Mar. 2006
APPLICATIONS
Motor drive, switching power supply, DC/DC converter and
general purpose.
FEATURES
¡RATING VOLTAGE ....................................................... 24V
¡OUTPUT CURRENT ..................................... +0.8A, –0.6A
¡POWER-SUPPLY RANGE OF OPERATION ... 4.5V ~ 24V
(RECOMMENDATION POWER SUPPLY RANGE : 4.5V ~ 17 V)
¡HIGH-SPEED SWITCHING TIME
(22ns typ, CL = 1000pF)
¡DUAL BUFFER
¡SOP-8 PACKAGE
DESCRIPTION
M81716FP is a dual buffer type general purpose driver by
24V rating voltage.
SWITCHING TIME EXAMINATION CIRCUIT DIAGRAM
PIN CONFIGURATION (TOP VIEW)
Outline:8P2S
NC:NO CONNECTION
MITSUBISHI SEMICONDUCTORS <LVIC>
M81716FP
GENERAL PURPOSE DRIVER
1. NC
2. IN A
3. GND
4. IN B
8. NC
7. OUT A
6. VDD
5. OUT B
t
D1
t
r
t
f
90%90%
1000pF
4.7µF 0.1µF
1000pF
90%
10% 10%
10%
+5V
+0.4V
0V
+15V
INPUT
INPUT A
INPUT B
OUTPUT A
OUTPUT B
OUTPUT
INPUT
RISE AND FALL
TIMES = 5ns
t
D2
V
DD
= 15V
M81716FP
BLOCK DIAGRAM
V
DD
IN OUT
GND
Mar. 2006
V
V
°C
4.5
GND
–40
—
—
—
17
VDD
100
Supply Voltage
Logic Input Voltage
Operation Temperature
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
IN A/B Terminal
VDD
VIN
Topr
RECOMMENDED OPERATING CONDITIONS
MITSUBISHI SEMICONDUCTORS <LVIC>
M81716FP
GENERAL PURPOSE DRIVER
V
V
W
°C
°C
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
0 ~ 24
GND–0.3 ~ VDD+0.3
0.5
–40 ~ 125
–40 ~ 125
IN A/B Terminal
Ta = 25°C, On Board
Supply Voltage
Logic Input Voltage
Package Power Dissipation
Junction Temperature
Storage Temperature
VDD
VIN
Pd
Tj
Tstg
Symbol Parameter Test conditions Ratings Unit
* For proper operation, the device should be used within the recommended conditions.
ns
ns
ns
ns
—
—
—
—
35
25
22
22
—
—
—
—
Turn-On Rise Time
Turn-Off Fall Time
Delay Time1
Delay Time2
Symbol UnitParameter Test conditions Limits
Min. Typ.* Max.
CL = 1000pF
CL = 1000pF
CL = 1000pF
CL = 1000pF
tr
tf
tD1
tD2
ELECTRICAL CHARACTERISTICS (AC characteristic ; VDD = 15V, VIN = 0V, 5V)
* Typ. is not specified.
V
V
µA
V
V
mA
mA
A
A
Ω
Ω
4.4
—
–1
VDD–0.1
—
—
—
0.80
0.60
—
—
—
—
—
—
—
4.0
—
1.00
0.80
7
6
—
1.8
1
—
0.1
8.0
0.05
—
—
12
11
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
Input Bias Current
High Level Output Voltage
Low Level Output Voltage
VDD Supply Current
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
Symbol UnitParameter Test conditions Limits
Min. Typ.* Max.
VDD = 15V
VDD = 15V
VIN = 0V or VDD
IO = 0A
IO = 0A
VDD = 15V, VIN = 5V(both inputs)
VDD = 15V, VIN = 0V(both inputs)
VDD = 15V, PW ≤ 10µs, VOUT = 0V
VDD = 15V, PW ≤ 10µs, VOUT = 9V
VDD = 15V, Iload = 10mA, VOUT = “H”
VDD = 15V, Iload = 10mA, VOUT = “L”
VIH
VIL
IIN
VOH
VOL
Isupp
IOH
IOL
ROUT
ELECTRICAL CHARACTERISTICS (DC characteristic ; VDD = 4.5V ~ 17V)
* Typ. is not specified.
