2N903-2N991 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =| S| REPLACE- | PAGE Po ELT | Vee | Vor) = tee @ Ie v @) Bi i |S TRE 2/3] "ment | numper | USE ce NE 15 gf SN el 1B] oT alB =\|o @ 25C | SB) C | (volts) | (volts) |S | (min) (max) S| (volts) = 3 5\3 2nd03 |S ]N AFA | 150M [A ]175 | 45 | 300 To 5.0m | 18 | E] 2.0m 2N904 S|N AFA 150M |A [175 45 30 |0 1.0) 5.0M 18 E| 8,0M 2N905 S|N AFA L50M | A 1175 45 30 | 0 1.0) 5.0M 36 E] 2.0M 2N906 s)\N AFA 150M fA 7175 45 30 40 1.0) 5.0M 76 E} 2.0M 2n907 |S |N RFA ]0.i5W]a]175] 45 | 30/0] 20] 55] 10m 19 | E| iam {tT 2N908 S]N RFA {0.15W | A [175 45 30 |0 45 | 150 10M 39 E 25M | T 2N909 S|N 2N2222 8-108 | RFA 400M {A 1175 60 30 |R 1110 {350 50M 0.5 LOM 40 E 50M | T 2N910 S|N AFA 500M | A } 200 100 80 |R 75 10M 0.4 10M 76 E 60M | T 2nN911 |S | N AFA | 500M}A]200} 100 | 80/R | 35 10M 0.4| 10M} 36] E] SOM]T 2N912 S|N AFA 500M | A | 200 100. 80 |R 15 10M 0.4 10M 18 E 40M [T 2N914 Ss )]N 8-67 HSS 360M | A | 200 40 20 |R 30 | 120 10M 0.7} 200M 300M | T 2N914A |S] N HSS 360M | A {200 40 20 |R 30 | 120 10M 0.4) 200M 300M | T INIS TS TN 8-69 |REA | 360M TA [200 } 70 | 50 ]o 1 50 | 200 | 10K Top io} 50] Ef 250M |T 2N916 |S] N 8-71 | RFA} 360M]A 1200] 45 | 25]0] 50}200} 10M 0.5) lom} 50] E} 300M|T 2N916A |S | N RFA 360M | A | 200 45 25 10 50 | 200 10M 0.5 1oM 50 E] 300M | T 2n917 [Ss | N RFA | 200M ]a ]200 | 30] 15 ]0] 20{200} 3.0m 0.5] 3.0M 500M | T QINOL7TA TS [NN RFA 200M ,;A | 200 30 15 }0 20 | 200 3.0M 0.4 10M 600M | T 2N918 S|N 9-15 RFA 200M |A | 200 30 15 | 0 20 3.0M 0.4 10M 600M | T 2N919 SiN 2N834 8-54 HSS |0.36W |A | 200 25 15 |0 20 60 10M 6.2 10M 200M | T 2no20 |s|n | 2834 | 8-54 | uss |0.36w/a 200] 25 | 15 [0 | 40/220 | 10m 0.2| 10m 200M | T 2n921 |S|N} 2N834 | 8-54 | HSS ]0.36w]A }200} 50] 20]0] 20] 60] Iom 0.3, 10M 200M | T 2ng22 |s|w| 2ne34 | 8-54 | uss |o.36v /A f200{ 50] 20}0 | 40/120} 1om 0.3] 10M 200M | T 2N923 S|P AFA |0.25W | A | 200 40 25 10 0.5] 5.0M 12 E} 0.8M/B 2n924 \s|P AFA |0.25W Ja }200 | 40 | 25 Jo 0.5) 5.0m | 24) E) 0.8m |B 2N925 StP AFA J 0.25W |A | 200 50 40 |0 0.5} 5.0M 10 E! 0.8M 48 2N926 S|P AFA |0,.25W [A | 200 50 40 |0 0.5, 5.0M 20 E} 0.8M |B 2N927 5S j)P AFA |0.25W } A | 200 70 60 10 0.5) 5.0M 8.0 E) 0.8M )8 2N928 S|P AFA |0.25W |A | 200 70 60 | 0 0.5) 5.0M 18 E] 0.8M {B 2N929 S|N 8-72 AFA 600M |c | 175 45 45 |0 40 1120 10* 1.0) 10M 150 E] 1.0M{E 2N929A |S | N APA 0.5W A [200 60 45 |0 40 | 120 10* 0.5) 10M 60 E 45M LT 2N930 