Vishay Siliconix
DG444, DG445
Document Number: 70054
S11-0984-Rev. G, 23-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Quad SPST CMOS Analog Switches
APPLICATIONS
• Audio switching
• Battery powered systems
• Data acquisition
• Sample-and-hold circuits
• Telecommunication systems
• Automatic test equipment
• Single supply circuits
• Hard disk drives
DESCRIPTION
The DG444, DG445 monolithic quad analog switches are
designed to provide high speed, low error switching of analog
signals. The DG444 has a normally closed function. The
DG445 has a normally open function. Combining low power
(22 nW, typ) with high speed (tON: 120 ns, typ.), the DG444,
DG445 are ideally suited for upgrading DG211, DG212
sockets. Charge injection has been minimized on the drain
for use in sample-and-hold circuits.
To achieve high-voltage ratings and superior switching
performance, the DG444, DG445 are built on Vishay
Siliconix’s high-voltage silicon-gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
FEATURES
• Low on-resistance: 50
• Low leakage: 80 pA
• Low power consumption: 22 nW
• Fast switching action - tON: 120 ns
• Low charge injection
• DG211, DG212 upgrades
• TTL/CMOS logic compatible
BENEFITS
• Low signal errors and distortion
• Reduced power supply requirements
• Faster throughput
• Improved reliability
• Reduced pedestal errors
• Simple interfacing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
Dual-In-Line and SOIC
IN1IN2
D1D2
S1S2
V- V+
GND VL
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
Top View
9
DG444
TRUTH TABLE
Logic DG444 DG445
0 On Off
1OffOn
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85 °C
16-pin plastic DIP DG444DJ
DG445DJ
16-pin narrow SOIC DG444DY
DG445DY
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Document Number: 70054
S11-0984-Rev. G, 23-May-11
Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75°C.
d. Derate 8 mW/°C above 75°C.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Limit Unit
V+ to V- 44
V
GND to V- 25
VL(GND - 0.3) to (V+) + 0.3
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) 30 mA
Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle ) 100
Storage Temperature - 65 to 125 °C
Power Dissipation (Package)b 16-Pin Plastic DIPc450
mW
16-Pin Narrow Body SOICd640
SPECIFICATIONS for Dual Supplies
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 VeTemp.a
D Suffix
- 40 °C °C to 85 °C
Unit Min.b Typ.cMax.b
Analog Switch
Analog Signal RangedVANALOG Full - 15 15 V
Drain-Source
On-Resistance RDS(on)
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V V- = - 13.5 V
Room
Full
50 85
100
Switch Off Leakage Current
IS(off) V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
Room
Full
- 0.5
- 5
± 0.01 0.5
5
nA
ID(off) Room
Full
- 0.5
- 5
± 0.01 0.5
5
Channel On Leakage Current ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
- 0.5
- 10
± 0.08 0.5
10
Digital Control
Input Current VIN Low IIL
VIN under test = 0.8 V
All Other = 2.4 V Full - 500 - 0.01 500
nA
Input Current VIN High IIH
VIN under test = 2.4 V
All Other = 0.8 V Full - 500 0.01 500
Dynamic Characteristics
Tur n - O n T i m e tON RL = 1 k, CL = 35 pF
VS = ± 10 V, See Figure 2
Room 120 250
ns
Turn-Off Time tOFF
DG444 Room 110 140
DG445 Room 160 210
Charge InjectioneQCL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Room - 1 pC
Off IsolationeOIRR RL = 50 , CL = 5 pF, f =1 MHz Room 60 dB
Crosstalk (Channel-to-Channel) dXTA L K Room 100
Source Off Capacitance CS(off) f = 1 MHz Room 4pF
Drain Off Capacitance CD(off) Room 4
Channel On Capacitance CD(on) VANALOG = 0 V Room 16
Document Number: 70054
S11-0984-Rev. G, 23-May-11
www.vishay.com
