IXTC110N25T TrenchTM Power MOSFETs VDSS ID25 RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = 250V = 50A 27m ISOPLUS220 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 50 A IDM TC = 25C, Pulse Width Limited by TJM 300 A IA EAS TC = 25C TC = 25C 25 1 A J dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 180 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V 11..65/2.5..14.6 N/lb. 4 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G DS G = Gate S = Source Isolated Tab D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface International Standard Package 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low RDS(on) Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 250 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 20V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 5 A 250 A RDS(on) TJ = 125C VGS = 10V, ID = 55A, Notes 1, 2 (c) 2012 IXYS CORPORATION, All Rights Reserved Applications V 5.0 High Power Density Easy to Mount Space Savings V z z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Moter Drives Uninterruptible Power Supplies 27 m DS99841C(05/12) IXTC110N25T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 55A, Note 1 65 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 55A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 25A Qgd ISOPLUS220 (IXTC) Outline 110 S 9400 pF 850 pF 55 pF 19 ns 27 ns 60 ns 27 ns 157 nC 40 nC 50 nC 1.Gate 2. Drain 3.Source 4. Isolated Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, & 3. 0.69 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 350 A VSD IF = 55A, VGS = 0V, Note 1 1.2 V trr IRM QRM Notes: IF = 55A, -di/dt = 250A/s VR = 100V, VGS = 0V 170 ns 27 A 2.3 C 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole package, RDS(ON) kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTC110N25T Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 250 VGS = 10V 8V 7V 100 200 ID - Amperes 6V 80 ID - Amperes VGS = 10V 8V 7V 60 5.5V 40 150 6V 100 50 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature 20 3.2 VGS = 10V 8V 7V 100 6V R DS(on) - Normalized ID - Amperes 80 60 40 VGS = 10V 2.8 5V 20 2.4 I D = 110A 2.0 I D = 55A 1.6 1.2 0.8 0.4 0 0 1 2 3 4 5 -50 6 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 TJ = 125C 40 2.6 ID - Amperes R DS(on) - Normalized 50 VGS = 10V 3.0 2.2 1.8 30 20 1.4 TJ = 25C 10 1.0 0.6 0 0 50 100 150 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTC110N25T Fig. 8. Transconductance Fig. 7. Input Admittance 160 180 140 160 120 120 g f s - Siemens ID - Amperes TJ = - 40C 140 TJ = 125C 25C - 40C 100 80 25C 100 60 125C 80 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 20 40 VGS - Volts 80 100 120 140 160 120 140 160 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 9 250 VDS = 125V I D = 25A 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 60 150 100 TJ = 125C 6 5 4 3 TJ = 25C 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 VSD - Volts 60 80 100 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1 Ciss 10,000 Z (th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.1 Crss 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTC110N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 30 32 RG = 2, VGS = 15V t r - Nanoseconds t r - Nanoseconds 26 I D = 110A 24 I RG = 2, VGS = 15V 30 VDS = 125V 28 D = 55A VDS = 125V TJ = 25C 28 26 24 22 TJ = 125C 22 20 20 18 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 60 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 31 38 29 34 t r - Nanoseconds 27 = 110A, 55A 35 25 30 23 25 20 2 3 4 5 6 7 8 9 t d ( o n ) - Nanoseconds VDS = 125V 40 D 30 26 62 I D = 110A 58 21 18 54 19 14 25 10 35 45 55 65 75 85 95 105 115 50 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - 110 70 TJ = 125C TJ = 25C 60 22 50 200 I D = 55A, 110A VDS = 125V t f - Nanoseconds 26 td(off) - - - - TJ = 125C, VGS = 15V 90 t d ( o f f ) - Nanoseconds 80 TJ = 25C t d ( o f f ) - Nanoseconds VDS = 125V 240 tf 90 RG = 2, VGS = 15V t f - Nanoseconds 66 I D = 55A 22 100 24 70 VDS = 125V TJ - Degrees Centigrade 32 28 120 td(off) - - - - Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 110 RG = 2, VGS = 15V RG - Ohms 30 100 t d ( o f f ) - Nanoseconds TJ = 125C, VGS = 15V I 90 74 tf td(on) - - - - t f - Nanoseconds tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 70 ID - Amperes 70 160 50 120 30 80 TJ = 125C 20 20 30 40 50 60 70 80 90 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 100 110 40 120 10 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_110N25T(8W)05-14-12-B