S|N 8-72 AFA 600M |C [175 45 45 |O ]100 | 300 10* 1.0 10M 150 Ef 1.0M /E 2N930A |S JN AFA 0.5W [A | 200 60 45 {0 1100 } 300 10* 0.5 10M 150 E 45M | T 2N934 G|P 2N965 8-74 HSS 150M |A 85 13 12 40 40M 0.3 40M 35M | T 2N935 S|F AFA ]0.25W |A } 160 50 40 )0 |9.0 22 0.3) 5.0M 2n936 [8 |P AFA |0.25W ja 160 | 50 | 35 Jo | i8 | 44 0.5| 5.0M 2n937 |s|P ara |0.25W }a [160] 56] 3070] 36] 88 0.6, 5.0M 2Nd38 |S]? AFA }0.25W |A ]1?5] 40 ) 35/0 0.3, 5.0m } 9.0 | E] 1.0M |B 2N939 S| P APA |0.25W |A [175 40 35 |O 0.3) 5.0M 18 E] 2.0M/B 2N940 S| P AFA |0.25W 1A 1175 40 35 |O 0.3) 5.0M 36 E}] 2.0M /B 2ngat |S |P cap |o.25w fa f1i75 | 25 atu | io 1L.0M 25 | El tem |r 2N942 SIP CHP | 0.25W |A [175 25 8 |U 10 1.0M 25 E 10M | T 2ng43 | | P cap |0.25w |a |175] 40] 18 ]o} 10 0.003 25] E} 1.0M 4B 2n944 |S] P cup |0:25w Ja [175 | 40 | 18/0 | 10 0.004 25 | E} 1.0m [8 2N945 S|P CHP | 0.25W 7A ]175 50 50 10 10 0.005 25 E] 1.0M 1B 2n946 |S | P cup }0.25w {a {175} 8a | 80/0 | 10 0.005 25 | E] 1.0m {B 2N947 S|N 2N834 8-54 MSA 360M | A [150 20 15 |R 20 10M 0.4) 5.0M 200M | T IN948 thru Thyristors, see Table on Page 1-154 2N951 2N955 G\N HSS 150M |A {100 12 8.0 10 30 30M 0.5 30M 2N955A [GIN HSS 150M |}A | 100 12 8.0 | 0 30 30M 0.3 30M ono56 |s|n {| 22222 | 8-108] RFA} soom]a |200 | 75 | 50 ]{R |100 |300 | 150M 1.5] 150m | 50] E| 7om/T 2n957 |S {Nn | 2N2501 | 8-148] RFA| 250M 1a (150 | 40 | 20/0 | 45 10M 1.5| Lo 200M |r 2N958 S|N HSS | 0.25W |c [150 25 15 |0 20 10M 0.2 10M 200M | T 2N959 S|{N HSS | 0.25W | C | 150 25 15 |0 40 10M 0.2 10M 200M | T 2N960 G/P 8-74 HSS 150M }A | 100 15 15 78 20 LOM 0.2 10M 300M ; T 2N961 G iP 8-74 HSS 150M }A | 100 12 12 )3s 20 LOM 0.2 10M 300M } T 2N962 GIP 8-74 HSS 150M | A {100 12 12/58 20 10M 0.2 10M 300M | T 2N963 G/P 8-76 HSS 150M | A | 100 12 12 |58 20 10M 0.2 10M 250M | T 2N964 G(P 8-74 HSS 150M LA | 100 15 15 |S 40 10M 0.18 10M 300M (T 2N964A 1G] P 8-79 | uss | 150m]a]}ioo/ 15] 157s | 40 tom | 0.18} 1oM 300M | T mn965 |G] P 8-74 | uss| i50m{a]ioo] 12] 12/8 | 40 rom | 0.18) 10M 300M | T 2N966 GIP 8-74 HSS 150M [A | 100 12 12'S 40 LOM 0.18 LOM 300M 4 T 2n967 |G|P 8-76 | uss} 150M]a ]|100] 12] 1218 | 40 10M 0.2) 10M 250M | T 2N968 GHP 8-85 HSs 150M JA | 100 15 i548 17 10M 0.25 10M 300M | T 2N969 GIP 8-85 HSS 150M |A | 100 12 12 |S 17 10M 0.25, 10M 300M | T 2N970 GaP 8-85 HSS 150M |A | 100 12 12 |s 17 10M 0.25 10M 300M | T 2N971 GI] P 8-85 HSS 150M {A | 100 7.0 7.018 17 10M 0.25 10M 300M |} T 2N972 G{P 