1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.5 GHz.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz
BLS6G2735L-30;
BLS6G2735LS-30
S-band LDMOS transistor
Rev. 2 — 4 September 2012 Preliminary data sheet
Table 1. Application information
Typical RF performance at Tcase =25
C; tp = 300
s;
= 10 %; IDq = 50 mA.
Test signal f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
Typica l RF performance in a class-AB production test circuit in band 3.1 GH z to 3.5 GHz
pulsed RF 3.1 to 3.5 32 30 13 50 20 10
Typica l RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
pulsed RF 2.7 to 3.3 32 35 14 50 20 10
Typica l RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
pulsed RF 2.7 to 3.5 32 30 12 47 20 10
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 2 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS6G2735L-30 (SOT1135A)
1drain
2gate
3source [1]
BLS6G2735LS-30 (SOT1135B)
1drain
2gate
3source [1]
1
2
3
sym112
1
3
2
2
3
1
sym112
1
3
2
Tabl e 3. Ordering i nformation
Type number Package
Name Description Version
BLS6G2735L-30 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135 A
BLS6G2735LS-30 - earle ss flanged ceramic package; 2 leads SOT1135 B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 225 C
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 3 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-c) transient thermal impedance from junction
to case Th=85C; PL(CW) =30W
tp=100s; = 10 % 0.507 K/W
tp=200s; = 10 % 0.662 K/W
tp=300s; = 10 % 0.761 K/W
tp=100s; = 20 % 0.594 K/W
Table 6. DC characteristics
Tj=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=0.5mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D=40mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V--1.4A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V -8.2-A
IGSS gate leakage current VGS =8.3V; V
DS = 0 V - - 140 nA
gfs forward transconductance VDS =10V; I
D=1.4A - 2.8 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) +3.75 V;
ID=1.4A - 0.37 0.58
Table 7. RF characteristics
Test signal: pulsed RF; f1 = 3100 MHz; f2 = 3300 MHz; f3 = 3500 MHz; tp = 300
s;
= 10 %;
VDS =32V; I
Dq =50mA; T
case =25
C; unless otherwise specified, in the class-AB RF production
test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 30 - W
Gppower gain PL=30W 11 13 - dB
Ddrain efficiency PL= 30 W 43 50 - %
trrise time PL=30W - 20 50 ns
tffall time PL=30W - 10 50 ns
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 4 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
7. Application information
7.1 Circuit information for application circuit (2.7 GHz to 3.5 GHz)
[1] TDK or capacitor of same quality.
[2] American Technical Ceramics type 800A or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm;
thickness copper plating = 35 m.
See Table 8 for a list of components.
Fig 1. Component layout for RF test circuit
Table 8. List of components
For test circuit see Figure 1.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 2 F, 50 V [1]
C2 multilayer ceramic chip capacitor 100 pF [2]
C3 multilayer ceramic chip capacitor 0.6 pF [2]
C4, C7 multilayer ceramic chip capacitor 1 0 pF [2]
C5 multilayer ceramic chip capacitor 1 F, 50 V [1]
C6 electrolytic capacitor 470 F, 63 V
aaa-001308
C1
C2
C3
C4
C5
C7
C6
VDD
VGG
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 5 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
7.2 Measured in application circuit from 2.7 GHz to 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 2700 MHz
(2) f = 2900 MHz
(3) f = 3100 MHz
(4) f = 3300 MHz
(5) f = 3500 MHz
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 2. Power gain and drain efficiency as function of
output power; typical values Fig 3. Output power as a function of input power;
typical values
PL (W)
0504020 3010
aaa-001302
35
Gp
(dB)
ηD
Gp
ηD
(%)
25
15
5
0
10
20
30
70
50
30
10
0
20
40
60
(5) (4) (3) (2) (1)
(5) (4) (3) (2) (1)
Pi (W)
04312
aaa-001303
20
30
10
40
50
PL
(W)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 6 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 4. Input return loss as a function of output power; typical values
PL (dBm)
28 484333 38
aaa-001304
10
5
15
20
RLin
(dB)
0
(1) (2) (3) (4) (5) (6) (7) (8) (9)
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 7 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 2700 MHz
(2) f = 2900 MHz
(3) f = 3100 MHz
(4) f = 3300 MHz
(5) f = 3500 MHz
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 5. Power gain and drain efficiency as function of
output power; typical values Fig 6. Output power as a function of input power;
typical values
PL (W)
0504020 3010
aaa-001305
35
Gp
(dB)
ηD
Gp
ηD
(%)
25
15
5
0
10
20
30
70
50
30
10
0
20
40
60
(5) (4) (3) (2) (1)
(5) (4) (3) (2) (1)
Pi (W)
04312
aaa-001306
20
30
10
40
50
PL
(W)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 8 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 7. Input return loss as a function of output power; typical values
PL (dBm)
28 484333 38
aaa-001307
10
5
15
20
RLin
(dB)
0
(1) (2) (3) (4) (5) (6) (7) (8) (9)
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 9 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
8. Test information
8.1 Ruggedness in class-AB operation
The BLS6G2735L-30 and BLS6G2 735LS-30 are capable of withst anding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS =32V; I
Dq =50mA; P
L=30W; t
p = 300 s; = 10 %.
