2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 FEATURES BENEFITS APPLICATIONS D D D D D D D Minimum Parasitics Ensuring Maximum High-Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB DESCRIPTION The 2N5911/5912 are matched pairs of JFETs mounted in a TO-78 package. This two-chip design reduces parasitics and gives better performance at high frequencies while ensuring extremely tight matching. For similar products see the SO-8 packaged SST440/SST441, the TO-71 packaged U440/U441, the low-noise SST/U401 series, and the low-leakage U421/423 data sheets. The hermetically-sealed TO-78 package is available with full military screening per MIL-S-19500 (see Military Information). TO-78 S1 G2 1 D1 7 2 D2 6 3 5 G1 4 S2 Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 367 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 3 mW/_C above 25_C b. Derate 4 mW/_C above 25_C For applications information see AN102. Document Number: 70255 S-04031--Rev. D, 04-Jun-01 www.vishay.com 8-1 2N5911/5912 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5911 2N5912 Symbol Test Conditions Typa V(BR)GSS IG = -1 mA, VDS = 0 V -35 -25 VGS(off) VDS = 10 V, ID = 1 nA -3.5 -1 -5 -1 -5 Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 15 7 40 7 40 mA -100 -100 pA IGSS VGS = -15 V, VDS = 0 V -1 Gate Reverse Current -2 -250 -250 nA -1 -100 -100 pA -0.3 -100 -100 nA Parameter Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltagec IG TA = 150_C VDG = 10 V, ID = 5 mA TA = 125_C -25 V VGS VDG = 10 V, IG = 5 mA -1.5 VGS(F) IG = 1 mA, VDS = 0 V 0.7 -0.3 -4 -0.3 -4 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en Noise Figure NF 6 VDG = 10 V, ID = 5 mA f = 1 kHz 70 5.8 VDG = 10 V, ID = 5 mA f = 100 MHz VDG = 10 V, ID = 5 mA f = 1 MHz VDG = 10 V, ID = 5 mA f = 10 kHz RG = 100 kW 5 10 5 100 5 10 5 10 mS 100 mS 10 mS mS 90 150 150 3 5 5 1 1.2 1.2 4 20 20 nV Hz 0.1 1 1 dB pF Matching Differential Gate-Source Voltage |V GS1 - V GS2| VDG = 10 V, ID = 5 mA 4 10 15 mV Gate-Source Voltage Differential Change with Temperature D|V GS1 - V GS2| VDG = 10 V, ID = 5 mA TA = -55 to 125_C 15 20 40 mV/_C VDS = 10 V, VGS = 0 V 0.98 0.95 1 0.95 1 VDS = 10 V, ID = 5 mA f = 1 kHz 0.98 0.95 1 0.95 1 VDG = 10 V, ID = 5 mA, TA = 125_C 0.005 VDG = 5 to 10 V, ID = 5 mA 85 Saturation Drain Current Ratio Transconductance Ratio Differential Gate Current Common Mode Rejection Ratioc DT I DSS1 I DSS2 gfs1 gfs2 |I G1-I G2| CMRR Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. www.vishay.com 8-2 20 20 nA dB NZF Document Number: 70255 S-04031--Rev. D, 04-Jun-01 2N5911/5912 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IG(on) @ ID 16 12 30 20 8 gfs 10 4 IDSS 10 nA TA = 125_C I G - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 40 -4 -2 -6 -8 1 nA ID = 10 mA IGSS @ 125_C 100 pA 1 mA 1 mA 10 mA 10 pA TA = 25_C 1 pA 0 0 0 Gate Leakage Current 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 50 IGSS @ 25_C 0.1 pA -10 0 VGS(off) - Gate-Source Cutoff Voltage (V) 4 8 12 16 Output Characteristics 10 Output Characteristics 30 VGS(off) = -5 V VGS = 0 V VGS(off) = -2 V -0.5 V 8 24 6 I D - Drain Current (mA) VGS = 0 V I D - Drain Current (mA) 20 VDG - Drain-Gate Voltage (V) -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.0 V -1.5 V 18 -2.0 V 12 -2.5 V -3.0 V 6 -3.5 V -1.2 V 0 0 0 4 2 6 8 10 0 2 4 Output Characteristics 8 10 Output Characteristics 5 15 VGS = 0 V VGS(off) = -2 V VGS(off) = -5 V -0.2 V -0.4 V 3 -0.6 V 2 -0.8 V -1.0 V 1 VGS = 0 V 12 I D - Drain Current (mA) 4 I D - Drain Current (mA) 6 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) -0.5 V -1.0 V 9 -1.5 V -2.0 V 6 -2.5 V -3.0 V 3 -3.5 V -1.2 V 0 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) Document Number: 70255 S-04031--Rev. D, 04-Jun-01 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) www.vishay.com 8-3 2N5911/5912 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 10 30 VGS(off) = -2 V VDS = 10 V VGS(off) = -5 V 24 TA = -55_C 6 I D - Drain Current (mA) I D - Drain Current (mA) 8 25_C 4 125_C 2 TA = -55_C 25_C 18 125_C 12 6 0 0 0 -0.4 -0.8 -1.6 -1.2 -2 0 -1 VGS - Gate-Source Voltage (V) -4 -5 10 8 VDS = 10 V f = 1 kHz VGS(off) = -5 V gfs - Forward Transconductance (mS) VGS(off) = -2 V gfs - Forward Transconductance (mS) -3 Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage TA = -55_C 25_C 6 125_C 4 2 0 8 25_C TA = -55_C 6 125_C 4 2 VDS = 10 V f = 1 kHz 0 0 -0.4 -1.2 -0.8 -1.6 -2 0 Circuit Voltage Gain vs. Drain Current 50 rDS(on) - Drain-Source On-Resistance ( ) 40 VGS(off) = -2 V 30 VGS(off) = -5 V AV + g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 RL + -2 -4 -3 -5 On-Resistance vs. Drain Current 200 20 -1 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) A V - Voltage Gain -2 VGS - Gate-Source Voltage (V) 10 10 V ID 0 160 VGS(off) = -2 V 120 -5 V 80 40 TA = 25_C 0 0.1 1 ID - Drain Current (mA) www.vishay.com 8-4 VDS = 10 V 10 1 10 100 ID - Drain Current (mA) Document Number: 70255 S-04031--Rev. D, 04-Jun-01 2N5911/5912 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz C iss - Input Capacitance (pF) 8 6 VDS = 5 V 4 0V 2 10 V f = 1 MHz 4 3 VDS = 5 V 2 0V 1 10 V 0 0 0 -4 -8 -12 -16 -20 0 -4 -8 Input Admittance 10 TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA gig 10 -bfs -gfg big 1 -20 Forward Admittance bis (mS) -16 100 (mS) 100 -12 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 1 gfs bfg gis 0.1 0.1 100 200 500 1000 200 100 f - Frequency (MHz) 1000 f - Frequency (MHz) Reverse Admittance Output Admittance 100 10 TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA -brs 10 (mS) (mS) 1 500 -brg -grs 0.1 -grg bog, bos 1 grg gog, gos 0.1 0.01 100 200 500 f - Frequency (MHz) Document Number: 70255 S-04031--Rev. D, 04-Jun-01 1000 100 200 500 1000 f - Frequency (MHz) www.vishay.com 8-5 2N5911/5912 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 50 150 VGS(off) = -5 V 40 30 gos - Output Conductance (S) en - Noise Voltage nV / Hz VDS = 10 V ID = 1 mA 20 10 mA 10 TA = -55_C 90 25_C 60 30 0 10 100 1k 10 k 100 k 0.1 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 200 160 120 120 80 80 rDS 40 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 gfs - Forward Transconductance (mS) 10 gos - Output Conductance (S) 160 www.vishay.com 10 ID - Drain Current (mA) gos 0 1 f - Frequency (Hz) 200 rDS(on) - Drain-Source On-Resistance ( ) 120 125_C 0 8-6 VDS = 10 V f = 1 kHz VGS(off) = -5 V VDS = 10 V f = 1 kHz 8 TA = -55_C 6 25_C 4 125_C 2 0 0.1 1 10 ID - Drain Current (mA) Document Number: 70255 S-04031--Rev. D, 04-Jun-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1