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Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS for Dual Supplies
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 VeTemp.a
D Suffix
- 40 °C °C to 85 °C
Unit Min.b Typ.cMax.b
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Room
Full
0.001 1
5
µA
Negative Supply Current I- Room
Full
- 1
- 5
- 0.0001
Logic Supply Current ILRoom
Full 0.001 1
5
Ground Current IGND Room
Full
- 1
- 5 - 0.001
SPECIFICATIONS for Unipolar Supplies
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 VeTemp.a
Limits
- 40 °C °C to 85 °C
Unit Min.b Typ.cMax.b
Analog Switch
Analog Signal RangedVANALOG Full 0 12 V
Drain-Source
On-ResistancedRDS(on)
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V, VL = 5.25 V
Room
Full
100 160
200
Dynamic Characteristics
Tu r n - O n T im e tON RL = 1 k, CL = 35 pF, VS = 8 V
See Figure 2
Room 300 450 ns
Turn-Off Time tOFF Room 60 200
Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 2 pC
Power Supplies
Positive Supply Current I+ V+ = 13.2 V, VIN = 0 or 5 V Room
Full
0.001 1
5
µA
Negative Supply Current I- VIN = 0 or 5 V Room
Full
- 1
- 5
- 0.0001
Logic Supply Current ILVL = 5.25 V, VIN = 0 or 5 V Room
Full
0.001 1
5
Ground Current IGND VIN = 0 or 5 V Full - 1
- 5
- 0.001
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Document Number: 70054
S11-0984-Rev. G, 23-May-11
Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
RDS(on) vs. VD and Temperature
Charge Injection vs. Source Voltage
Source/Drain Leakage Currents
R
DS(on)
- Drain-Source On-Resistance ()
V
D
- Drain Voltage (V)
150 - 15
0
20
50
30
70
80
40
60
10
25 °C
85 °C
- 40 °C
0 °C
V+ = 15 V
V- = - 15 V
- 10 - 5 5 1 0
Q (pC)
VS - Source Voltage (V)
10 0 - 10
- 30
- 10
20
0
40
50
10
30
- 20
- 5 5
C
L
= 1 nF
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
(pA)I , I
SD
VD or VS - Drain or Source Voltage (V)
15 0 - 15
- 100
- 80
- 40
- 20
- 60
0
20
- 10 - 5 5 1 0
I
S( of f)
, I
D(of f)
I
D(on)
V+ = 15 V
V- = - 15 V
For I
(of f )
, V
D = - VS
Crosstak and Off Isolation vs. Frequency
Switching Threshold vs. Supply Voltage
Source/Drain Leakage Currents
(Single 12-V Supply)
(dB)
f - Frequency (Hz)
0
- 20
- 40
- 80
- 100
- 60
- 120
- 140
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
Of f Isolation
Crosstalk
1K 10K 100K 1M 10M 100
(V)
TH
V
VSUPPLY (V)
048121620
0
3
2
1
4
VL = 7 V
VL = 5 V
(pA)I , I
SD
V
D
or V
S
- Drain or Source Voltage (V)
12 6 0
- 40
- 30
- 10
- 20
0
10
V+ = 12 V
V- = 0 V
For I
D
, V
S
= 0 V
For I
S
, V
D
= 0 V
I
S( of f)
, I
D(of f)
I
S(on)
+ I
D(on)
24 8 1 0
Document Number: 70054
S11-0984-Rev. G, 23-May-11
www.vishay.com
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Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Switching Time vs. Power Supply Voltage
Supply Current vs. Temperature
V - SUPPL Y
(V)
t (ns)
± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22
160
140
120
20
80
60
40
100
t
OFF
t
ON t
OFF
t
ON
DG444
DG445
, I-, I+, II
L GND
Temperature (°C)
100 mA
100 nA
100 50 0 - 55 125
I+, I
GND
-(I-)
I
L
10 mA
1 mA
10 nA
1 nA
- 25 25 75
100 pA
10 pA
1 pA
Switching Times vs. Power Supply Voltage
Source/Drain Capacitance vs. Analog Voltage
V+ - Positive Supply (V)
t (ns)
500
400
0
8 22
200
100
300
10 12 14 16 18 20
t
ON
t
OFF
t
ON
V- = 0 V
V
L
= 5 V
t
OFF
DG444
DG445
Switching Time vs. Input Voltage
Input Voltage (V)
t (ns)
160
140
120
20
100
80
60
40
V+ = 15 V
V- = - 15 V
tON
tON
tOFF
DG444
DG445
234 5
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Document Number: 70054
S11-0984-Rev. G, 23-May-11
Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SCHEMATIC DIAGRAM Typical Channel
TEST CIRCUITS
Figure 1.
