This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 5.50.2 16.70.3 * High forward current transfer ratio hFE which has satisfactory linearity * High emitter-base voltage (Collector open) VEBO * Full-pack package which can be installed to the heat sink with one screw 2.70.2 7.50.2 M Di ain sc te on na tin nc ue e/ d Features 4.20.2 4.20.2 0.70.1 Unit: mm 10.00.2 3.10.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 15 V Collector current IC 6 A Peak collector current ICP 12 A Collector power dissipation PC 40 W Ta = 25C 1.30.2 1.40.1 Solder Dip (4.0) Parameter 14.00.5 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Absolute Maximum Ratings TC = 25C 0.5+0.2 -0.1 0.80.1 2.540.3 5.080.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2.0 Junction temperature Tj Storage temperature Tstg 150 C -55 to +150 C Electrical Characteristics TC = 25C 3C Symbol Collector-emitter voltage (Base open) Conditions VCEO IC = 25 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 15 V, IC = 0 Forward current transfer ratio * hFE VCE = 4 V, IC = 1 A VCE(sat) IC = 5 A, IB = 0.1 A ce /D isc on tin ue Parameter int Ma Turn-on time en Transition frequency an Collector-emitter saturation voltage Storage time Fall time Min Typ Max Unit 100 A 100 A 2 000 60 V 300 0.5 V fT VCE = 12 V, IC = 0.5 A, f = 10 MHz 30 MHz ton IC = 5 A, IB1 = 0.1 A, IB2 = - 0.1 A 0.3 s tstg VCC = 50 V 1.5 s 0.6 s tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE 300 to 1 200 800 to 2 000 Publication date: February 2003 SJD00197BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1474 PC Ta IC VCE 5 (1) 40 Collector-emitter saturation voltage VCE(sat) (V) TC=25C IB=10mA Collector current IC (A) 60 VCE(sat) IC 6 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=2W) 9mA 8mA 4 7mA 6mA 3 5mA 10 IC/IB=50 1 TC=100C 25C M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 80 20 4mA 2 3mA 2mA 1 (2) 1mA 40 80 120 160 Ambient temperature Ta (C) Forward current transfer ratio hFE 25C 0.1 0.01 0.01 1 102 10 1 10 Collector-base voltage VCB (V) 2 Turn-on time ton , Storage time tstg , Fall time tf (s) int en an IE=0 f=1MHz TC=25C Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 1 0.1 8 10 12 0.01 0.1 25C -25C 102 100 0.1 1 1 0.1 0.01 10 tf ton 0.1 2 4 6 Collector current IC (A) SJD00197BED 10 8 Non repetitive pulse TC=25C ICP 10 IC t=10ms DC 1 0.1 0.01 0 1 Safe operation area 100 tstg 0.01 0.1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=-IB2) VCC=50V TC=25C 1 VCE=12V f=10MHz TC=25C 10 ton, tstg, tf IC 10 fT I C 100 Collector current IC (A) 100 10 1 000 TC=100C 103 1 Collector current IC (A) 104 ce /D isc on tin Collector current IC (A) 103 6 VCE=4V 10 0.01 10 104 4 105 ue Base-emitter saturation voltage VBE(sat) (V) TC=-25C 100C 2 hFE IC IC/IB=50 1 0 Collector-emitter voltage VCE (V) VBE(sat) IC 10 0 Transition frequency fT (MHz) 0 Collector current IC (A) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (3) -25C 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) 103 10-3 10-2 10-1 Time t (s) 1 10 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int 10-2 10-4 Ma Thermal resistance Rth (C/W) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1474 Rth t (1)Without heat sink (2)With a 100x100x2mm Al heat sink 102 (1) 10 (2) 1 10-1 102 103 SJD00197BED 104 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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