Industrial & Multimarket
Data Sheet
2.2, 2011-09-20
Final
OptiMOS™
BSC018NE2LSI
n-Channel Power MOSFET
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Final Data Sheet 1 2.2, 2011-09-20
1 Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low ga te and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
• Optimized for high performance buck converter
• 100% avalanche tested
• Very low on-resistance RDS(on) @ VGS=4.5 V
• N-channel
• Qualified according to JEDEC1) for target applications
• Monolithic integrated Schottky like diode
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Applications
• On board powe r fo r ser v e r
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
VDS 25 V IFX OptiMOS webpage
RDS(on),max 1.8 mΩIFX OptiMOS product brief
ID100 A IFX OptiMOS spice models
QOSS 23 nC IFX Design tools
Qg.typ 36
Type Package Marking
BSC018NE2LSI PG-TDSON-8 018NE2LI
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Final Data Sheet 2 2.2, 2011-09-20
2Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current ID--100 AVGS=10 V, TC=25 °C
--97 VGS=10 V, TC=100 °C
--100 VGS=4.5 V, TC=25 °C
--84 VGS=4.5 V, TC=100 °C
--29 VGS=10 V, TA=25 °C,
RthJA=50 K/W1))
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copp er area for drain
connection. PCB is vertical in still air.
Pulsed drain current2)
2) See figure 3 for more detailed information
ID,pulse --400 TC=25 °C
Avalanche current, single pulse3)
3) See figure 13 for more detailed information
IAS --50
Avalanche energy, single pulse EAS --45 mJID=50 A,RGS=25 Ω
Gate source voltage VGS -20 - 20 V
Power dissipation Ptot --69 WTC=25 °C
--2.5 TA=25 °C, RthJA=50 K/W1))
Operating and storage temperature Tj,Tstg -55 - 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Table 3 Thermal characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC --1.8K/W
--20 top
Device on PCB RthJA --50 6 cm
2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (o ne layer, 70 µm thick) copper a rea for drai n
connection. PCB is vertical in still air
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics
Final Data Sheet 3 2.2, 2011-09-20
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0 V, ID=10 mA
Breakdown voltage temperature
coefficient dV(BR)DSS/
dTj
-15-mV/KID= 10 mA, referenced to
25°C
Gate threshold voltage VGS(th) 1.2 - 2 VDS=VGS, ID=250 µA
Zero gate voltage drain current IDSS --0.5mAVDS=20 V, VGS=0 V,
Tj=25 °C
-2- VDS=20 V, VGS=0 V,
Tj=125 °C
Gate-source leakage current IGSS - 10 100 nA VGS=20V, VDS=0 V
Drain-source on-state resistance RDS(on) -1.92.4mΩVGS=4.5 V, ID=30A,
-1.51.8 VGS=10 V, ID=30 A,
Gate resistance RG-0.8-Ω
Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dyn ami c ch a r acte ris tic s
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Input capacitance Ciss -2500-pFVGS=0 V, VDS=12 V,
f=1 MHz
Output capacitance Coss -1100-
Reverse transfer capacitance Crss -110-
Turn-on dela y time td(on) -5.2-nsVDD=12 V, VGS=10V,
ID=30 A, RG=1.6 Ω
Rise time tr-4.8-
Turn-off delay time td(off) -24-
Fall time tf-3.6-
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics
Final Data Sheet 4 2.2, 2011-09-20
Table 6 Gate charge characteristics1)
1) See figure 16 for gate charge parameter definition
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Gate to sour ce charge Qgs -6.3-nCVDD=12 V,
ID=30 A,
VGS=0 to 4.5 V
Gate charge at threshold Qg(th) -4.1-
Gate to drain charge Qgd -4.3-
Switching charge Qsw -6.6-
Gate charge total Qg-17-
Gate plateau voltage Vplateau -2.5-V
Gate charge total Qg-36-nCVDD=12 V,
ID=30 A,
VGS=0 to 10V
Gate charge total, sync. FET Qg(sync) -15- VDS=0.1 V,
VGS=0 to 4.5 V
Output charge Qoss -23- VDD=12 V, VGS=0 V
Table 7 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Diode continuous forward current Is--69ATC=25 °C
Diode pulse current IS,pulse --276
Diode forward voltage VSD -0.55-VVGS=0 V, IF=7 A,
Tj=25 °C
Reverse reco very charge Qrr -5-nCVR=15 V, IF=7 A,
dIF/dt=400 A/µs
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics diagrams
Final Data Sheet 5 2.2, 2011-09-20
5 Electrical characteristics diagrams
Table 8
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics diagrams
Final Data Sheet 6 2.2, 2011-09-20
Table 10
5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics diagrams
Final Data Sheet 7 2.2, 2011-09-20
Table 12
9 Drain-sour ce on-s ta te resistance 10 Typ. gate th re s hold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=10 mA
Table 13
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Electrical characteristics diagrams
Final Data Sheet 8 2.2, 2011-09-20
Table 14
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Typ. drain-source leakage current 16 Gate charge waveforms
IDSS=f(VDS); VGS=0 V
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Package outline
Final Data Sheet 9 2.2, 2011-09-20
6 Package outline
Figure 1 Outlines PG-TDSON-8, dimen sions in mm/inches
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Package outline
Final Data Sheet 10 2.2, 2011-09-20
Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches
OptiMOS™ Power-MOSFET
BSC018NE2LSI
Revision History
Final Data Sheet 11 2.2, 2011-09-20
7 Revision History
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Edition 2011-09-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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Revision History: 2011-09-20, 2.2
Previous Revision:
Revision Subjects (major changes since last revision)
0.9 Release of Target data sheet
2.0 Release of Final data sheet
2.1 Update schematic
2.2 Update VGS(th)
