BUV26 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

May, 2002 – Rev. 0 1Publication Order Number:

BUV26/D

BUV26

Switchmode Series NPN

Silicon Power Transistor

Designed for high–speed applications such as:

•Switchmode Power Supplies

•High Frequency Converters

•Relay Drivers

•Driver

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO(sus) 90 Vdc

Collector–Base Voltage VCBO 180 Vdc

Emitter–Base Voltage VEBO 7.0 Vdc

Collector Current – Continuous

Collector Current – Peak (pw 10 ms) IC

ICM 20

30 Adc

Apk

Base Current – Continuous IB

IBM 4.0

6.0 Adc

Adc

Total Power Dissipation @ TC = 25°C

Total Power Dissipation @ TC = 60°CPD

PD85

65 Watts

Watts

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to

+150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Case RθJC 1.76 °C/W

Device Package Shipping

ORDERING INFORMATION

TBD TO–220

TO–220

CASE 221A

STYLE 1

50 Units/Rail

12 AMPERES

NPN SILICON

POWER TRANSISTORS

90 VOLTS

85 WATTS

MARKING DIAGRAM

Y = Year

WW = Work Week

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BUV26

YWW

BUV26

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus) 90 – Vdc

Collector Cutoff Current at Reverse Bias

(VCE = 180 V, VBE = –1.5 V, TC = 125°C) ICEX – 1.0 mAdc

Emitter Base Reverse Voltage

(IE = 50 mA) VEBO 7.0 30 V

Emitter Cutoff Current

(VEB = 5.0 V) IEBO – 1.0 mAdc

Collector Cutoff Current

(VCE = 180 V, RBE = 50 , TC = 125°C) ICER – 3.0 mAdc

ON CHARACTERISTICS

Collector–Emitter Saturation Voltage

(IC = 6.0 A, IB = 0.4 A)

(IC = 12 A, IB = 1.2 A)

VCE(sat) –

–0.6

1.5

Vdc

Base–Emitter Saturation Voltage

(IC = 12 A, IB = 1.2 A) VBE(sat) – 2.0 Vdc

SWITCHING CHARACTERISTICS (Resistive Load)

Turn On Time IC = 12 A, IB = 1.2 A ton – 0.6 s

Storage Time VCC = 50 V, VBE = 6.0 V ts– 1.0

Fall Time RB2 = 2.5 tf– 0.15

SWITCHING CHARACTERISTICS (Inductive Load)

Storage Time VCC = 50 V, IC = 12 A

IB( d) =12A V

B=50V

Ts– 2.0 s

Fall Time IB(end) = 1.2 A, VB = 5.0 V

LB = 0.5 pH, TJ = 125°CTf– .15

1. Pulse Test: Pulse width  300 s; Duty cycle  2%.

BUV26

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PACKAGE DIMENSIONS

TO–220

CASE 221A–07

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

–T– SEATING

PLANE

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

BUV26

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ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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For additional information, please contact your local

Sales Representative.

BUV26/D

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