V
RRM
= 400 V - 600 V
I
F
= 35 A
Features
• High Surge Capability DO-5 Package
• Types from 400 to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
etitive
eak reverse volta
eV
RRM
V
1N1188 thru 1N1190R
2. Reverse polarity (R): Stud is anode.
Conditions 1N1188 (R) 1N1189 (R) 1N1190 (R)
500
Silicon Standard
Recover
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
400 600
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 50 V, T
j
= 25 °C
I
F
= 35 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 140 °C
Conditions
350280
0.25 0.25
V
R
= 50 V, T
j
= 140 °C 10 10 10
500400
10
1N1190 (R)
1.2
10 10
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
1N1188 (R) 1N1189 (R)
0.25
35 35 35
595 595 595
420
600
1.2 1.2
-55 to 150
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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