8-85 HSS 150M {A {100 15 15/8 40 10M 0.25 10M 300M | T 2N973 GIP 8-85 HSS 150M |} A | 100 12 12's 40 1OoM 0.25 10M 300M | T 2N974 GIP 8-85 HSS 150M | A | 100 12 12 |S 40 10M 0.25 10M 300M | T 2N975 Gi P 8-85 HSs 150M | A | 100 7.0 7.018 40 10M 0.25) LOM 300M | T 2N976 [GC |P | 2Nd6h | 8-74 | HSS | 100M 1A {100 157 1010 | 30 som | 0.17 20m BoM tT 2n977 |c|p| 2n964 | 8-74 | uss] i50]A]100] 15] 10]0] 50 40M 0.2] 40M 400M | T 2n978 |S|P |} 2N2837 | 8-161] RFA} 330M]A [150] 30} 20/0] 15} 607} 150m 1.5] 150M 40M | T 2N979 GiP HSS 60M 7A | 100 20 15 |0 30 10M 0.25 LOM 100M | T 2N980 GI] P HSS 60M JA | 100 20 12 )0 30 10M 0.25 10M 100M | T 2N981L S|N AFA O.5W fA | 200 80 80 | 0 3.0) 10M 36 E 50M | B 2N982 GIP HSS 60M |A | 100 20 15 | 0 50 10M 0.125) 10M 2N983 |GIP uss | 60m ]a |100/ 15} 151401] 40 rom | 0.15| tom 2N984 G|P HSs 60M |A | 100 15 10 | 0 50 10M 0.18 LOM 2n985 |G|P s-sg | uss | 150mM}a]100} 15 | 7.0 }o | 40 lomM | 0.15) 10M 300m } 2N986 |S|N spp} 500M|a }200| 100] 801R 2N987 G|P RFA 0,1W JA | 100 40 40 |0 40 | 250 1.0M 40 E 2N988 SIN 2N2221 8-108 | RFA 0.3W }A [175 20 10 | 0 20 | 120 10M 0.5 10M 300M | T 2N989 S|N 2N2221 8-108 | RFA 0O.3W JA [175 20 10 |90 20 7120 10M 0.5 10M 300M | T 2N990 GiP RFC 67M LA 75 20 20 ;R 40 1.QM 40 E 44m | T 2N991 GiP RFC 67M A 75 20 20 |R 40 L.0M 40 E 44M 1, T 1-112WN XK \N CW KX \\ we WN WN Switching and General Purpose Transistors QUICK SELECTION GUIDE GERMANIUM HIGH-SPEED SWITCHING TRANSISTORS The following tables list germanium transistors recommended for high- speed switching applications. All are PNP devices. Preselection of devices for this applications category can be made by first selecting those devices that fill the voltage and current requirements (from Table below), then comparing the dynamic characteristics of the devices select- ed by consulting the subsequent table for a further narrowing of the field. Final device selection can then be made by consulting the complete data sheets. CURRENT versus VOLTAGE (PNP Germanium High-Speed Switching Transistors) AQ Q AANNRAARERN WW ~~ LN ~ ~ ~ AAAS WW BVceo MINIMUM OPTIMUM COLLECTOR CURRENT RANGE VOLTS 1 mA - 50 mA 10 mA - 100 mA 100 mA - 500 mA 2N705 2N711A 2N710 2N711B 2N711 2N960 2N968 2N961 2N969 2N962 5-9 2N970 2N963 2N971 2N964 2N972 2N964A 2N973 2N965 2N974 2N966 2N975 2N967 2N985 2N559 2N2635 2N1204 2N1204A 2N1494 10 - 15 2N1494A 2N2096 2N2099 2N2381 2N3883 16 - 20 2N2956 2N2097 2N2957 2N2100 2N2382 __ 2N1495 