PW : Input Pulse Wide
Iload : Supply input-and-output current to the OUT A/B terminal
Mar. 2006
MITSUBISHI SEMICONDUCTORS <LVIC>
M81716FP
GENERAL PURPOSE DRIVER
PERFORMANCE CURVES
t
r
- Topr
Operation Temperature Topr (°C)
Turn-On Rise Time t
r
(ns)
–50 –25 0 25 50 75 100 125 150
0
20
40
60
80
100
VDD = 15V
VIN = 5V
C = 1000pF
t
f
- Topr
Turn-Off Fall Time t
f
(ns)
–50 –25 0 25 50 75 100 125 150
0
20
40
60
80
100
VDD = 15V
VIN = 5V
C = 1000pF
t
r
- V
DD
Supply Voltage V
DD
(V)
Turn-On Rise Time t
r
(ns)
051015 20 25
0
20
40
60
80
100
Topr = 25°C
VIN = 5V
C = 1000pF
t
f
- V
DD
Supply Voltage V
DD
(V)
Turn-Off Fall Time t
f
(ns)
051015 20 25
0
20
40
60
80
100
Topr = 25°C
VIN = 5V
C = 1000pF
Operation Temperature Topr (°C)
t
D1
- Topr
Delay Time t
D1
(ns)
–50 –25 0 25 50 75 100 125 150
0
20
40
60
80
100
VDD = 15V
VIN = 5V
C = 1000pF
t
D1
- V
DD
Supply Voltage V
DD
(V)
Delay Time t
D1
(ns)
051015 20 25
0
20
40
60
80
100
Topr = 25°C
VIN = 5V
C = 1000pF
Operation Temperature Topr (°C)
Mar. 2006
MITSUBISHI SEMICONDUCTORS <LVIC>
M81716FP
GENERAL PURPOSE DRIVER
t
D2
- Topr
Operation Temperature Topr (°C)
Delay Time t
D2
(ns)
–50 –25 0 25 50 75 100 125 150
0
20
40
60
80
100
V
DD
= 15V
V
IN
= 5V
C = 1000pF
tD2 - VDD
Supply Voltage VDD (V)
Delay Time t
D2
(ns)
051015 20 25
0
20
40
60
80
100
Topr = 25°C
V
IN
= 5V
C = 1000pF
VIH - Topr
Operation Temperature Topr (°C)
High Level Input Threshold Voltage V
IH
(V)
–50 –25 0 25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
I
O
(+) - Topr
Operation Temperature Topr (°C)
Output High Level
Short Circuit Pulsed Current I
OH
(A)
–50 –25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.4
1.0
1.2
V
DD
= 15V V
DD
= 15V
–50 –25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.4
1.0
1.2
V
DD
= 15V
–50 –25 0 25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
V
DD
= 15V
VIL - Topr
Operation Temperature Topr (°C)
Low Level Input Threshold Voltage V
IL
(V)
I
O
(–) - Topr
Operation Temperature Topr (°C)
Output Low Level
Short Circuit Pulsed Current I
OL
(A)
Mar. 2006
PACKAGE OUTLINE
MITSUBISHI SEMICONDUCTORS <LVIC>
M81716FP
GENERAL PURPOSE DRIVER
SOP8-P-225-1.27
Weight(g)
–
JEDEC Code
0.07
EIAJ Package Code Lead Material
Cu Alloy
8P2S-A Plastic 8pin 225mil SOP
Symbol Min Nom Max
A
A2
b
c
D
E
H
E
L
L
1
y
b2
Dimension in Millimeters
A1
I2
0.05 – –
–1.5–
0.35 0.4 0.5
0.13 0.15 0.2
4.8 5.0 5.2
4.2 4.4 4.6
–1.27–
5.9 6.2 6.5
0.2 0.4 0.6
–0.9–
––0.1
0°–10°
–0.76–
–5.72–
1.27 – –
––1.9
e
e
1
85
41
H
E
E
D
ey
F
A
A
2
A
1
L
1
L
c
Detail F
eb
2
e
1
I
2
Recommended Mount Pad
z
Z1Detail G
x
–
–
Z1
–
0.595
–
–
–
0.745
0.25
z
b
xM
G
MMP
