© 2012 IXYS CORPORATION, All Rights Reserved
IXYR100N120C3 VCES = 1200V
IC110 = 58A
VCE(sat) ≤ ≤
≤ ≤
≤
3.5V
tfi(typ) = 110ns
DS100406B(03/13)
High-Speed IGBT
for 20-50 kHz Switching
Features
zOptimized for Low Switching Losses
zSquare RBSOA
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z2500V~ Electrical Isolation
zPositive Thermal Coefficient of
Vce(sat)
zAvalanche Rated
zHigh Current Handling Capability
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 150°C 1.25 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 2.9 3.5 V
TJ = 150°C 4.1 V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 1200 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 104 A
IC110 TC = 110°C 58 A
ICM TC = 25°C, 1ms 480 A
IATC = 25°C 50 A
EAS TC = 25°C 1.2 J
SSOA VGE = 15V, TVJ = 150°C, RG = 1Ω ICM = 200 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
PCTC = 25°C 484 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V~
FCMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
1200V XPTTM IGBT
GenX3TM
ISOPLUS247TM
GCE
G = Gate C = Collector
E = Emitter
Isolated Tab
(Electrically Isolated Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYR100N120C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 52 S
Cies 6000 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 353 pF
Cres 130 pF
Qg(on) 270 nC
Qge IC = 100A, VGE = 15V, VCE = 0.5 • VCES 50 nC
Qgc 93 nC
td(on) 32 ns
tri 90 ns
Eon 6.50 mJ
td(off) 123 ns
tfi 110 ns
Eoff 2.90 5.00 mJ
td(on) 32 ns
tri 90 ns
Eon 10.10 mJ
td(off) 140 ns
tfi 125 ns
Eoff 3.55 mJ
RthJC 0.31 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1Ω
Note 2
ISOPLUS247 (IXYR) Outline
1 - Gate
2,4 - Collector
3 - Emiiter
© 2012 IXYS CORPORATION, All Rights Reserved
IXYR100N120C3
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
11V
10V
7V
9V
6V
8V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V 10V
8V
11V
9V
7V
6V
Fi g . 3. Ou tp ut C har acteri sti cs @ T
J
= 125º C
0
20
40
60
80
100
120
140
160
180
200
012345678
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
9V
VGE
= 15V
13V
12V
11V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 100A
I C = 50A
I C = 200A
Fi g . 5. C o l l ector -to -E mi tter Vol tag e vs.
Gate-to -Emi tter V o l tag e
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
6789101112131415
V
GE
- Volts
V
CE
- Volts
I C
= 200
A
TJ = 25ºC
100
A
50
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.54.55.56.57.58.59.5
V
GE
- Volts
I
C
- Amperes
TJ = - 40ºC
25ºC
125ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYR100N120C3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B ias Safe Op er ati n g Area
0
20
40
60
80
100
120
140
160
180
200
220
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Maxim um T ransient Thermal Impedance
aaaaaa
0.4
Fig . 8. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 100A
I
G
= 10mA
Fig . 9. C ap aci tan ce
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2012 IXYS CORPORATION, All Rights Reserved
IXYR100N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
12345678910
R
G
- Ohms
Eoff - MilliJoules
0
2
4
6
8
10
12
14
16
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
12345678910
R
G
- Ohms
t f i - Nanoseconds
0
100
200
300
400
500
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig . 13. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction T emperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
2
4
6
8
10
12
14
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive T urn-off Switching T imes vs.
Collector Current
50
70
90
110
130
150
170
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t f i - Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50
70
90
110
130
150
170
25 50 75 100 125
T
J
- Degrees Centigrade
t f i - Nanoseconds
100
120
140
160
180
200
220
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 50A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYR100N120C3
IXYS REF: IXY_100N120C3(9T)10-26-11
Fig . 1 9. I nd ucti v e Tu r n-on Sw i tchi ng Ti mes vs.
Co l l ect o r Cur r en t
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
27
28
29
30
31
32
33
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω , V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 20. I n d u ctive Tur n - o n Switch i n g Times vs.
Jun ct ion Temp er atu r e
0
20
40
60
80
100
120
140
160
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
27
28
29
30
31
32
33
34
35
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω , V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive T urn-on Switching Times vs.
Gate Resi st an ce
0
40
80
120
160
200
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
20
30
40
50
60
70
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
