2SA1987
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
• High breakdown voltage: VCEO = −230 V (min)
• Complementary to 2SC5359
• Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −230 V
Collector-emitter voltage VCEO −230 V
Emitter-base voltage VEBO −5 V
Collector current IC −15 A
Base current IB −1.5 A
Collector power dissipation
(Tc = 25°C)
PC 180 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
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2SA1987
2006-11-09
2
Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −230 V, IE = 0 ― ― −5.0 μA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −5.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −230 ― ― V
hFE (1)
(Note)
VCE = −5 V, IC = −1 A 55 ― 160
DC current gain
hFE (2) V
CE = −5 V, IC = −7 A 35 70 ―
Collector-emitter saturation voltage VCE (sat) IC = −8 A, IB = −0.8 A ― −1.5 −3.0 V
Base-emitter voltage VBE V
CE = −5 V, IC = −7 A ― −1.0 −1.5 V
Transition frequency fT V
CE = −5 V, IC = −1 A ― 30 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 360 ― pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SA1987
TOSHIBA
JAPAN
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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2SA1987
2006-11-09
3
IC – VCE
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC – VBE
Collector current IC (A)
Base-emitter voltage VBE (V)
hFE – IC
DC current gain hFE
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Safe Operating Area
Common emitter
Tc = 25°C
0
0
IB = −10 mA
−800
−4
−8
−12
−16
−20
−2 −4 −6 −8 −10
−50
−600
−400
−250 −200
−150
−100
−40
−20
−30
Common emitter
VCE = −5 V
0
0
Tc = 100°C
−4
−8
−12
−16
−20
−25
−0.4 −0.8 −1.2 −1.6 −2.0
25
Common emitter
VCE = −5 V
1
−0.01
−25
25
10
30
100
300
−0.1 −1 −10
Tc = 100°C
−100
3
Common emitter
IC/IB = 10
Tc = 100°C
−0.01
−0.01
−0.1 −1
−0.1
−3
−1
−25
25
−0.3
−10 −100
−0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(
pulsed
)
*
DC operation
Tc = 25°C
−1
−3
−10
−30
100 ms*
10 ms*
1 ms*
VCEO max
−0.3
−100 −300 −1000
−1
−0.03
−0.1
−30
IC max (continuous)
−10
−100
−0.01
−3
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2SA1987
2006-11-09
4
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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