DS30422 Rev. 1 - 2 1 of 6 DCX (xxxx) H
www.diodes.com ã Diodes Incorporated
·Epitaxial Planar Die Construction
·Built-In Biasing Resistors
·Lead-Free Device
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
VIN
-10 to +40
-10 to +40
-10 to +30
-6 to +40
-5 to +12
-10 to +40
-5 Vmax
-5 Vmax
V
Output Current DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
IO
30
30
100
70
100
50
100
100
mA
Output Current All IC (Max) 100 mA
Power Dissipation (Total) Pd150 mW
Thermal Resistance, Junction to Ambient Air (Note 2) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings NPN Section @ TA= 25°C unless otherwise specified
A
M
L
BC
H
K
G
D
CXXYM
Mechanical Data
·Case: SOT-563, Molded Plastic
·Case material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Finish - Matte Tin Solderable
per MIL-STD-202, Method 208 (Note 1)
·Terminal Connections: See Diagram
·Weight: 0.005 grams (approx.)
TCUDORPWEN
P/N R1 R2 MARKING
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
22KW
47KW
4.7KW
10KW
2.2KW
10KW
4.7KW
10KW
22KW
47KW
4.7KW
47KW
47KW
10KW
-
-
C17
C20
C08
C14
C06
C13
C07
C12
R1
R1
R2
R2R1
R1
R1, R2R1 Only
DCX (xxxx) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-563 DUAL SURFACE MOUNT TRANSISTOR
SOT-563
Dim Min Max Typ
A0.15 0.30 0.25
B1.10 1.25 1.20
C1.55 1.70 1.60
D0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
K0.56 0.60 0.60
L0.15 0.25 0.20
M0.10 0.18 0.11
All Dimensions in mm
Note: 1. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability
and minimum order details.
2. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
SCHEMATIC DIAGRAM, TOP VIEW
SPICE MODELS: DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH
DS30422 Rev. 1 - 2 2 of 6 DCX (xxxx) H
www.diodes.com
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(off)
0.5
0.5
0.5
0.3
0.5
0.5
1.1
1.1
1.1
¾
¾
1.1
¾
V
VCC = 5V, IO = 100mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(on) ¾
1.9
1.9
1.9
--
--
1.9
3.0
3.0
3.0
1.4
1.1
3.0
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 2mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 1mA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 10mA
Output Voltage
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
VO(on) ¾0.1 0.3 V
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
Input Current
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Il¾¾
0.36
0.18
1.8
0.88
3.6
0.88
mA VI = 5V
Output Current IO(off) ¾¾0.5 mAVCC = 50V, VI = 0V
DC Current Gain
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Gl
56
68
20
68
80
30
¾¾¾
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
Electrical Characteristics NPN Section @ TA= 25°C unless otherwise specified
TCUDORPWEN
* Transistor - For Reference Only
Characteristic (DDC143TH & DDC114TH only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 50 ¾¾ VIC = 50mA
Collector-Emitter Breakdown Voltage BVCEO 50 ¾¾ VIC = 1mA
Emitter-Base Breakdown Voltage BVEBO 5¾-- VIE = 50mA
Collector Cutoff Current ICBO ¾¾0.5 mAVCB = 50V
Emitter Cutoff Current IEBO ¾¾0.5 mAVEB = 4V
Collector-Emitter Saturation Voltage VCE(sat) ¾¾0.3 V IC/IB = 2.5mA / 0.25mA DCX143TH
IC/IB = 1mA / 0.1mA DCX114TH
DC Current Transfer Ratio hFE 100 250 600 ¾IC = 1mA, VCE = 5V
Gain-Bandwidth Product* fT¾250 ¾MHz VCE = 10V, IE = -5mA, f = 100MHz
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
VIN
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
V
Output Current DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
IO
-30
-30
-100
-70
-100
-50
-100
-100
mA
Output Current All IC (Max) -100 mA
Power Dissipation (Total) Pd150 mW
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings PNP Section @ TA= 25°C unless otherwise specified
DS30422 Rev. 1 - 2 3 of 6 DCX (xxxx) H
www.diodes.com
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(off)
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
-1.1
¾
¾
-1.1
¾
V
VCC = -5V, IO = -100mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(on) ¾
-1.9
-1.9
-1.9
¾
¾
-1.9
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