8.2 Impedance information
Table 9. Typical impedan ce
Source and load impedances obtained in a wideband test circuit.
f ZSZL
GHz
2.7 3.4 j16.0 32.7 j3.8
2.9 4.3 j13.0 20.3 j4.2
3.1 5.4 j11.6 18.3 j3.9
3.3 5.4 j12.0 15.0 j7.2
3.5 3.7 j11.7 8.4 j6.6
Fig 8. Definition of transistor imp eda nc e
001aaf059
drain
Z
L
Z
S
gate
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 10 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
8.3 Circuit information for production test circuit (3.1 GHz to 3.5 GHz)
[1] American Technical Ceramics type 800A or capacitor of same quality.
[2] TDK or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers Duroid 6006; r = 6.15; thickness = 0.64 mm;
thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 9. Component layout for RF production test circuit
Table 10. List of components
For test circuit see Figure 9.
Component Description Value Remarks
C1, C3, C4, C8 multi layer ceramic chip capacitor 10 pF [1]
C2 multilayer ceramic chip capacitor 1 F[2]
C5 multilayer ceramic chip capacitor 4.7 F, 50 V [2]
C6 multilayer ceramic chip capacitor 10 F, 50 V [2]
C7 electrolytic capacitor 100 F, 63 V
R1 SMD resistor 10
9''
9**
0+]0+] 0+]0+]
&
&
5
&
& &
&
&
&
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 11 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
8.4 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 10. Power gain and drain efficiency as function of
output power; typical values Fig 11. Output power as a function of input power;
typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
*S
*S
Ș'
Ș'
DDD
3L:
3/
3/
:::
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 12. Power gain and drain efficiency as function of
output power; typical values Fig 13. Output power as a function of input power;
typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
*S
*S
Ș'
Ș'
DDD
3L:
3/
3/
:::
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 12 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
9. Package outline
Fig 14. Package outline SOT1135A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1135A
sot1135a_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.65
3.76
5.26
5.00
9.65
9.40
9.65
9.40
9.65
9.40
9.65
9.40
19.94
18.92
3.30
2.92 15.24 0.51
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
bc
0.18
0.10
DD
1EE
1F
1.14
0.89
HpQ
1.70
1.45
qU
1
20.45
20.19
U2
9.91
9.65
w1
0.25
w2
inches max
nom
min
0.183
0.148
0.207
0.197
0.38
0.37
0.38
0.37
0.38
0.37
0.38
0.37
0.785
0.745
0.130
0.115 0.6 0.02
0.007
0.004
0.045
0.035
0.067
0.057
0.805
0.795
0.39
0.38 0.01
A
D
F
D1
c
E
E1
Q
B
C
A
q
U1
U2
b
2
1
3
Hp
AB
w1
Cw2
0 5 10 mm
scale
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 13 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
Fig 15. Package outline SOT1135B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1135B
sot1135b_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.65
3.76
5.26
5.00
9.65
9.40
9.65
9.40
9.65
9.40
9.65
9.40
19.94
18.92
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Earless flanged ceramic package; 2 leads SOT1135B
bc
0.18
0.10
DD
1EE
1F
1.14
0.89
HQ
1.70
1.45
U1
9.91
9.65
U2
9.91
9.65
w2
0.51
inches max
nom
min
0.183
0.148
0.207
0.197
0.38
0.37
0.38
0.37
0.38
0.37
0.38
0.37
0.785
0.745
0.007
0.004
0.045
0.035
0.067
0.057
0.39
0.38
0.39
0.38 0.02
c
E
E1
Q
U1
U2
b
2
1
H
Dw2
0 5 10 mm
scale
A
D
F
D1
3D
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 14 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
S-band Short wave Band
VSWR Voltage Standing-Wave Ratio
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS6G2735L-30_6G2735LS-30 v.2 20120904 Preliminary data sheet - BLS6G2735L-30_
6G2735LS-30 v.1
Modifications: •Section 7 “Application info rmation” on page 4: Section has been added.
•Section 8 “Test information” on page 9: Graphs and circuit information have
been moved to Section 7 “Application information” on page 4.
•Section 8 “Test information” on page 9: New graphs and circuit information
have been added.
BLS6G2735L-30_6G2735LS-30 v.1 20111011 Objective data sheet - -
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 15 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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Short data sheet — A short data sheet is an extract from a full data sheet
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full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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data sheet shall define the specification of the product as agr eed between
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property right s.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data fro m the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLS6G2735L-30_6G2735LS-30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Preliminary data sheet Rev. 2 — 4 September 2012 16 of 17
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applicati ons.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 September 2012
Document identifier: BLS6G2735L-30_6G2735LS-30
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Circuit information for application circuit
(2.7 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . . 4
7.2 Measured in application circuit from 2.7 GHz
to 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Ruggedness in class-AB operation . . . . . . . . . 9
8.2 Impedance information. . . . . . . . . . . . . . . . . . . 9
8.3 Circuit information for production test circuit
(3.1 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . 10
8.4 Measured in RF production test circuit from
3.1 GHz to 3.5 GHz . . . . . . . . . . . . . . . . . . . . 11
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Handling information. . . . . . . . . . . . . . . . . . . . 14
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
