
D
IRFI1010NPbF
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s d s gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20 40 60 80 100 120 140
Q , Total Gate Charge (nC)
G
V , Gate-to-So urce Voltage (V )
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 43A V = 44V
V = 28V
D
DS
DS
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4 2.8
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Singl e Pul s e
C
J
IRFI1010NPbF
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , R ecta ngular Pulse Du r ation (s ec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFI1010NPbF
QG
QGS QGD
V
G
Charge
D.U.T. VD
S
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
200
400
600
800
1000
25 50 75 100 125 150 17
5
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 18A
31A
BOTTOM 43A
DD
D
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
IRFI1010NPbF
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFI1010NPbF
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
TO-220 Full-Pak Part Marking Information
WITH ASSEMBLY
EX AMP LE: THIS IS AN IRFI84 0G
LOT CODE 3432
ASSEMBLED ON WW 24 1999
IN TH E ASSE MB LY LINE "K"
PAR T NU MB E R
LOT CODE
AS S E MB LY
INTERNATIONAL
RECTIFIER
LOGO 34 3 2
924K
IRFI840G
DATE COD E
YE AR 9 = 1999
WEEK 24
LINE K
Note: "P" i n a s sembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
