P6SMBJ5.0 ... P6SMBJ170CA
P6SMBJ5.0 ... P6SMBJ170CA
SMD Transient Voltage Suppressor Diodes
SMD Spannungs-Begrenzer-Dioden
PPPM = 600 W
PM(AV) = 5.0 W
Tjmax = 150°C
VWM = 5.0 ... 170 V
VBR = 6.8 ... 200 V
Version 2016-07-04
~ SMB / ~ DO-214AA
Dimensions - Maße [mm]
Type Code = VWM. Cathode mark
only at unidirectional types
Typ-Code = VWM. Kathoden-Markierung
nur bei unidirektionalen Typen
Typical Applications
Over-voltage protection
ESD protection
Free-wheeling diodes
Commercial grade 1)
Typische Anwendungen
Schutz gegen Überspannung
ESD-Schutz
Freilauf-Dioden
Standardausführung 1)
Features
Uni- and Bidirectional versions
Peak pulse power of 600 W
(10/1000 µs waveform)
Very fast response time
Further available: P6SMB220...550CA
having VBR = 220 ... 550 V
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Uni- und Bidirektionale Versionen
600 W Impuls-Verlustleistung
(10/1000 µs Strom-Impuls)
Sehr schnelle Ansprechzeit
Auch erhältlich: P6SMB220...550CA
mit VBR = 220 ... 550V
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1) Mechanische Daten 1)
Taped and reeled 3000 / 13“ Gegurtet auf Rolle
Weight approx. 0.1 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL = 1
For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (mit Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings 2) Grenzwerte 2)
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C PPPM 600 W 3)
Steady state power dissipation – Verlustleistung im Dauerbetrieb TT = 75°C PM(AV) 5 W
Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 60 Hz TA = 25°C IFSM 100 A 4)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics Kennwerte
Max. instantaneous forward
voltage Augenblickswert der Durchlass-Spannung
IF = 25 A VBR ≤ 200 V VF< 3.0 V 4)
Thermal resistance junction to ambien – Wärmewiderstand Sperrschicht – Umgebung
Thermal resistance junction to terminal – Wärmewiderstand Sperrschicht − Anschluss
RthA
RthT
< 45 K/W 5)
< 15 K/W
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3 Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
4 Unidirectional diodes only – Nur für unidirektionale Dioden
5 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG http://www.diotec.com/ 1
Pb
E
L
V
W
E
E
E
R
o
H
S
1.1
2.2
± 0.2
Type
Typ
2.1
± 0.1
3.7
± 0.3
2
4.6
± 0.5
5.4
± 0.5
0.15
P6SMBJ5.0 ... P6SMBJ170CA
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Type
Typ
Stand-off
voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM 1)
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
unidire
bidire
VWM [V]
ID [µA]
VBR min [V]
VBR max [V]
VC [V]
P6SMBJ5.0
P6SMBJ5.0C
5.0
