EGP20A-EGP20K
EGP20A - EGP20K, Rev. A
EGP20A - EGP20K
2.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
DO-15
COLOR BAND DENOTES CATHODE
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lead length @ TA = 55 °C2.0 A
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)75 A
PDTotal Device Dissipation
Derate above 25°C3.13
25 W
mW/°C
RθJA Thermal Resistance, Junction to Ambient 40 °C/W
RθJL Thermal Resistance, Junction to Lead 15 °C/W
TstgStorage Temperature Range -65 to +150 °C
TJOperating Junction Temperature -65 to +150 °C
Features
•Glass passivated cavity-free junction.
•High surge current capability.
•Low leakage current.
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
1.0 min(25.4)
0.140(3.56)
0.104(2.64)
0.034(0.86)
0.028(0.71)
0.300(7.62)
0.230(5.84)
Dimensions in
inches (mm)
Parameter Device Units
20A 20B 20C 20D 20F 20G 20J 20K
Peak Repeti tive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 125°C5.0
100 µA
µA
Maximum Reverse Recovery T i me
IF = 0.5 A, IR = 1.0 A , Irr = 0. 25 A 50 75 nS
Maximum Forward V oltage @ 2.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz 70 45 pF
Discrete POWER & Signal
Technologies
EGP20A-EGP20K
EGP20A - EGP20K, Rev. A
Typical Characteristics
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Forward Curre nt Deratin g Curve
0 25 50 75 100 125 150 175
0
1
2
3
AMBIENT TEMPERATURE ( C)
FO RWARD CURRE NT (A )
º
SINGLE PHASE
HA L F WAVE
60HZ
RESI STIV E OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
Non-Rep etitive Su rge Cu rrent
12 51020 50100
0
15
30
45
60
75
90
NUMBER O F C YCLES AT 60 Hz
PEAK FORWARD SURGE CURREN T (A)
Forwa rd Characteri sti cs
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
FORWARD CURRENT (A)
Pulse W idth = 300µs
2% Duty Cycle
T = 25 C
º
A
EGP20A-EGP20D
EGP20F-EGP20K
T = 150 C
º
A
Ju nc ti o n C apac itan c e
0.1 1 10 100 1000
0
20
40
60
80
100
120
140
REVERSE VOLTAG E (V)
CAPACITANCE (pF)
EGP20F-EGP2 0K
EGP20A-EGP20D
Reverse Char acter is tics
0 20406080100120140
0.001
0.01
0.1
1
10
100
PER CENT OF RA TED PEA K REVERS E VOLTAG E (%)
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
T = 150 C
º
A
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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