BSS192,135 - NEXPERIA

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BSS192

240 V, P-channel vertical D-MOS transistor

12 December 2014 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-

MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device

(SMD) plastic package.

2. Features and benefits

•Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic

(TTL) devices

•Very fast switching

•No secondary breakdown

3. Applications

•Relay driver

•High-speed line driver

•High-side loadswitch

•Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - -240 V

VGS gate-source voltage

Tj = 25 °C

-20 - 20 V

IDdrain current VGS = -10 V; Tamb = 25 °C [1] - - -200 mA

Static characteristics

RDSon drain-source on-state

resistance

VGS = -10 V; ID = -200 mA; Tj = 25 °C - 10 12 Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm2.

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 2 / 15

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S source

2 D drain

3 G gate

3 2 1

SOT89

017aaa257

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BSS192 SOT89 plastic surface-mounted package; die pad for good heat transfer;

3 leads

SOT89

7. Marking

Table 4. Marking codes

Type number Marking code

BSS192 KB

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 3 / 15

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - -240 V

VGS gate-source voltage

Tj = 25 °C

-20 20 V

VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] - -340 mA

VGS = -10 V; Tamb = 25 °C [1] - -200 mA

IDdrain current

VGS = -10 V; Tamb = 100 °C [1] - -120 mA

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -800 mA

[2] - 560 mWTamb = 25 °C

[1] - 1 W

Ptot total power dissipation

Tsp = 25 °C - 12.5 W

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb = 25 °C [1] - -200 mA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 4 / 15

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Fig. 1. MOSFET transistor: Normalized total

power dissipation as a function of junction

temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Fig. 2. MOSFET transistor: Normalized continuous

drain current as a function of junction

temperature

aaa-014702

VDS (V)

-10-1 -103

-102

-1 -10

-10-1

-10-2

-1

(A)

-10-3

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 1 cm2

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 194 225 K/Win free air

[2] - 108 125 K/W

Rth(j-a) thermal resistance

from junction to

ambient

t ≤ 5 s [2] - 37 42 K/W

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 5 / 15

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance

from junction to solder

point

- 4 10 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

aaa-014703

tp(s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.05

0.1

0.2

0.25

0.33

0.5

0.75

0.02

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-014704

tp(s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

0.05

0.1

0.2 0.25

0.33

0.5

0.75

0.02

duty cycle = 1

FR4 PCB, mounting pad for drain 1 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage

ID = -10 µA; VGS = 0 V; Tj = 25 °C -240 - - V

VGSth gate-source threshold

voltage

ID = -1 mA; VDS = VGS; Tj = 25 °C -0.8 - -2.8 V

VDS = -200 V; VGS = 0.2 V; Tj = 25 °C - -0.1 -60 µAIDSS drain leakage current

VDS = -60 V; VGS = 0 V; Tj = 25 °C - - -200 nA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA

VGS = -10 V; ID = -200 mA; Tj = 25 °C - 10 12 Ω

VGS = -10 V; ID = -200 mA; Tj = 150 °C - 21 25 Ω

RDSon drain-source on-state

resistance

VGS = -4.5 V; ID = -100 mA; Tj = 25 °C - 13 18 Ω

gfs forward

transconductance

VDS = -10 V; ID = -200 mA; Tj = 25 °C - 200 - mS

Dynamic characteristics

QG(tot) total gate charge - 1.9 5 nC

QGS gate-source charge - 0.3 - nC

QGD gate-drain charge

VDS = -50 V; ID = -250 mA; VGS = -10 V;

Tj = 25 °C

- 0.6 - nC

Ciss input capacitance - 55 90 pF

Coss output capacitance - 20 30 pF

Crss reverse transfer

capacitance

VDS = -25 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 5 15 pF

td(on) turn-on delay time - 3.2 6 ns

trrise time - 4.6 6 ns

td(off) turn-off delay time - 11.7 20 ns

tffall time

VDS = -50 V; ID = -250 mA; VGS = -10 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 7 12 ns

