2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
4
123
4
3
2
11. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 35 V
Collector to emitter voltage VCEO 35 V
Emitter to base voltage VEBO 5V
Collector current IC2.5 A
Collector peak current IC(peak) 3A
Collector power dissipation PC*118 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD2121(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 35 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 35 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 5——VI
E
= 1 mA, IC = 0
Collector cutoff current ICBO — — 20 µA VCB = 35 V, IE = 0
DC current transfer ratio hFE1*160 — 320 VCE = 2 V, IC = 0.5 A*2
hFE2 20 — — VCE = 2 V, IC = 1.5 A*2
Base to emitter voltage VBE — — 1.5 V VCE = 2 V, IC = 1.5 A*2
Collector to emitter saturation
voltage VCE(sat) — — 1.0 V IC = 2 A, IB = 0.2 A*2
Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows.
BCD
60 to 120 100 to 200 160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
10
1.0
3.0
Collector current IC (A)
0.3
0.11103 30 100
Collector to emitter voltage VCE (V)
Ta = 25°C
1 shot pulse
iC(peak)
IC(max)
1 ms
Area of Safe Operation
DC Operation
(T
C
= 25°C)
PW = 10 ms
2SD2121(L)/(S)
3
Ta = 25°C
IB = 0
2.0
1.6
1.2
0.8
0.4
0
Collector current IC (A)
1
Collector to emitter voltage VCE (V)
3254
Typical Output Characteristics
2 mA
4
10
12
14
16
6
8
1,000
300
30
100
10
0.03 0.1
DC current transfer ratio hFE
0.3
Collector current IC (A)
1.0 3.0
VCE = 2 V
Ta = 25°C
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
1.0
0.3
0.1
Collector to emitter saturation voltage VCE(sat) (V)
0.03
0.01
0.03 0.30.1 1.0 3.0
Collector current IC (A)
IC = 10 IB
Ta = 25°C
2.0
1.6
1.2
0.8
0.4
0
Collector current IC (A)
0.4
Base to emitter voltage VBE (V)
1.20.8 2.01.6
Typical Transfer Characteristics
VCE = 2 V
Ta = 25°C
2SD2121(L)/(S)
4
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
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examples described herein.
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