MCD94-20io1B Thyristor Module VRRM = 2x 2000 V I TAV = 104 A VT = 1.46 V Phase leg Part number MCD94-20io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD94-20io1B Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 2100 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 2000 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 2000 V TVJ = 25C 200 A VR/D = 2000 V TVJ = 125C 15 mA I T = 150 A TVJ = 25C 1.44 V 1.74 V 1.46 V I T = 300 A TVJ = 125 C I T = 150 A I T = 300 A I TAV average forward current TC = 85C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It value for fusing 1.99 V T VJ = 125 C 104 A 180 A TVJ = 125 C 0.85 V 455 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.70 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.84 kA t = 10 ms; (50 Hz), sine TVJ = 125 C 1.45 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.56 kA t = 10 ms; (50 Hz), sine TVJ = 45C 14.5 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 14.0 kAs TVJ = 125 C 10.4 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 10.1 kAs 63 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 3.2 0.22 TVJ = 125C; f = 50 Hz repetitive, IT = 250 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.45 A/s; I G = 0.45 A; VD = VDRM non-repet., IT = 104 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA TVJ = 125 C 0.25 V 10 mA TVJ = 25 C 200 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s 1.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 150 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 150 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 185 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD94-20io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 200 Unit A -40 125 C -40 125 C Weight 90 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Ordering Standard Part Number MCD94-20io1B Equivalent Circuits for Simulation I V0 R0 2.5 4 Nm Nm 9.7 mm terminal to backside 16.0 16.0 mm 3600 V 3000 V Delivery Mode Box Quantity 6 Code No. 471259 T VJ = 125 C Thyristor V 0 max threshold voltage 0.85 R 0 max slope resistance * 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved * on die level 4 13.0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCD94-20io1B 2.5 terminal to terminal t = 1 second isolation voltage g V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD94-20io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD94-20io1B Thyristor 10 1000 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C TVJ = 25C typ. 100 VG 2 1 tgd 3 5 6 1 [V] Limit [s] 4 10 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 0.1 100 101 102 103 104 1 10 IG [mA] Fig. 1 Gate trigger characteristics IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 100 1000 IG [mA] Fig. 2 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a