Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 July 2006
AH102A
Medium Power, High Linearity Amplifier Product Information
The Communications Ed
g
e TM
Product Features
• 350 – 3000 MHz
• +46 dBm Output IP3
• 14.5 dB Gain
• +27 dBm P1dB
• MTTF > 1000 Years
• Internally Matched
• Single +9 V Supply
• Lead-free/Green/RoHS-compliant
SOT-89 Package
Applications
• Mobile Infrastru cture
• W-LAN / ISM / WLL / RFID
• Broadband Wi rel ess
• PowerAmp Predistortion Circuitry
Product Description
The AH102A is a medium power gain block that offers
excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage and
an internally matc hed devi ce makes it ideal for both narrow
and broadband applications.
Superior thermal design allows the product to achieve +46
dBm IP3 performance at a mounting temperature of +85 °C
with an associated MTTF of greater than 1000 years. The
AH102A is available in the environmentally-friendly lead-
free/green/RoHS-compliant SOT-89 package.
The broadband amplifier uses a high reliability GaAs
MESFET technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH102A will work for other applications within the 250 to
3000 MHz frequency range such as broadband wireless.
Functional Diagram
RF IN GND RF OUT
GND
1 23
4
Function Pin No.
Input 1
Ground 2
Output / Bias 3
Ground 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 350 3000
Test Frequency MHz 800
Gain dB 12.5 14.4
Output IP3 (2) dBm +43 +46
Output P1dB dBm +27
Noise Figure dB 3.1
Test Frequency MHz 1900
Gain dB 13
Output IP3 (2) dBm +42 +44.5
Output P1dB dBm +27
Operating Current Range mA 170 200 230
Supply Voltage V +9
1. Test conditions unless otherwise noted: T = 25 ºC, Vdd = +9 V in a 50 ohm test fixture.
2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +150 °C
DC Voltage +11 V
RF Input Power (continuous) +17 dBm
Junction Temperature 220 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (3)
Parameter Units Typical
Frequency MHz 900 1900 2140
Gain dB 14.5 13.6 13.5
Input Return Loss dB 22 16 19
Output Return Loss dB 30 15 15
Output P1dB dBm +27 +27 +27
Output IP3 (2) dBm +46 +45 +44
IS-95A Channel Power
@ -45 dBc ACPR dBm +21 +20
W-CDMA Channel Power
@ -45 dBc ACLR dBm +18.2
Noise Figure dB 3.1 3.8 3.7
Supply Current mA 200
Supply Voltage V +9
3. Parameters reflect performance in a tuned application circuit.
Ordering Information
Part No. Description
AH102A-G Medium Power, High Linearity Amplifier
(lead-free/green/RoHS-compliant SOT-89 package)
AH102A-PCB900 900 MHz Fully A ssembled Ev aluation B oard
AH102A-PCB2000 1.7-2.2 GHz Fully Ass embled Evalu ation Bo ard
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 5 July 2006
AH102A
Medium Power, High Linearity Amplifier Product Information
The Communications Ed
g
e TM
Typical Device Data
VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system
S-Parameters
Vd = +9V, Temp = 25°C
-30
-20
-10
0
10
20
0 500 1000 1500 2000 2500 3000
Frequency (M Hz)
S11 S2
2
S21
O utput IP3 vs. Frequency
8 dBm / tone, 10 M Hz spacing, Tem p = 25° C
30
34
38
42
46
50
500 1000 1500 2000 2500 3000
Frequency (M Hz)
+7 V +8 V +9 V
P1dB vs. Frequency
18
20
22
24
26
28
500 1000 1500 2000 2500 3000
Frequency (M Hz)
+7 V +8 V +9 V
S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -10.52 -67.44 16.70 161.42 -19.60 15.17 -13.87 -71.59
100 -14.38 -71.97 15.99 164.33 -19.33 4.56 -20.59 -73.74
200 -15.96 -79.59 15.67 161.23 -19.25 -3.24 -31.69 -37.96
400 -14.26 -97.77 15.34 149.69 -19.46 -13.66 -24.05 41.02
600 -12.32 -113.84 15.05 136.98 -19.68 -22.39 -19.28 34.21
800 -10.79 -127.15 14.64 125.04 -20.00 -29.57 -16.57 23.81
1000 -9.66 -138.79 14.33 113.77 -20.41 -37.29 -14.96 12.82
1200 -8.75 -149.08 13.99 102.45 -20.76 -43.79 -13.80 1.56
1400 -8.08 -157.98 13.67 91.00 -21.26 -50.64 -12.94 -9.52
1600 -7.37 -165.53 13.45 80.21 -21.75 -56.57 -12.17 -21.95
1800 -6.87 -171.92 13.24 69.79 -22.32 -63.25 -11.48 -34.63
2000 -6.37 -178.50 13.02 58.73 -22.88 -69.25 -11.05 -47.68
2200 -6.00 174.94 12.78 47.41 -23.60 -76.47 -10.74 -61.29
2400 -5.61 169.08 12.59 36.08 -24.44 -82.56 -10.46 -74.90
2600 -5.12 162.18 12.42 23.91 -25.41 -88.72 -10.05 -88.98
2800 -4.66 156.21 12.14 11.75 -26.51 -93.74 -9.83 -103.94
3000 -4.43 152.94 11.96 5.65 -27.12 -96.59 -9.68 -110.63
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek (εr=4.2), four layer, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 5 July 2006
