2SC5200
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TOSHIBA T ransistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 230 V
Collector-emitter voltage VCEO 230 V
Emitter-base voltage VEBO 5 V
Collector current IC 15 A
Base current IB 1.5 A
Collect or power dissipation
(Tc = 25°C) PC 150 W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e . reliabil ity test
report and estimated failure rate, etc).
Unit
: mm
JEDEC
JEITA
TOSHIBA 2-21F1A
Weight : 9.75 g (typ.)
Start of commercial production
1994-09
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 230 V, IE = 0 A 5.0 μA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 5.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 A 230 V
DC current gain
hFE (1)
(Note)
VCE = 5 V, IC = 1 A 55 160
hFE (2) VCE = 5 V, IC = 7 A 35 60
Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A 0.4 3.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 7 A 1.0 1.5 V
Transit i on frequency fT VCE = 5 V, IC = 1 A 30 MHz
Collect or output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz 200 pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
co m patibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Characteristics
indicator
2SC5200
TOSHIBA
JAPAN
Note 2
Part No. (or abbreviation code)
Note: Printed onl y on devices manufactured in Japan
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I
C
– V
CE
Collector current IC
(A)
Collector-emitter voltage VCE (V)
I
C
– V
BE
Collector current IC
(A)
Base-emitter voltage VBE (V)
h
FE
– I
C
DC current gain hFE
Collect or cur re nt IC (A)
Collector-emitter voltage VCE (V)
Collector current I
C
(A)
Collect or cur re nt IC (A)
V
CE (sat)
– I
C
Collector
-
emitter saturation voltage
V
CE
(sat)
(V)
Safe Operating Area
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (pulsed)*
DC operation
Tc = 25°C
3
10
30
50
100 ms*
10 ms*
1 ms*
VCEO max
100 300 1000 30
IC max (continuous)
10
1
3
5
0.1
0.3
0.5
0.03
0.05
Common emitter
VCE = 5 V
0
0
Tc = 100°C
4
8
12
16
20
25
0.4 0.8 1.2 1.6 2.0
25
Common emitter
IC/IB = 10
Tc = 100°C
0.01
0.01
0.1 1
0.1
3
1
25
25
0.3
10 100
0.03
Common emitter
Tc = 25°C
0
0
IB = 10 mA
800
4
8
12
16
20
2 4 6 8 10
50
600
400
250
200
150
100
40
20
30
300
Common emitter
VCE = 5 V
1
0.01
25
25
10
30
100
300
0.1 1 10
Tc = 100°C
100
3
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rth – tw
Pulse width tw (s)
Transient thermal resistance
r
th
(°C/W)
Curves should be applied in thermal limited
area. (single nonrepetitive pulse)
10
0.01
0.001
0.01 1 10 100 1000 0.1
0.1
1
Infinite heat sink
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RESTRICTIONS ON PRODUCT USE
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