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MBR 1030CT THRU MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
30 to 200 Volts
Current
10.0 Amperes
F
eatures
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
M
echanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
TO-220
Dime nsion s in inche s an d (millimete r s)
M
aximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half w a ve, 60 Hz, resistive o r ind uctive lo ad .
For capacitive load, derate current by 20%
Type Number Symbol
MBR
1030
CT
MBR
1035
CT
MBR
1040
CT
MBR
1045
CT
MBR
1050
CT
MBR
1060
CT
MBR
1010
0CT
MBR
1015
0CT
MBR
1020
0CT
Unit
s
Maximum Recurrent Peak Reverse Voltage VRRM 30
35
40
45
50
60
100
150
200
V
Maximum RMS Voltage VRMS 21
24
28
31
35
42
70
105
140
V
Maximum DC Blocking Voltage VDC 30
35
40
45
50
60
100
150
200
V
Maximum Average Forward Rectified Current
at Tc=125OC I(AV) 10 A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC IFRM 32 A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method ) IFSM 120 A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM 0.5 A
Maximum Instantaneous Forward Voltage at:
(Note 2) I
F
=5A, T
C
=25
o
C
I
F
=5A, T
C
=125
o
C
VF
0.70
0.57
0.80
0.65
0.85
0.75
0.88
0.78
0.99
0.87
V
Maximum Instantaneous Reverse Current
@ Tc =25℃ at Rated DC Blocking
Voltage
(Note 2) IR 0.1 0.8 0.2
mA
Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS
Maximum Typical Thermal Resistance (Note 3)
RθJC 1.5 ℃/W
Operating Junction Temperature Range TJ -65 to +150 ℃
Storage Temperature Range TSTG -65 to +175 ℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
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FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
10.1 10 100
180
150
120
90
60
30
0
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
0.6 0.8 1.0 1.10.90.70.50.40.30.20.101.2
0.1
0.01
1
10
40
FORWARD VOLTAGE. (V)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT.(mA)
020 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0.001
0.1
0.01
1
10
50
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
PER LEG
TRANSIENT THERMAL IMPEDANCE. ( C/W)
O
10.01 0.1 10 100
0.1
10.0
1
100
T, PULSE DURATION. (sec)
FIG.5- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
0.1 1.0 10 100
100
1,000
5,000
REVERSE VOLTAGE. (V)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
FIG.1- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT. (A)
050 100 150
6
5
4
3
2
1
0
CASE TEMPERATURE. ( C)
o
RESISTIVE OR
INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES (MBR1030CT THRU MBR10200CT)
Pulse Width=300 s
1% Duty Cycle
500
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
MBR10200CT
MBR10150CT
MBR10100CT
MBR1050CT-MBR1060CT
MBR1030CT-MBR1045CT
Tj=25 C
0
Tj=75 C
0
Tj=125 C
0
Tj=25 C
0
