Vishay General Semiconductor
TGL41-6.8 thru TGL41-200A
Document Number 88403
05-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 % (200 W above 91 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical ID less than 1 µA above 10 V rating
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-213AB (GL41)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Blue band denotes the cathode which is
positive with respect to the anode under normal TVS
operation.
DO-213AB (GL41)
MAJOR RATINGS AND CHARACTERISTICS
VBR 6.8 V to 200 V
PPPM 400 W, 200 W
PD1.0 W
IFSM 40 A
Tj max. 150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 200 W above 91 V
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBO VALUE UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1) PPPM Minimum 400 W
Power dissipation on infinite heatsink at TL = 75 °C PD1.0 W
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3) IPPM see next table A
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2) I
FSM 40 A
Maximum instantaneous forward voltage at 25 A for unidirectional only VF 3.5 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
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Document Number 88403
05-Sep-06
Vishay General Semiconductor
TGL41-6.8 thru TGL41-200A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAG E
VBR (V) (1)
TEST
CURRENT
AT IT (mA)
STAND-
OFF
VOLTAG E
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAG E
AT IPPM VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR (%/°C)
MIN MAX
TGL41-6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.060
TGL41-6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.060
TGL41-7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.064
TGL41-7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.064
TGL41-8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.068
TGL41-8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.068
TGL41-9.1 8.19 10.0 1.0 7.37 50.0 29.0 13.8 0.071
TGL41-9.1A 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071
TGL41 -10 9.00 11.0 1.0 8.10 10.0 26.7 15.0 0.076
TGL41 -10A 9.50 10.5 1.0 8.55 10.0 27.6 14.5 0.076
TGL41 -11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.078
TGL41 -11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078
TGL41-12 10.8 13.2 1.0 9.72 5.0 23.1 17.3 0.081
TGL41-12A 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081
TGL41-13 11.7 14.3 1.0 10.5 5.0 21.1 19.0 0.084
TGL41-13A 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084
TGL41-15 13.5 16.5 1.0 12.1 5.0 18.2 22.0 0.087
TGL41-15A 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087
TGL41-16 14.4 17.6 1.0 12.9 5.0 17.0 23.5 0.089
TGL41-16A 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089
TGL41-18 16.2 19.8 1.0 14.5 5.0 15.1 26.5 0.091
TGL41-18A 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091
TGL41-20 18.0 22.0 1.0 16.2 5.0 13.7 29.1 0.093
TGL41-20A 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093
TGL41-22 19.8 24.2 1.0 17.8 5.0 12.5 31.9 0.095
TGL41-22A 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095
TGL41-24 21.6 26.4 1.0 19.4 5.0 11.5 34.7 0.097
TGL41-24A 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097
TGL41-27 24.3 29.7 1.0 21.8 5.0 10.2 39.1 0.099
TGL41-27A 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099
TGL41-30 27.0 33.0 1.0 24.3 5.0 9.2 43.5 0.100
TGL41-30A 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100
TGL41-33 29.7 36.3 1.0 26.8 5.0 8.4 47.7 0.101
TGL41-33A 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101
TGL41-36 32.4 39.6 1.0 29.1 5.0 7.7 52.0 0.102
TGL41-36A 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102
TGL41-39 35.1 42.9 1.0 31.6 5.0 7.1 56.4 0.103
TGL41-39A 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103
TGL41-43 38.7 47.3 1.0 34.8 5.0 6.5 61.9 0.104
TGL41-43A 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104
TGL41-47 42.3 51.7 1.0 38.1 5.0 5.9 67.8 0.104