VO = -0.3V, IO = -5mA
VO = -0.3V, IO =- 2mA
VO = -0.3V, IO =- -20mA
VO = -0.3V, IO = -1mA
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -10mA
Output Voltage
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
VO(on) ¾-0.1 -0.3 V
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -5mA / -0.25mA
IO/Il = -5mA / -0.25mA
IO/Il = -10mA /- 0.5mA
Input Current
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Il¾¾
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
mA VI = -5V
Output Current IO(off) ¾¾-0.5 mAVCC = 50V, VI = 0V
DC Current Gain
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Gl
56
68
20
68
80
30
¾¾¾
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -5mA
Gain-Bandwidth Product* fT¾250 ¾MHz VCE = -10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
Characteristic (DCX143TH & DCX114TH only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -50 ¾¾ VIC = -50mA
Collector-Emitter Breakdown Voltage BVCEO -50 ¾¾ VIC = -1mA
Emitter-Base Breakdown Voltage BVEBO -5 ¾¾ VIE = -50mA
Collector Cutoff Current ICBO ¾¾-0.5 mAVCB = -50V
Emitter Cutoff Current IEBO ¾¾-0.5 mAVEB = -4V
Collector-Emitter Saturation Voltage VCE(sat) ¾¾-0.3 V IC/IB = 2.5mA / 0.25mA DCX143TH
IC/IB = 1mA / 0.1mA DCX114TH
DC Current Transfer Ratio hFE 100 250 600 ¾IC = -1mA, VCE = -5V
Gain-Bandwidth Product* fT¾250 ¾MHz VCE = -10V, IE = 5mA, f = 100MHz
@ TA= 25°C unless otherwise specified
Electrical Characteristics PNP Section
TCUDORPWEN
DS30422 Rev. 1 - 2 4 of 6 DCX (xxxx) H
www.diodes.com
TCUDORPWEN
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
DCX124EH-7 SOT-563 3000/Tape & Reel
DCX144EH-7 SOT-563 3000/Tape & Reel
DCX143EH-7 SOT-563 3000/Tape & Reel
DCX114YH-7 SOT-563 3000/Tape & Reel
DCX123JH-7 SOT-563 3000/Tape & Reel
DCX114EH-7 SOT-563 3000/Tape & Reel
DCX143TH-7 SOT-563 3000/Tape & Reel
DCX114TH-7 SOT-563 3000/Tape & Reel
Ordering Information (Note 3)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 2003 2004 2005 2006 2007 2008 2009
Code PRS T UVW
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
CXXYM
Marking Information
Date Code Key
DS30422 Rev. 1 - 2 5 of 6 DCX (xxxx) H
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TCUDORPWEN
1
1
10
01020304050
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 6 Input Volta
g
e vs. Collector Current
V = 0.2
O
V , INPUT VOLTAGE (V)
in
-25°C
25°C
75°C
0.01
0.1
1
10
100
01 2 3 4 89
10
I , COLLECTOR CURRENT (mA)
C
V , INPUT VOLTAGE (V)
in
Fi
g
. 5 Collector Current Vs. Input Volta
g
e
75°C
-25°C
567
25°C
0
1
2
3
4
020 30
C
,
C
APA
C
ITAN
C
E
(
pF
)
OB
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 4 Output Capacitance
5
10
515 25
I=0mA
E
10
1000
100
1
1 10 100
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3 DC CURRENT GAIN
V = 10
CE
75°C
-25°C
25°C
0.001
0.01
0.1
1
010 20 30 40 50
V , MAXIMUM COLLECTOR VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 V vs. I
CE
(
SAT
)
C
I/I =10
CB
-25°C
75°C
25°C
-50 0 50 100 150
2
5
0
200
150
50
100
0
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1 Deratin
g
Curve - Total
P , POWER DISSIPATION (mW)
d
TYPICAL CURVES - DCX143EH NPN SECTION
DS30422 Rev. 1 - 2 6 of 6 DCX (xxxx) H
www.diodes.com
TCUDORPWEN
TYPICAL CURVES - DCX143EH PNP SECTION
1
1
10
01020304050
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 11 Input Volta
g
e vs. Collector Current
V = 0.2
O
V , INPUT VOLTAGE (V)
in
-25°C
25°C
75°C
0.01
0.1
1
10
100
01 2 3 4 89
10
I , COLLECTOR CURRENT (mA)
C
V , INPUT VOLTAGE (V)
in
Fi
g
. 10 Collector Current Vs. Input Volta
g
e
75°C
-25°C
567
25°C
V = 5V
O
0
2
4
6
10
020 30
C
,
C
APA
C
ITAN
C
E
(
pF
)
OB
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 9 Output Capacitance
12
10
515 25
8
I=0mA
E
10
1000
100
1
1 10 100
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 8 DC Current Gain
V = 10
CE
75°C
-25°C
25°C
0.001
0.01
0.1
1
010 20 30 40 50
V , MAXIMUM COLLECTOR VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Fig. 7 V vs. I
CE
(
SAT
)
C
I/I =10
CB
-25°C
75°C
25°C
