Dual IGBTMOD™
S-Series Module
800 Amperes/1200 Volts
CM800DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
13/11 Rev. 0
Description:
Powerex Dual IGBTMOD™
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors in a half-bridge
configuration with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM800DY-24S is a
1200V (VCES), 800 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 800 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.51 140.0
B 5.12 130.0
C 1.38+0.04/-0.02 35.0+1.0/-0.5
D 0.45 11.5
E 0.39 10.0
F 4.33±0.001 110.0±0.25
G 0.54 13.8
H 1.42 36.0
J 1.72 43.8
K 0.35 9.0
L 0.59 15.0
M 0.80 20.4
N 0.57 14.5
Dimensions Inches Millimeters
P 1.57 40.0
Q 2.56 65.0
R 0.79 20.0
S 0.32 8.0
T 0.26 Dia. 6.5 Dia.
U M8 Metric M8
V M4 Metric M4
W 0.43 11.1
X 1.02 26.0
Y 0.29 7.3
Z 0.16 4.0
AA 0.96+0.04/-0.02 24.5+1.0/-0.5
G2
E2
E1
G1
Di2
Di1
Tr2
Tr1
C1E2C2E1
A
B
F E
M
N
P
U NUTS
(3 PLACES)
V NUTS
(4 PLACES)
T
(4 PLACES)
F
N
H J
K
D
G
R
Y
W
X X
L
X
Q
E
LABEL
B
C2E1
E2
C1
G2E2E1G1
C
Z
S
AA
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3/11 Rev. 02
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM800DY-24S Units
Maximum Junction Temperature Tj(max) +175 °C
Operating Junction Temperature Tj(op) -40 ~ +150 °C
Storage Temperature Tstg -40 ~ +125 °C
Case Temperature*2 TC -40 ~ +125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (DC, Tc = 117°C)*2,*8 IC 790 Amperes
Peak Collector Current (Pulse, Repetitive)*3 ICRM 1600 Amperes
Total Power Dissipation (Tc = 25°C)*2,*4 Ptot 5355 Watts
Emitter Current (FWDi Current, Tc = 25°C)*2,*4,*8 IE*1 790 Amperes
Peak Emitter Current (FWDi Current, Pulse, Repetitive)*3 IERM*1 1600 Amperes
Mounting Torque, M8 Main Terminals – 95 in-lb
Mounting Torque, M4 Auxiliary Terminals – 15 in-lb
Mounting Torque, M6 Mounting to Heatsink – 40 in-lb
Creepage Distance (Terminal to Terminal) ds – mm
Creepage Distance (Terminal to Baseplate) ds – mm
Clearance (Terminal to Terminal) da – mm
Clearance (Terminal to Baseplate) da – mm
Weight – 1200 Grams
Flatness of Baseplate (On the Centerline X, Y)*7 ec -100 ~ +100 µm
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) Viso 2500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
*7 Baseplate flatness measurement point is as in the following figure.
*8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation.
X
BOTTOM
– CONCAVE
+ CONVEX
– CONCAVE
+ CONVEX
BOTTOM
BOTTOM
LABEL SIDE
Y
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3/11 Rev. 0 3
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 80mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C*5 – 1.95 2.40 Volts
(Terminal) IC = 800A, VGE = 15V, Tj = 125°C*5 – 2.25 – Volts
IC = 800A, VGE = 15V, Tj = 150°C*5 – 2.35 – Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C – 1.70 2.15 Volts
(Chip) IC = 800A, VGE = 15V, Tj = 125°C – 1.90 – Volts
IC = 800A, VGE = 15V, Tj = 150°C – 1.95 – Volts
Gate Charge QG VCC = 600V, IC = 800A, VGE = 15V – 1868 – nC
Emitter-Collector Voltage VEC*1 IE = 800A, VGE = 0V, Tj = 25°C*5 – 1.85 2.30 Volts
(Terminal) IE = 800A, VGE = 0V, Tj = 125°C*5 – 1.85 – Volts
IE = 800A, VGE = 0V, Tj = 150°C*5 – 1.85 – Volts
Emitter-Collector Voltage VEC*1 IE = 800A, VGE = 0V, Tj = 25°C – 1.70 2.15 Volts
(Chip) IE = 800A, VGE = 0V, Tj = 125°C – 1.70 – Volts
IE = 800A, VGE = 0V, Tj = 150°C – 1.70 – Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 80.0 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 16.0 nF
Reverse Transfer Capacitance Cres – – 1.32 nF
Turn-on Delay Time td(on) VCC = 600V, IC = 800A, – – 800 ns
Rise Time tr VGE = 15V, – – 200 ns
Turn-off Delay Time td(off) RG = 0W, – – 600 ns
Fall Time tf Inductive Load – – 300 ns
Reverse Recovery Time trr*1 VCC = 600V, IE = 800A, VGE = ±15V, – – 300 ns
Reverse Recovery Charge Qrr*1 RG = 0W, Inductive Load – 42.8 – µC
Turn-on switching Energy (Per Pulse) Eon VCC = 600V, IC = IE = 800A, – 107 – mJ
Turn-off Switching Energy (Per Pulse) Eoff VGE = ±15V, RG = 0W, – 82 – mJ
Reverse Recovery Energy (Per Pulse) Err*1 Tj = 150°C, Inductive Load – 71 – mJ
Internal Lead resistance RCC' + EE' Main Terminals-Chip, – – 0.4 mW
Per Switch, TC = 25°C*2
Internal Gate Resistance rg Per Switch – 2.45 – W
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3/11 Rev. 04
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT – – 0.028 °C/W
Thermal Resistance, Junction to Case*2 Rth(j-c)R Per FWDi – – 0.045 °C/W
Contact Thermal Resistance*2 Rth(c-s) Case to Heatsink,Per 1/2 Module, – 0.015 – °C/W
Thermal Grease Applied*6
Recommended Operating Conditions, Ta = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
DC Supply Voltage VCC Applied Across C1-E2 – 600 850 Volts
Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts
External Gate Resistance RG Per Switch 0 – 5.1 W
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3/11 Rev. 0 5
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
1600
400
0
800
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.5
3.0
2.5
2.0
1.5
0.5
1.0
0
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
8
6
4
2
0
101
102
103
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
EMITTER CURRENT, IE, (AMPERES)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
103
102
101
100
10-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 2 4 6 8 10
VGE = 20V
13.5
15
12
11
Tj = 25°C
10
9
COLLECTOR-CURRENT, IC, (AMPERES)
0 400 800 1200 1600
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0 4 8 12 16 20
Tj = 25°C
IC = 320A
IC = 1600A
IC = 800A
0 0.5 1.0 1.5 2.0 3.02.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10-1 100102
VGE = 0V
f = 1MHz
101
Coes
Cres
Cies
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
101
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
tf
103
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
101
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
103
10-1 101
100
102
101
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 125°C
Inductive Load
tf
102
GATE RESISTANCE, RG, (Ω)
104
100101
103
102
101
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 150°C
Inductive Load
tf
102
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3/11 Rev. 06
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT Part)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.028°C/W
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi Part)
100
10-1
10-2
10-3
10-5 10-3
10-4 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
100
10-1
10-2
10-3
10-5 10-3
10-4 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.045°C/W
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 500 15001000
15
10
5
0300025002000
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
102
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
IC = 800A
VCC = 600V
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
103
101102
102
101
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 125°C
Inductive Load
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
103
10-1 100101
102
101
102
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
103
101102
102
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
trr
Irr
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
102
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
trr
Irr
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 150°C
Inductive Load
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
103
10-1 100101
102
101
102
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
Eon
Eoff
Err