1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] Measured from pin 1 to 2
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 02 — 20 August 2009 Product data sheet
nUnidirectional ESD protection of one line nESD protection > 23 kV
nUltra low diode capacitance: Cd = 0.6 pF nIEC 61000-4-2; level 4 (ESD)
nMax. peak pulse power: PPP up to 200 W nIEC 61000-4-5; (surge)
nLow clamping voltage
n10/100/1000 Ethernet nLocal Area Network (LAN) equipment
nFireWire nComputers and peripherals
nCommunication systems nHigh-speed data lines
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V
Cddiode capacitance f = 1 MHz; VR=0V [1] - 0.6 1.5 pF
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 2 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode ESD protection diode
2 cathode compensation diode
3 common anode
12
3
006aaa441
3
12
Table 3. Ordering information
Type number Package
Name Description Version
PESD3V3U1UT - plastic surface mounted package; 3 leads SOT23
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Table 4. Marking codes
Type number Marking code[1]
PESD3V3U1UT *AP
PESD5V0U1UT *AQ
PESD12VU1UT *AR
PESD15VU1UT *AS
PESD24VU1UT *AT
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 3 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPP peak pulse power 8/20 µs[1]
PESD3V3U1UT - 80 W
PESD5V0U1UT - 80 W
PESD12VU1UT - 200 W
PESD15VU1UT - 200 W
PESD24VU1UT - 200 W
IPP peak pulse current 8/20 µs[1]
PESD3V3U1UT - 5 A
PESD5V0U1UT - 5 A
PESD12VU1UT - 5 A
PESD15VU1UT - 5 A
PESD24VU1UT - 3 A
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 4 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1][2]
PESD3V3U1UT - 30 kV
PESD5V0U1UT - 30 kV
PESD12VU1UT - 30 kV
PESD15VU1UT - 30 kV
PESD24VU1UT - 23 kV
PESDxU1UT HBM MIL-STD-883 - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3 > 4 kV
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 5 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V
IRM reverse leakage current
PESD3V3U1UT VRWM = 3.3 V - 0.25 2 µA
PESD5V0U1UT VRWM = 5.0 V - 0.03 1 µA
PESD12VU1UT VRWM = 12 V - < 1 50 nA
PESD15VU1UT VRWM = 15 V - < 1 50 nA
PESD24VU1UT VRWM = 24 V - < 1 50 nA
VBR breakdown voltage IR = 5 mA [2]
PESD3V3U1UT 5.8 6.4 6.9 V
PESD5V0U1UT 7.0 7.6 8.2 V
PESD12VU1UT 14.2 15.0 16.7 V
PESD15VU1UT 17.1 18.9 20.3 V
PESD24VU1UT 25.4 27.8 30.3 V
Cddiode capacitance f = 1 MHz; VR = 0 V [2] - 0.6 1.5 pF
VCL clamping voltage [1][2]
PESD3V3U1UT IPP = 1 A - - 9 V
IPP = 5 A - - 20 V
PESD5V0U1UT IPP = 1 A - - 12 V
IPP = 5 A - - 21 V
PESD12VU1UT IPP = 1 A - - 23 V
IPP = 5 A - - 39 V
PESD15VU1UT IPP = 1 A - - 28 V
IPP = 5 A - - 53 V
PESD24VU1UT IPP = 1 A - - 40 V
IPP = 3 A - - 76 V
rdif differential resistance IR = 1 mA
PESD3V3U1UT - - 400 Ω
PESD5V0U1UT - - 80 Ω
PESD12VU1UT - - 200 Ω
PESD15VU1UT - - 225 Ω
PESD24VU1UT - - 300 Ω
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 6 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
PESD3V3U1UT; PESD5V0U1UT
IR is less than 10 nA at 150 °C for:
PESD12VU1UT; PESD15VU1UT; PESD24VU1UT
Fig 3. V-I characteristics Fig 4. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
006aaa407
−VCL −VBR −VRWM −IRM
−IR
−IPP
V
I
P-N
−+
006aaa442
Tj (°C)
−100 150100050−50
1
10
10−1
IR
IR(25˚C)
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 7 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
7. Application information
The PESDxU1UT series is designed for protection of high-speed datalines from damage
caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection
diode and an ultra low capacitance compensation diode to ensure an effective device
capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to
200 W per line for an 8/20 µs waveform.
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a common-mode
application.
The two PESDxU1UT devices should be connected as follows:
protected data line is connected to
device 1 / pin 2
device 2 / pin 1
Ground is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 5. Bidirectional ESD protection of one line, common mode
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
differential-mode configuration as e.g. for Ethernet applications.
The two PESDxU1UT should be connected as follows:
I/O line 1 is connected to
device 1 / pin 2
device 2 / pin 1
I/O line 2 is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 6. Differential mode Ethernet protection
006aaa443
3n.c.n.c. 31
protected data line
ground
PESDxU1UTPESDxU1UT
21
2
ETHERNET
TRANSCEIVER
006aaa444
3n.c.n.c.
I/O 1
I/O 2
31
PESDxU1UTPESDxU1UT
21
2
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 8 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxU1UT as close to the input terminal or connector as possible.
2. The path length between the PESDxU1UT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 9 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
8. Test information
Fig 7. ESD clamping test setup and waveforms
006aaa445
50 Ω
RZ
CZ
D.U.T.
(Device
Under
Test)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
GND
GND
GND
GND PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 10 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 8. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
Table 9. Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD3V3U1UT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 11 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXU1UT_SER_2 20090820 Product data sheet - PESDXU1UT_SER_1
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PESDXU1UT_SER_1 20050511 Product data sheet - -
PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 12 of 13
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PESDXU1UT_SER_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