Source-drain diode

VSD source-drain voltage IS = -200 mA; VGS = 0 V; Tj = 25 °C - 0.86 1.2 V

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 7 / 15

VDS (V)

0 -20-16-8 -12-4

aaa-014705

-0.4

-0.6

-0.2

-0.8

-1.0

(A)

-6 V

-5 V

VGS = -10 V

-4 V

-3 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-014706

VGS (V)

0 -3-2-1

-10-4

-10-5

-10-3

(A)

-10-6

maxtypmin

Tj = 25 °C; VDS = -10 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0 -1.0-0.8-0.4 -0.6-0.2

aaa-014707

RDSon

VGS = -10 V

-4 V

-5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0 -10-8-4 -6-2

aaa-014708

RDSon

(Ω)

Tj= 150 °C

Tj= 25 °C

ID = -200 mA

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 8 / 15

VGS (V)

0 -10-8-4 -6-2

aaa-014709

-0.4

-0.6

-0.2

-0.8

-1.0

(A)

Tj= 150 °C

Tj= 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

aaa-014710

1.0

1.5

0.5

2.0

2.5

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60 1801200 60

aaa-014711

-1.6

-0.8

-2.4

-3.2

VGS(th)

(V)

max

typ

min

ID = -1 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

VDS (V)

-10-1 -102

-10-1

aaa-014712

102

103

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 9 / 15

QG (nC)

0 21.50.5 1

aaa-014713

-4

-6

-2

-8

-10

VGS

(V)

ID = -0.25 A; VDS = -50 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. MOSFET transistor: Gate charge waveform

definitions

VSD (V)

0 -1.6-1.2-0.4 -0.8

aaa-014714

-0.4

-0.6

-0.2

-0.8

-1.0

(A)

Tj= 150 °C

Tj= 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

006aaa812

duty cycle δ =

Fig. 17. Duty cycle definition

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 10 / 15

12. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 06-03-16

06-08-29

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89

1 2 3

UNIT A

mm 1.6

1.4

0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

Fig. 18. Package outline SOT89

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 11 / 15

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot089_fr

1.2

1.9

2.25

4.75

(3×)

0.7

(3×)

0.6

(3×)

1.1

(2×)

1.2

0.85 0.2

0.5

1.7

4.85

3.95

4.6

1.51.5

Dimensions in mm

Fig. 19. Reflow soldering footprint for SOT89

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot089_fw

0.7

5.3

6.6

2.4

3.5

0.5

1.8

(2×)

1.5

(2×)

7.6

1.9 1.9

Dimensions in mm

Fig. 20. Wave soldering footprint for SOT89

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 12 / 15

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

BSS192 v.4 20141212 Product data sheet - BSS192 v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors

•Legal texts have been adapted to the new company name where appropriate

BSS192 v.3 20021120 - BSS192 v.2

BSS192 v.2 20020522 - BSS192 v.1

BSS192 v.1 19970620 -

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 13 / 15

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

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customer have explicitly agreed otherwise in writing. In no event however,

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is deemed to offer functions and qualities beyond those described in the

Product data sheet.

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Limited warranty and liability — Information in this document is believed

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limitation specifications and product descriptions, at any time and without

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

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Customers are responsible for the design and operation of their

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and the products or of the application or use by customer’s third party

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted

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NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 14 / 15

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

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the product is not suitable for automotive use. It is neither qualified nor

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NXP Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

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Translations — A non-English (translated) version of a document is for

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between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BSS192

240 V, P-channel vertical D-MOS transistor

Product data sheet 12 December 2014 15 / 15

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 6

11 Test information ..................................................... 9

12 Package outline ................................................... 10

13 Soldering .............................................................. 11

14 Revision history ................................................... 12

15 Legal information .................................................13

15.1 Data sheet status ............................................... 13

15.2 Definitions ...........................................................13

15.3 Disclaimers .........................................................13

15.4 Trademarks ........................................................ 14

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 December 2014