VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 1Document Number: 94340
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Input Rectifier Diode, 20 A
FEATURES
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Designed and qualified according to
JEDEC-JESD47
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Input rectification
Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-20ETS...SPbF rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
IF(AV) 20 A
VR800 V, 1200 V
VF at IF1.1 V
IFSM 300 A
TJ max. 150 °C
Diode variation Single die
3
Anode
1
Anode
Base
cathode
2
1
2
3
TO-263AB (D2PAK)
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W 16.3 21 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM 800/1200 V
IFSM 300 A
VF20 A, TJ = 25 °C 1.1 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM AT 150 °C
mA
VS-20ETS08SPbF 800 900 1
VS-20ETS12SPbF 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 316 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 2Document Number: 94340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.1 V
Forward slope resistance rtTJ = 150 °C 10.4 m
Threshold voltage VF(TO) 0.85 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.3
°C/W
Maximum thermal resistance,
junction to ambient RthJA (1) For D2PAK version 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6.0 (5.0) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK (SMD-220) 20ETS08S
20ETS12S
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 3Document Number: 94340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10
120
110
100
130
140
150
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
46821012
20 22
14 16 18
0
30° 60° 90° 120°
180°
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Conduction angle
Ø
90
140
150
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
1051520
30 35
25
0
DC
30° 60°
90°
120°
180°
20ETS.. Series
RthJC (DC) = 1.3 °C/W
Ø
Conduction period
0
5
20
25
30
15
10
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
420 24
81216
0
RMS limit
180°
120°
90°
60°
30°
20ETS.. Series
TJ = 150 °C
Conduction angle
Ø
0
30
35
25
20
15
10
5
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20 25
51015
0
DC
180°
120°
90°
60°
30°
RMS limit
20ETS.. Series
TJ = 150 °C
Ø
Conduction period
50
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
10 100
1
20ETS.. Series
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
50
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 1
0.01
20ETS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 4Document Number: 94340
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
Instantaneous Forward Current (A)
Instantaneous Forwad Voltage (V)
1.00.5 1.5 2.0 3.5 4.0
2.5 3.0
0
TJ = 25°C
TJ = 150°C
20ETS.. Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08 20ETS.. Series
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 5Document Number: 94340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETS08SPbF 50 1000 Antistatic plastic tube
VS-20ETS08STRRPbF 800 800 13" diameter reel
VS-20ETS08STRLPbF 800 800 13" diameter reel
VS-20ETS12SPbF 50 1000 Antistatic plastic tube
VS-20ETS12STRRPbF 800 800 13" diameter reel
VS-20ETS12STRLPbF 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95409
2- Current rating (20 = 20 A)
3- Circuit configuration
4- Package:
T = TO-220AC
S = TO-220 D2PAK (SMD-220) version
5- Type of silicon:
S = Standard recovery rectifier
PbF = Lead (Pb)-free
6- Voltage code x 100 = VRRM
7-
8- None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9-
E = Single diode
08 = 800 V
12 = 1200 V
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 20 E T S 12 S TRL PbF
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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20ETS12STRR 20ETS08SPBF VS-20ETS08STRLPBF VS-20ETS12SPBF VS-20ETS12STRLPBF VS-
20ETS12STRRPBF VS-20ETS08STRRPBF 20ETS08S 20ETS08STRL 20ETS08STRR 20ETS12 20ETS12FP
20ETS12S 20ETS12STRL