1 - 4© 2006 IXYS All rights reserved
0644
IXER 35N120D1
Features
• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS 247TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
• single switches
• choppers with complementary free
wheeling diodes
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
IGBT
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 50 A
IC90 TC = 90°C 32 A
ICM VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 200 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V
TVJ = 125°C 2.6 V
VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 0.4 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 85 ns
tr50 ns
td(off) 440 ns
tf50 ns
Eon 5.4 mJ
Eoff 2.6 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF
QGon VCE = 600 V; VGE = 15 V; IC = 35 A 150 nC
RthJC 0.6 K/W
RthCH with heatsink compound 0.3 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 39 Ω
IC25 =50A
VCES =1200V
VCE(sat) typ. = 2.2V
NPT3 IGBT
with Diode
in ISOPLUS247TM
G
C
E
GC
E
G = Gate C = Collector E = Emitter
Isolated Backside
ISOPLUS 247TM
E153432
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2 - 4© 2006 IXYS All rights reserved
0644
IXER 35N120D1
Component
Symbol Conditions Maximum Ratings
TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
Cpcoupling capacity between shorted 30 pF
pins and mounting tab in the case
Weight 6g
Diode
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 48 A
IF90 TC = 90°C 25 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 35 A; TVJ = 25°C 2.5 2.9 V
TVJ = 125°C 1.9 V
IRM 51 A
trr 80 ns
Erec(off) 1.8 mJ
RthJC 1.2 K/W
RthCH with heatsink compound 0.6 K/W
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 0.95 V; R
0
= 45 m
Ω
Diode (typ. at TJ = 125°C)
V
0
= 1.26V; R
0
= 15 m
Ω
Thermal Response
IGBT
C
th1
= 0.067 J/K; R
th1
= 0.108 K/W
C
th2
= 0.175 J/K; R
th2
= 0.491 K/W
Diode
C
th1
= 0.039 J/K; R
th1
= 0.311 K/W
C
th2
= 0.090 J/K; R
th2
= 0.889 K/W
ISOPLUS247TM OUTLINE
The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
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0644
IXER 35N120D1
01234567
0
20
40
60
80
100
120
0 40 80 120 160 200
0
5
10
15
20
01234567
0
20
40
60
80
100
120
VCE
V
IC
VCE
A
IC
V
nC
QG
V
VGE
9 V
11 V
9 V
11 V
A
4 6 8 10121416
0
20
40
60
80
100
120
V
VGE
A
IC
01234
0
15
30
45
60
75
90
V
VF
IF
A
0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
ZthJC IGBT
MUBW3512E7
13 V
15 V
TVJ = 25°C
VGE = 17 V
15 V
13 V
TVJ = 125°C
VGE = 17 V
TVJ = 25°C
TVJ = 125°C
VCE = 20 V
TVJ = 125°C TVJ = 25°C
VCE = 600 V
IC = 35 A
diode
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance
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0644
IXER 35N120D1
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Typ. turn off characteristics Fig. 12 Typ. turn off characteristics
of free wheeling diode of free wheeling diode
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
0 20406080
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
90
100
0 20406080
0
2
4
6
0
200
400
600
800
1000
1200
10 20 30 40 50 60 70 80
0
1
2
3
4
0
200
400
600
800
10 20 30 40 50 60 70 80
0
2
4
6
8
0
40
80
120
160
Eoff
td(off)
tf
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
mJ
Eon
mJ
Eoff
ns
t
ns
t
mJ ns
mJ
EREC(off)
VCE = 600 V
VGE = ±15 V
IC = 35 A
TVJ = 125°C
ns
Eon
tr
td(on)
Eon
tr
td(on)
VCE = 600 V
VGE = ±15 V
RG = 39 Ω
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 35 A
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
RG = 39 Ω
TVJ = 125°C
Erec(off)
0
10
20
30
40
50
60
70
0 200 400 600 800 1000 1200 1400 1600 1800
-diF/dt [A/µs]
IRM [A]
0
50
100
150
200
250
300
350
trr [ns]
RG=
IRM
tRR
39Ω
56Ω
56Ω
75Ω
75Ω
VCE=600V
VGE=+-15V
Tj=125°C
IF=35A 39Ω
24Ω
24Ω
15Ω
15Ω
0
2
4
6
8
10
12
0 200 400 600 800 1000 1200 1400 1600 1800
-di
F
/dt [A/µs]
Q
rr
[µC]
I
F
=
R
G
=
75Ω
56Ω 39Ω
24Ω
15Ω
7,5A
70A
50A
35A
15A
TVJ = 125°C
IF= 30 A
VR= 600 V
TVJ = 125°C
VR= 600 V
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