A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/2
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
ELECTRICAL CHARACTERISTICS TA = 25 °C NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 60 V
BVCBO IC = 5.0 mA 120 V
BVEBO IE = 1.0 mA 6.0 V
ICES VCE = 60 V 0.02 µ
µµ
µA
IEBO VEB = 4.0 V 10 µ
µµ
µA
hFE
VCE = 2.0 V IC = 1.0 A
VCE = 0.6 V IC = 2.0 A
VCE = 2.0 V IC = 2.0 A
40
100
75
80
150 ---
VCE(SAT) IC = 5.0 A IB = 500 mA
1.0 V
VBE(SAT) IC = 5.0 A IB = 500 mA
1.6 V
NPN SILICON SWITCHING TRANSISTOR
BFX34
DESCRIPTION:
The ASI BFX34 is Desig ned for
General Purpose Medium Power
Switching and Amplifier applications.
MAX IMUM RATINGS
IC 5.0 A
VCBO 120 V
VCEO 60 V
PDISS 5.0 W @ T A = 25 °C
TJ -65 to +200 °C
TSTG -65 to +200 °C
θ
θθ
θJC 35 °C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 2/2
2N5109
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
BFX34
DYNAMIC EL E CTRICAL CHARACTERISTICS TA = 25 OC
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
ft VCE = 5.0 V IC = 500 mA f = 20 MHz 70 MHz
CEBO VEB = 0.5 V f =1.0 MHz 500 pF
CCBO VCB = 10 V f =1.0 MHz 100 pF
ton
toff VCC = 20 V IC= 0.5 A IB1 = -IB2 = 500 mA
0.25
1.2 µ
µµ
µS