TGL41-47A 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104
Document Number 88403
05-Sep-06
www.vishay.com
3
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
Note:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
TGL41-51 45.9 56.1 1.0 41.3 5.0 5.4 73.5 0.105
TGL41-51A 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105
TGL41-56 50.4 61.6 1.0 45.4 5.0 5.0 80.5 0.106
TGL41-56A 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106
TGL41-62 55.8 68.2 1.0 50.2 5.0 4.5 89.0 0.107
TGL41-62A 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107
TGL41-68 61.2 74.8 1.0 55.1 5.0 4.1 98.0 0.107
TGL41-68A 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107
TGL41-75 67.5 82.5 1.0 60.7 5.0 3.7 108 0.108
TGL41-75A 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108
TGL41-82 73.8 90.2 1.0 66.4 5.0 3.4 118 0.108
TGL41-82A 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108
TGL41-91 81.9 100 1.0 73.7 5.0 3.1 131 0.109
TGL41-91A 86.5 95.5 1.0 77.8 5.0 3.2 125 0.109
TGL41-100 90.0 110 1.0 81.0 5.0 1.39 144 0.109
TGL41-100A 95.0 105 1.0 85.5 5.0 1.46 137 0.109
TGL41-110 99.0 121 1.0 89.2 5.0 1.27 158 0.110
TGL41-110A 105 116 1.0 94.0 5.0 1.32 152 0.110
TGL41-120 108 132 1.0 97.2 5.0 1.16 173 0.110
TGL41-120A 114 126 1.0 102 5.0 1.21 165 0.110
TGL41-130 117 143 1.0 105 5.0 1.07 187 0.110
TGL41-130A 124 137 1.0 111 5.0 1.12 179 0.110
TGL41-150 135 165 1.0 121 5.0 0.93 215 0.111
TGL41-150A 143 158 1.0 128 5.0 0.97 207 0.111
TGL41-160 144 176 1.0 130 5.0 0.87 230 0.111
TGL41-160A 152 168 1.0 136 5.0 0.91 219 0.111
TGL41-170 153 187 1.0 138 5.0 0.82 244 0.111
TGL41-170A 162 179 1.0 145 5.0 0.85 234 0.111
TGL41-180 162 198 1.0 146 5.0 0.78 258 0.111
TGL41-180A 171 189 1.0 154 5.0 0.81 246 0.111
TGL41-200 180 220 1.0 162 5.0 0.70 287 0.111
TGL41-200A 190 210 1.0 171 5.0 0.73 274 0.111
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAG E
VBR (V) (1)
TEST
CURRENT
AT IT (mA)
STAND-
OFF
VOLTAG E
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAG E
AT IPPM VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR (%/°C)
MIN MAX
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TGL41-6.8A-E3/96 0.134 96 1500 7" Diameter Plastic Tape & Reel
TGL41-6.8A-E3/97 0.134 97 5000 13" Diameter Plastic Tape & Reel
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Document Number 88403
05-Sep-06
Vishay General Semiconductor
TGL41-6.8 thru TGL41-200A
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 3. Pulse Waveform
0.1
1.0
10
100
TGL41-6.8TGL91A
TGL41-100 TGL200A
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0 25 50 75 100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0
50
100
150
td
0 1.0 2.0 3.0 4.0
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
tr = 10 µsec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 µsec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
Figure 4. Typical Junction Capacitance
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
Unidirectional Only
1.0 10 100 200
10
100
1000
10000
Unidirectional
C
J
- Junction Capacitance (pF)
V
(BR)
- Breakdown Voltage (V)
Tj = 25 °C
f = 1.0 MHz
Vsq = 50 mVp-p
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
050 100 150 200
0
0.25
0.50
0.75
1.00
25 75 125 175
T
L
, Lead Temperature (°C)
P
D
, Power Dissipation (W)
110 100
0
20
40
10
30
50
T
j
= T
j
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Vishay General Semiconductor
TGL41-6.8 thru TGL41-200A
Document Number 88403
05-Sep-06
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D1 =
0.105
0.095
(2.67)
(2.41)
0.205 (5.2)
0.185 (4.7)
+ 0
- 0.008 (0.20)
D2
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
DO-213AB (GL41)
SOLDERABLE ENDS
1st Band D2 = D1
1st band denotes type and positive end (cathode)
0.138 MAX
(3.5) MAX
0.049 MIN
(1.25) MIN
0.118 MIN
(3.0) MIN
0.238 (6.0)
REF
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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