Voltage: 75 Volts
Current: 200mA
BAS16
Features
Fast Switching Speed
For General Purpose Switching
Applications
High Conductance
Mechanical data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
method 208
Approx. Weight: 0.008 gram
Surface Mount Package Ideally Suited for
Automatic Insertion
Surface Mount Switching Diode
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COMCHIP
COMCHIP
SOT-23
Dimensions in inches (millimeters)
.037(0.95).037(0.95)
.006(0.15)max.
.1
19
(3.
0
)
.020 (0.5).020 (0.5)
Top View
.103(2.6)
.006(0.15)
.044(1.10)
.110 (2.8)
.047 (1.20
)
.002(0.05)
.086 (2.2)
.035(0.90)
.020 (0.5)
.056 (1.40)
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
1
ANODE
3
CATHODE
12
3
MDS0212004A Page 1
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COMCHIP
COMCHIP
MDS0212004A Page 2
Surface Mount Switching Diode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse V oltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR—
—
—
1.0
50
30
µAdc
Reverse Breakdown Voltage
(IBR = 100 µAdc) V(BR) 75 — Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF—
—
—
—
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD— 2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) VFR — 1.75 Vdc
Reverse Recovery T ime
(IF = IR = 10 mAdc, RL = 50 Ω)trr — 6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)QS— 45 pC
1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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COMCHIP
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Surface Mount Switching Diode
MDS0212004A Page 3
Rating and Characteristic Curves (BAS16)
100
0.2 0.4 VF, Forward Voltage (V)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85
°
C
10
0VR, Reverse Voltage (V)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0VR, Reverse Voltage (V)
0.64
0.60
0.56
0.52
CD, Diode Capacitance (pF)
2468
IF, Forward Current (mA) (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = –40
°
C
TA = 25
°
C
TA = 150
°
C
TA = 125
°
C
TA = 85
°
C
TA = 55
°
C
TA = 25
°
C
IR, Reverse Current (
µ
A)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
Ω
0.1
µ
F
DUT
VR
100
µ
H0.1
µ
F
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
trtpt
10%
90%
IF
IR
trr t
IR(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