800
6.4 *)
7.8 *)
10.3
P6SMBJ5.0A
P6SMBJ5.0CA
5.0
800
6.4 *)
7.0 *)
9.2
P6SMBJ6.0
P6SMBJ6.0C
6.0
800
6.7 *)
8.2 *)
11.4
P6SMBJ6.0A
P6SMBJ6.0CA
6.0
800
6.7 *)
7.4 *)
10.3
P6SMBJ6.5
P6SMBJ6.5C
6.5
500
7.2 *)
8.8 *)
12.3
P6SMBJ6.5A
P6SMBJ6.5CA
6.5
500
7.2 *)
8.0 *)
11.2
P6SMBJ7.0
P6SMBJ7.0C
7.0
200
7.8 *)
9.5 *)
13.3
P6SMBJ7.0A
P6SMBJ7.0CA
7.0
200
7.8 *)
8.7 *)
12.0
P6SMBJ7.5
P6SMBJ7.5C
7.5
100
8.3
10.1
14.3
P6SMBJ7.5A
P6SMBJ7.5CA
7.5
100
8.3
9.2
12.9
P6SMBJ8.0
P6SMBJ8.0C
8.0
50
8.9
10.9
15.0
P6SMBJ8.0A
P6SMBJ8.0CA
8.0
50
8.9
9.9
13.6
P6SMBJ8.5
P6SMBJ8.5C
8.5
10
9.4
11.5
15.9
P6SMBJ8.5A
P6SMBJ8.5CA
8.5
10
9.4
10.4
14.4
P6SMBJ9.0
P6SMBJ9.0C
9.0
5
10.0
12.2
16.9
P6SMBJ9.0A
P6SMBJ9.0CA
9.0
5
10.0
11.1
15.4
P6SMBJ10
P6SMBJ10C
10
5
11.1
13.5
18.8
P6SMBJ10A
P6SMBJ10CA
10
5
11.1
12.3
17.0
P6SMBJ11
P6SMBJ11C
11
5
12.2
14.9
20.1
P6SMBJ11A
P6SMBJ11CA
11
5
12.2
13.5
18.2
P6SMBJ12
P6SMBJ12C
12
5
13.3
16.2
22.0
P6SMBJ12A
P6SMBJ12CA
12
5
13.3
14.8
19.9
P6SMBJ13
P6SMBJ13C
13
5
14.4
17.6
23.8
P6SMBJ13A
P6SMBJ13CA
13
5
14.4
16.0
21.5
P6SMBJ14
P6SMBJ14C
14
5
15.6
19.0
25.8
P6SMBJ14A
P6SMBJ14CA
14
5
15.6
17.3
23.2
P6SMBJ15
P6SMBJ15C
15
5
16.7
20.4
26.9
P6SMBJ15A
P6SMBJ15CA
15
5
16.7
18.6
24.4
P6SMBJ16
P6SMBJ16C
16
5
17.8
21.7
28.8
P6SMBJ16A
P6SMBJ16CA
16
5
17.8
19.8
26.0
P6SMBJ17
P6SMBJ17C
17
5
18.9
23.1
30.5
P6SMBJ17A
P6SMBJ17CA
17
5
18.9
21.0
27.6
P6SMBJ18
P6SMBJ18C
18
5
20.0
24.4
32.2
P6SMBJ18A
P6SMBJ18CA
18
5
20.0
22.2
29.2
P6SMBJ20
P6SMBJ20C
20
5
22.2
27.1
35.8
P6SMBJ20A
P6SMBJ20CA
20
5
22.2
24.6
32.4
P6SMBJ22
P6SMBJ22C
22
5
24.4
29.8
39.4
P6SMBJ22A
P6SMBJ22CA
22
5
24.4
27.1
35.5
P6SMBJ24
P6SMBJ24C
24
5
26.7
32.6
43.0
P6SMBJ24A
P6SMBJ24CA
24
5
26.7
29.6
38.9
P6SMBJ26
P6SMBJ26C
26
5
28.9
35.3
46.6
P6SMBJ26A
P6SMBJ26CA
26
5
28.9
32.1
42.1
P6SMBJ28
P6SMBJ28C
28
5
31.1
37.9
50.0
P6SMBJ28A
P6SMBJ28CA
28
5
31.1
34.5
45.4
P6SMBJ30
P6SMBJ30C
30
5
33.3
40.1
53.5
P6SMBJ30A
P6SMBJ30CA
30
5
33.3
36.9
48.4
P6SMBJ33
P6SMBJ33C
33
5
36.7
44.8
59.0
1 Bi-directional types with VWM ≤ 10V have double reverse current limit – Bidirektionale Typen mit VWM ≤ 10V haben die doppelte Sperrstromgrenze
2http://www.diotec.com/ © Diotec Semiconductor AG
P6SMBJ5.0 ... P6SMBJ170CA
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Type
Typ
Stand-off
voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM )
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
unidire
bidire
VWM [V]
ID [µA]
VBR min [V]
VBR max [V]
VC [V]
P6SMBJ33A
P6SMBJ33CA
33
5
36.7
40.7
53.3
P6SMBJ36
P6SMBJ36C
36
5
40.0
48.4
64.3
P6SMBJ36A
P6SMBJ36CA
36
5
40.0
44.4
58.1
P6SMBJ40
P6SMBJ40C
40
5
44.4
54.2
71.4
P6SMBJ40A
