FDS4465_F085
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –13.5 A, –20 V. R
DS(ON)
= 8.5 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 10.5 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 14 mΩ @ V
GS
= –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High current and power handling capability
S
D
S
S
SO-8
D
D
D
G
D
DDD
SSSG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage ±8 V
I
D
Drain Current – Continuous
(Note 1a)
–13.5 A
– Pulsed –50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125 °C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4465 FDS4465_F085 13’’ 12mm 2500 units
• Qualified to AEC Q101
• RoHS Compliant
FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDS4465_F085 Rev. C1
www.fairchildsemi.com1
June 2012
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250 µA –20 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= –250 µA, Referenced to 25°C –12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1 µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –8 V, V
DS
= 0 V –100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= –250 µA –0.4 –0.6 –1.5 V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –13.5 A
V
GS
= –2.5 V, I
D
= –12 A
V
GS
= –1.8 V, I
D
= –10.5 A
V
GS
=–4.5 V, I
D
=–13.5A, T
J
=125°C
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –50 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –13.5 A 70 S
Dynamic Characteristics
C
iss
Input Capacitance 8237 pF
C
oss
Output Capacitance 1497 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
750 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 20 36 ns
t
r
Turn–On Rise Time 24 38 ns
t
d(off)
Turn–Off Delay Time 300 480 ns
t
f
Turn–Off Fall Time
V
DD
= –10V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
140 224 ns
Q
g
Total Gate Charge 86 120 nC
Q
gs
Gate–Source Charge 20 nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V, I
D
= –13.5 A,
V
GS
= –4.5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
V
SD
Drain–Source Diode Forward
Voltage V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
–0.6 –1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4465_F085 Rev. C1 www.fairchildsemi.com2
FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
0
10
20
30
40
50
00.511.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
-2.5V
-2.0V
-1.8V -1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0 1020304050
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -1.5V
-4.5V
-2.0V
-2.5V
-1.8V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -13.5A
V
GS
= -10V
0
0.005
0.01
0.015
0.02
0.025
012345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -6.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
00.511.52
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5.0V
0.0001
0.001
0.01
0.1
1
10
100
00.20.40.60.811.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET
FDS4465_F085 Rev. C1 www.fairchildsemi.com3
Typical Characteristics
0
1
2
3
4
5
0 20406080100
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -13.5A V
DS
= -5V
-10V
-15V
0
2000
4000
6000
8000
10000
0 5 10 15 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 125
o
C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET
FDS4465_F085 Rev. C1 www.fairchildsemi.com4
TRADEMARKS
The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global subsidiar ies, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) support or su stain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2Cool™
AccuPower™
AX-CAP™*
BitSiC®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Pr oduction Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of se miconductor parts is a growing problem in the indust ry. All manufactures of semiconductor products are exper iencing counterfeiting of their
parts. Customer s who inadverte ntly purchase counterfei t parts expe rience many problems such as loss of brand repu tatio n, substandar d pe rfo rmance, f ail ed
application, and increased co st of pro ducti on and manu facturin g delays. Fairchil d is taki ng st rong measures to pro tect ourselves and our custo mers from the
proliferation of cou nterfeit par ts. Fairchild strongl y encourages cust omers to purchase Fairchil d parts eith er directly from Fairchild o r from Authorized Fairchi ld
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Rev. I61
tm
®
FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET
FDS4465_F085 Rev. C1 www.fairchildsemi.com5