more than 2N2955 2N1496 21 SN XX DsD~?A AN WN ~~ 8-6 Switching and General Purpose Transistors GERMANIUM HIGH SPEED SWITCHING TRANSISTORS (continued) PNP GERMANIUM HIGH-SPEED SWITCHING TRANSISTORS (Dynamic Characteristics) 3 y Switching Times (max) Type Oo CE( sat) @ L/I Number 2 fp her @ Ig (max) cB ton Core ton and tore 6 (MHz)| (min/max) (mA) ( Volts) (mA) | (ns) | (ns) Test Conditions 2N705 A | 325| 25/ 10 0.3 10/1 | 75 | 200 | 1, =10 ma, 2N710 A| 325] 25/ 0.5 75 | 200 | 4p1 = 1 MAs Ipg = 0.25 mA 2N711 A] 300] 20/ 0.5 100 | 350 aN711A | B| 150/ 25/150 0.55 100 | 300 2n711B | B| 150| 30/150 0.45 100 | 300 2N960 B | 300] 20/ 0.4 50/5 | 50 | 85 2N961 B | 300] 20/ 0.4 | 50 | 85 2N962 B | 300] 20/ 0.4 50 | 100 2N963 B | 300] 20/~ 0.2 10/1 | 60 | 120 | 1,, =1.0 mA, I, = 1.25 mA 2N964 B| 300] 40/ 0. 35 50/5 | 50 | 85 | In, =1.0 mA, Ip, = 0.25 mA 2N964A B | 300] 40/ 0.28 50 | 85 2N965 B} 300] 40/ 0. 35 50 | 85 2N966 B] 300] 40/ 0. 35 ! 50 | 100 2N967 B} 300] 40/ 0.2 10/1 | 60 | 120 | Ij, =1mA, Igy = 1.25 mA 2N968 A} 250] 17/~ 0.25 75 | 150 | I, = 10 ma, 2N969 Al 250] 17/ Q. 25 75 | 150 | Fp = 2 As Tyg = 0-25 mA 2N970 A] 250] 17/ 0.25 100 | 275 2N9T7L A| 250] 17/~ 0,25 100 | 275 2N972 A| 250} 40/ 0. 25 25 | 175 2N973 A| 250] 40/ 0.25 78 | 175 2N974 a| 250] 40/ 0.25 100 | 275 2N975 A[ 250] 40/ 0.25 100 | 275 2N985 B} 300} 40/ 0, 15 Y 35 | 80 | In, =5 mA, Ip, = 1.25 mA 2ni204 | c} 120} 15/ 400 | 0.5 200/10) | aniz04a | cl 110] 25/ 200 | 0.5 | aniaga. | oc] 110] 15/ 400 | 0.4 | ani4o4a | c] 110] 25/ 200 | 0.4 y// ani4es | cl 150] 25/~ 200 | 0.3 200/20} | 2ni496 | C] 150] 25/ 400 | 0.3 { ~| WWII QMKWK)'/wiWmwWi MI i\WW:iwiw WWJ W'WW;'iry(cercrcirisW Switching and General Purpose Transistors 2n956 For Specifications, See 2N718A Data Sheet 2N960 (GERMANIUM) 2n961 2n962 2N962 USA/JAN 2N964 2N964 USA/JAN 2N965 Q 2N966 Vee = 12-15 V Ic = 100mA fr = 460 Mc PNP germanium epitaxial mesa transistors for high- \, speed switching applications. Collector connected to case CASE 22 (TO-18) MAXIMUM RATINGS oat 2N960 | 2N961 | 2N962 . c i Sym Characteristic ymbol 2N964 | 2N965 | 2N966 Unit Collector -Emitter Voltage Vor 15 12 12 Vde Collector -Base Voltage Vop 15 12 12 Vdc Emitter -Base Voltage Vip 2.5 2.0 1.25 Vde Total Device Dissipation @ Ty = 25C Py 150 mW Derate above 25C 2 mw/c Total Device Dissipation @ T, = 25C Py 300 mW Derate above 25C 4 mw/c Operating and Storage Junction T rst c Temperature Range 8 -65 to + 100 