P6SMBJ40CA
40
5
44.4
49.3
64.5
P6SMBJ43
P6SMBJ43C
43
5
47.8
58.3
76.7
P6SMBJ43A
P6SMBJ43CA
43
5
47.8
53.1
69.4
P6SMBJ45
P6SMBJ45C
45
5
50.0
61.0
80.3
P6SMBJ45A
P6SMBJ45CA
45
5
50.0
55.5
72.7
P6SMBJ48
P6SMBJ48C
48
5
53.3
65.0
85.5
P6SMBJ48A
P6SMBJ48CA
48
5
53.3
59.2
77.4
P6SMBJ51
P6SMBJ51C
51
5
56.7
69.2
91.1
P6SMBJ51A
P6SMBJ51CA
51
5
56.7
62.9
82.4
P6SMBJ54
P6SMBJ54C
54
5
60.0
73.2
96.3
P6SMBJ54A
P6SMBJ54CA
54
5
60.0
66.6
87.1
P6SMBJ58
P6SMBJ58C
58
5
64.4
78.6
103
P6SMBJ58A
P6SMBJ58CA
58
5
64.4
71.5
93.6
P6SMBJ60
P6SMBJ60C
60
5
66.7
81.4
107
P6SMBJ60A
P6SMBJ60CA
60
5
66.7
74.0
96.8
P6SMBJ64
P6SMBJ64C
64
5
71.1
86.7
114
P6SMBJ64A
P6SMBJ64CA
64
5
71.1
78.9
103
P6SMBJ70
P6SMBJ70C
70
5
77.8
94.9
125
P6SMBJ70A
P6SMBJ70CA
70
5
77.8
86.4
113
P6SMBJ75
P6SMBJ75C
75
5
83.3
102
134
P6SMBJ75A
P6SMBJ75CA
75
5
83.3
92.5
121
P6SMBJ78
P6SMBJ78C
78
5
86.7
106
139
P6SMBJ78A
P6SMBJ78CA
78
5
86.7
96.2
126
P6SMBJ85
P6SMBJ85C
85
5
94.4
115
151
P6SMBJ85A
P6SMBJ85CA
85
5
94.4
105
137
P6SMBJ90
P6SMBJ90C
90
5
100
122
160
P6SMBJ90A
P6SMBJ90CA
90
5
100
111
146
P6SMBJ100
P6SMBJ100C
100
5
111
135
179
P6SMBJ100A
P6SMBJ100CA
100
5
111
123
162
P6SMBJ110
P6SMBJ110C
110
5
122
149
196
P6SMBJ110A
P6SMBJ110CA
110
5
122
135
177
P6SMBJ120
P6SMBJ120C
120
5
133
162
214
P6SMBJ120A
P6SMBJ120CA
120
5
133
148
193
P6SMBJ130
P6SMBJ130C
130
5
144
176
231
P6SMBJ130A
P6SMBJ130CA
130
5
144
160
209
P6SMBJ150
P6SMBJ150C
150
5
167
204
268
P6SMBJ150A
P6SMBJ150CA
150
5
167
185
243
P6SMBJ160
P6SMBJ160C
160
5
178
217
287
P6SMBJ160A
P6SMBJ160CA
160
5
178
198
259
P6SMBJ170
P6SMBJ170C
170
5
189
231
304
P6SMBJ170A
P6SMBJ170CA
170
5
189
210
275
P6SMB220 ... P6SMB550CA VWM = 175 ... 495 V
© Diotec Semiconductor AG http://www.diotec.com/ 3
P6SMBJ5.0 ... P6SMBJ170CA
1
TVS diodes having breakdown voltage VBR = 220 ... 550 V:
please refer to datasheet P6SMB220 ... 550CA
TVS-Dioden mit Abbruchspannung VBR = 220 ... 550 V:
siehe Datenblatt P6SMB220 ... 550CA
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4http://www.diotec.com/ © Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
P
PP
[°C]T
A
150100
50
0
I
PP
Peak pulse power/current vs. ambient temperature )
Impuls-Spitzenleistung/Strom vs. Umgebungstemp. )
1
1
10/1000µs - pulse waveform
10/1000µs - Impulsform
I
PP
P
PP
100
80
60
40
20
00 t 1 2 3 4[ms]
[%]
t
P
I /2
PPM
P /2
PPM
t = 10 µs
r
10
10
1
0.1
2
P
PP
0.1µs t 1µs 10µs 100µs 1ms 10ms
P
[kW]
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
[pF]
[V]
C
j
V
BR
Junction capacitance vs. breakdown voltage (typ.)
Sperrschichtkapazität in Abh. v.d. Abbruchspg. (typ.)
unidir.
bidir.
V = 4 V
R