AH102A
Medium Power, High Linearity Amplifier Product Information
The Communications Ed
g
e TM
Application Circuit: 900 MHz (AH102A-PCB900)
Typical RF Performance at 25°C
C=
ID=1 00 pF
C1
C=
ID=3. 3 pF
C2
C=
ID=100 pF
C3
C=
ID=1e4 pF
C4
C=
ID=100 pF
C6
L=
ID=6.8 nH
L1
L=
ID=22 nH
L2
R=
ID=0 Oh m
R1
NET="AH102A"
0805
+9 V
Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
700 800 900 1000
Frequency (MHz)
S11
(
dB
)
-40 °C +25 °C +85 °C
S21 vs. Frequency
11
12
13
14
15
16
700 800 900 1000
Frequency (MHz)
S21
(
dB
)
-40 °C +25 °C +85 °C
S22 vs. Frequency
-30
-25
-20
-15
-10
-5
0
700 800 900 1000
Frequency (MHz)
S22
(
dB
)
-40 °C +25 °C +85 °C
O IP3 vs. Tem perature
900 MH z, 8 dBm / tone
20
25
30
35
40
45
50
-40-200 20406080
Temperature (°C)
+7 V +8 V +9 V
OIP3 vs. Output Power
frequency = 900 M Hz, Tem p = 25°C
30
35
40
45
50
0481216
Output Power (dBm)
+7 V +8 V +9 V
ACPR vs. Channel Power
900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW
-80
-70
-60
-50
-40
14 16 18 20 22
Channel Powe r (dBm)
ACPR
(
dBc
)
+25 °C
-40 °C
+85 °C
Noise Figure vs. Frequency
Temp = 25 °C
0
1
2
3
4
5
700 800 900 1000
Frequency (MHz)
Noise Fi
g
ure
(
dB
)
Frequency 900 MHz
Gain 14.5 dBm
Input Return Loss 22 dB
Output Return Loss 30 dB
Output P1dB +27 dBm
Output IP3 +46 dBm
IS-95A Ch. Power
@ -45 dBc ACPR +21 dBm
Noise Figure 3.1 dB
Supply Voltage +9 V
Supply Current 200 mA
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 5 July 2006
AH102A
Medium Power, High Linearity Amplifier Product Information
The Communications Ed
g
e TM
Application Circuit: 1900 / 2140 MHz (AH102A-PCB2000)
Typical RF Performance at 25°C
C=
ID=56 pF
C1
C=
ID=1. 5 pF
C2
C=
ID=56 pF
C3
C=
ID=1e4 pF
C4
C=
ID=56 pF
C6
L=
ID=1. 8 nH
L1
L=
ID=15 nH
L2
R=
ID=0 Ohm
R1
NET="AH102A"
0805
+9 V
Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1 2.2
Frequency (MHz)
S11
(
dB
)
+25 °C
-40 °C
+85 °C
S21 vs. Frequency
10
11
12
13
14
15
1.7 1.8 1.9 2 2.1 2.2
Frequency (MHz)
S21
(
dB
)
+25 °C
-40 °C
+85 °C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1 2.2
Frequency (MHz)
S22
(
dB
)
+25 °C
-40 °C
+85 °C
OIP 3 v s . Ou t p u t Po we r
frequency = 1900 MH z
30
35
40
45
50
6 7 8 9 10 11 12
Output Power (dBm)
-40C +25C +85C
OIP3 vs. Output Power
frequency = 2140 MH z
30
35
40
45
50
67891011
Output Power (dBm)
-40C +25C +85C
P1dB vs. Frequency
23
24
25
26
27
28
1.7 1.8 1.9 2 2.1 2.2
Frequency (GHz)
P1dB
(
dBm
)
+25 °C
-40 °C
+85 °C
ACPR vs. Channel Power
1900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW
-70
-60
-50
-40
14 16 18 20 22
Channel Powe r (dBm)
ACPR
(
dBc
)
+25 °C
-40 °C
+85 °C
ACLR vs. Channel Power
2140 MHz, 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset
-60
-55
-50
-45
-40
14 15 16 17 18 19
Channel Powe r (dBm)
ACLR
(
dBc
)
+25 °C
-40 °C
+85 °C
Noise Figure vs. Frequency
0
1
2
3
4
5
1.7 1.8 1.9 2.0 2.1 2.2
Frequency (GHz)
Noise Fi
g
ure
(
dB
)
+25 °C
-40 °C
+85 °C
Frequency 1900 2140 Units
Gain 13.6 13.5 dB
Input Return Loss 16 19 dB
Output Return Loss 15 15 dB
Output P1dB +27 +27 dBm
Output IP3 +45 +44 dBm
IS-95A Ch. Power
@ -45 dBc ACPR +20 dBm
W-CDMA Ch. Power
@ -45 dBc ACLR +18.2 dBm
Noise Figure 3.8 3.7 dB
Supply Voltage +9 V
Supply Current 200 mA
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 5 July 2006
AH102A
Medium Power, High Linearity Amplifier Product Information
The Communications Ed
g
e TM
AH102A-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85 °C
Thermal Resistance, Rth (1) 25 °C / W
Junction Temperature, Tjc (2) 130 °C
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+9V, 200 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160 °C.
Product Marking
The AH102A-G will be marked with a
“102AG” designator and an alphanumeric lot
code. The obsolete tin-lead package is marked
with a “102A” designator with an alphanumeric
lot code and a “0” on the right side of the
device.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1C
Value: Passes ≥ 1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possib le to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. En sure that the ground / thermal via
region contact the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles ar e in
degrees.
M TTF vs. G ND Tab Tem perature
1
10
100
1000
60 70 80 90 100 110 120
Tab Tem perature (°C)
