2N709 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)6.0 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)300m' Minimum Operating Temp (oC) Maximum Operating Temp (oC)200o I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)5.0 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)500m f(T) Min. (Hz) Transition Freq600M @I(C) (A) (Test Condition)5.0m @V(CE) (V) (Test Condition)4.0 Power Gain Min. (dB) @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) Noise Figure Min. (dB) @I(C) (A) (Test Condition)