© 2006 IXYS CORPORATION All rights reserved
DS99706 (11/06)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ100 V
VGSM Transient ± 30 V
ID25 TC= 25°C80A
IDM TC= 25°C, pulse width limited by TJM 220 A
IAR TC= 25°C25A
EAS TC= 25°C 400 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns
TJ≤ 175°C, RG = 15 Ω
PDTC= 25°C 230 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
Weight 3g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 100 V
VGS(th) VDS = VGS, ID = 100 μA 2.5 4.5 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5μA
VGS = 0 V TJ = 150°C 150 μA
RDS(on) VGS = 10 V, ID = 25 A, Note 1 11.5 14 mΩ
TrenchMVTM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA80N10T7 VDSS = 100 V
ID25 =80 A
RDS(on) ≤≤
≤≤
≤14 mΩΩ
ΩΩ
Ω
TO-263 (7-lead) (IXTA..7)
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
1
7
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA80N10T7
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 40 A, Note 1 33 55 S
Ciss 3040 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 420 pF
Crss 90 pF
td(on) Resistive Switching Times 31 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 54 ns
td(off) RG = 15 Ω (External) 40 ns
tf48 ns
Qg(on) 60 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 21 nC
Qgd 15 nC
RthJC 0.65°C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 80 A
ISM Pulse width limited by TJM 220 A
VSD IF = 25 A, VGS = 0 V, Note 1 1.1 V
trr IF = 25 A, -di/dt = 100 A/μs 100 ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA 7) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTA80N10T7
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
6V
7V
8V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. RDS(on) Normalized to ID = 40A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. RDS(on) Normalized to ID = 40A Value
vs. Drain Current
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - - T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA80N10T7
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
4 4.5 5 5.5 6 6.5 7 7.5 8
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2006 IXYS CORPORATION All rights reserved
IXTA80N10T7
IXYS REF: T_80N10T (3V) 6-21-06.xls
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
35
40
45
50
55
60
65
70
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 15Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
220
240
260
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
80
85
90
95
t
d ( o n )
- Nanoseconds
t r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V I
D
= 30A
I
D
= 10A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
39
40
41
42
43
44
45
46
47
48
49
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
36
40
44
48
52
56
60
64
68
72
76
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
=15Ω, V
GS
= 10V
V
DS
= 50V
I
D
= 10A
I
D
= 30A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
39
40
41
42
43
44
45
46
47
48
49
50
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f - Nanoseconds
30
34
38
42
46
50
54
58
62
66
70
74
78
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 15Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 15Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
50
60
70
80
90
100
110
120
130
140
150
160
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
30
50
70
90
110
130
150
170
190
210
230
250
270
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
