BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high-speed applications such as: * * * * Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS 85 WATTS MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VCEO(sus) 90 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector Current - Continuous Collector Current - Peak (pw 10 ms) IC ICM 20 30 Adc Apk Base Current - Continuous IB IBM 4.0 6.0 Adc Adc Total Power Dissipation @ TC = 25C Total Power Dissipation @ TC = 60C PD PD 85 65 Watts Watts TJ, Tstg - 65 to +150 C Collector-Emitter Voltage Operating and Storage Junction Temperature Range 1 2 TO-220 CASE 221A STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.76 C/W 3 MARKING DIAGRAM BUV26 YWW Y = Year WW = Work Week ORDERING INFORMATION Device TBD Semiconductor Components Industries, LLC, 2002 May, 2002 - Rev. 0 1 Package Shipping TO-220 50 Units/Rail Publication Order Number: BUV26/D BUV26 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 90 - - 1.0 7.0 30 - 1.0 - 3.0 - - 0.6 1.5 - 2.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus) Collector Cutoff Current at Reverse Bias (VCE = 180 V, VBE = -1.5 V, TC = 125C) ICEX Emitter Base Reverse Voltage (IE = 50 mA) VEBO Emitter Cutoff Current (VEB = 5.0 V) IEBO Collector Cutoff Current (VCE = 180 V, RBE = 50 , TC = 125C) ICER Vdc mAdc V mAdc mAdc ON CHARACTERISTICS Collector-Emitter Saturation Voltage (IC = 6.0 A, IB = 0.4 A) (IC = 12 A, IB = 1.2 A) VCE(sat) Base-Emitter Saturation Voltage (IC = 12 A, IB = 1.2 A) VBE(sat) Vdc Vdc SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time IC = 12 A, IB = 1.2 A ton - 0.6 Storage Time VCC = 50 V, VBE = 6.0 V ts - 1.0 Fall Time RB2 = 2.5 tf - 0.15 Ts - 2.0 Tf - .15 s SWITCHING CHARACTERISTICS (Inductive Load) Storage Time Fall Time VCC = 50 V, IC = 12 A IB(end) 1 2 A, A VB = 5.0 50V B( d) = 1.2 LB = 0.5 pH, TJ = 125C 1. Pulse Test: Pulse width 300 s; Duty cycle 2%. http://onsemi.com 2 s BUV26 PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE AA -T- B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z L R V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 3 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BUV26 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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