MMBT2222AT — NPN Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 1
September 2008
MMBT2222AT
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
•General purpose switching & amplification application
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise note d
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RθJA 250 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V 10 nA
hFE DC Current Gain VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
35
50
75
100
VCE (sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1.0 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA, f = 100MHz 300 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8pF
Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 30 pF
tdDelay Time VCC = 30V, IC = 150mA
IB1 =- IB2 = 15mA 10 ns
trRise Time 25 ns
tsStorage Time 225 ns
tfFall Time 60 ns
SOT-523F
Marking : A02
B
C
E