NORMALIZED DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT hee, NORMALIZED DC CURRENT TRANSFER RATIO 1 2 5 10 20 Ie, COLLECTOR CURRENT (mAdc) 50 100 fr, CURRENT GAIN-BANDWIDTH PRODUCT (MEGACYCLES} 8.74 CURRENT GAIN-BANDWIDTH PRODUCT (f-) versus COLLECTOR CURRENT 300 y 3 3 o 3 5 10 20 50 100 Je, COLLECTOR CURRENT (mAdc} Switching and General Purpose Transistors 2N960 SERIES (continued) COLLECTOR-EMITTER SATURATION VOLTAGE STORAGE TIME versus CIRCUIT RATIO versus AMBIENT TEMPERATURE 04 wm 2N964, 2N965, 2N966 =~ = 2N960, 2N961, 2N962 le lp = 10 0.3 100 mAdc 100 mAdc 50 mAdc 50 mAdc = 0.2 le = 10 made _ 10 mAdc _ OL t,, STORAGE TIME (NANOSECONDS) le = 2 mAdc 0 5 10 15 20 ~75 50 -25 9 +25 --50 +75 +100 le/lay CIRCUIT CURRENT RATIO Vee jut) COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) T,. AMBIENT TEMPERATURE (C) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol } Min} Typ | Max | Unit Collector-Base Breakdown Voltage BV apo Vdc (I, = 100 pAde, I, = 0) 2N960, 2N964 ~ 15 | 25 - 2N961, 2N962, 2N965, 2N966 12 20 - Emitter-Base Breakdown Voltage BVERO Vde (p, = 100 pAdc, lo = 0) 2N960, 2N964 2.5 - - 2N961, 2N965 2.0 - - 2N962, 2N966 1.25 - - Collector -Latch-up Voltage LVopx Vde Voc = 11.5 Vde All Types 11.5 - - Collector -Emitter Cutoff Current Io ES pAdc Vor = 15 Vdc) 2N960, 2N964 - - 100 (Vop = 12 Vde) 2N961 , 2N962, 2N965, 2N966 ~ - | 100 Collector-Base Cutoff Current Io BO pAdc Vor = 6 Vde, I, = 0) All Types - 0.4 3 DC Current Gain hep - (Ig = 10 mAdc, Vor = 0.3 Vdc) 2N960, 2N961, 2N962 20 40 - 2N964, 2N965, 2N966 40 | 70 - Ig = 50 mAdc, Vor = 1 Vdc) 2N960, 2N961, 2N962 20 55 - 2N964, 2N965, 2N966 40 90 - (Ig = 100 mAdc, Vz, = 1 Vde) 2N960, 2N961, 2N962 20 | 50 - 2N964, 2N965, 2N966 40 85 - Collector-Emitter Saturation Voltage Vor sat) Vde Io = 10 mAdc, Ib = 1 mAdc) 2N964, 2N965, 2N966 - 0.11 | 0.18 2N960, 2N961, 2N962 - 0.13 | 0.20 (Ip = 50 mAdc, Ip = 5 mAdc) 2N964, 2N965, 2N966 - 0.18 | 0.35 2N960, 2N961, 2N962 - 0. 20 | 0. 40 lo = 100 mAdc, I, = 10 mAdc) 2N964, 2N965, 2N966 - 0.27] 0.60 2N960, 2N961, 2N962 - 0.30] 0.70 Base-Emitter Saturation Voltage V5R(sat) Vdc (Ig = 10 mAdc, I, = 1 mAdc) All Types 0.30] 0.40] 0.50 Ig = 50 mAdc, Ip = 5 mAdc) All Types 0.40 | 0.55 | 0.75 Ta = 100 mAdc, I, = 10 mAdc) 2N960, 2N961, 2N964, 2N965 0.40] 0.65] 1.00 2N962, 2N966 0.40 | 0.75 | 1.25 Current-Gain Bandwidth Product All Types fp MHz (Ip = 20 mAde, Vop = 1.0 Vde, f = 100 MHz) , 300 | 460 - 8-75