Level
Shift/
Drive
VIN
VL
S
V+
GND
V-
D
V-
V+
Figure 2. Switching Time
0 V
Logic
Input
Switch
Input
Switch
Output
3 V
50 %
0 V
VO
VS
tr < 20 ns
tf < 20 ns
tOFF
tON
Note: Logic input waveform is inverted for DG445.
50 %
80 % 80 %
± 10 V
CL (includes fixture and stray capacitance)
V-
VL
IN
SD
3 V
RL
1 k
CL
35 pF
VO
- 15 V
GND
+ 5 V
V+
+ 15 V
Figure 3. Charge Injection
OFFONOFF
OFFONOFF
VO
VO
INX
INX
Q = VO x CL
(DG444)
(DG445)
CL
1 nF
IN
DVO
V-
V+
S
3 V
Vg
Rg
- 15 V
GND
+ 15 V
VL
+ 5 V
Document Number: 70054
S11-0984-Rev. G, 23-May-11
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Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
APPLICATIONS
Figure 4. Crosstalk
C = 1 mF tantalum in parallel with 0.01 mF ceramic
50
D1
VO
Rg = 50
S1
+ 15 V
- 15 V
D2
GND
V+
V-
NC
C
C
S2
RL
IN1
XTA L K Isolation = 20 log VS
VO
0 V, 2.4 V
0 V, 2.4 V
VS
IN2
C = RF bypass
VL
+ 5 V
Figure 5. Off Isolation
S
IN RL
D
Rg = 50
VS
VO
0 V, 2.4 V
Off Isolation = 20 log
VS
VO
V+
- 15 V
GND V- C
+ 15 V C
+ 5 V
VL
Figure 6. Source/Drain Capacitances
S
D
f = 1 MHz
IN
- 15 V
GND V- C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
V+
+ 15 V C
+ 5 V
VL
Figure 7. Level Shifter
+ 15 V
+ 15 V
+ 15 V
+ 5 V
0 V
0 V
+ 5 V
V+
V-GND
VIN
10 k
VL
VOUT
1
/
4
DG444
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Document Number: 70054
S11-0984-Rev. G, 23-May-11
Vishay Siliconix
DG444, DG445
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70054.
Figure 8. Precision-Weighted Resistor Programmable-Gain Amplifier
+ 5 V
- 15 V
V- GND
DG444 or DG445
+
-
VIN VOUT
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit
accuracy of circuit.
GAIN1
AV = 1
GAIN2
AV = 10
GAIN3
AV = 20
GAIN4
AV = 100
R1
90 k
R2
5 k
R3
4 k
R4
1 k
VOUT
VIN
=R1 + R2 + R3 + R4
R4
= 100
With SW4 Closed:
+ 15 V
VLV+
Figure 9. Precision Sample-and-Hold
- 15 V
+ 15 V
+ 15 V
- 15 V
30 pF
GND
DG444
J202
J500 J507
+ 15 V
2N4400
+
-
Logic Input
Low = Sample
High = Hold
R1
200 k
C2
1000 pF
C1
50 pF
VIN
VOUT
V1
5 M
5.1 MV2
+ 5 V
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
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Revision: 12-Mar-12 1Document Number: 91000
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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