DATA SH EET
Product data sheet 2003 May 13
DISCRETE SEMICONDUCTORS
BAW101
High voltage double diode
M3D071
2003 May 13 2
NXP Semiconductors Product data sheet
High voltage double diode BAW101
FEATURES
•Small plastic SMD package
•High switching speed: max. 50 ns
•High continuou s reverse voltage: 300 V
•Electrically insulated diodes.
APPLICATIONS
•High voltage switching
•Automotive
•Communication.
DESCRIPTION
The BAW101 is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT1 43B plastic SMD package.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BAW101 ∗AB
PIN DESCRIPTION
1cathode 1
2cathode 2
3anode 2
4anode 1
handbook, halfpage
43
21
Top view MAM059
2
3
4
1
Fig.1 Simplified outline (SOT143B) and symb ol.
2003 May 13 3
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board , c athode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −300 V
series connec tio n −600 V
VRRM repetitive peak reverse voltage −300 V
series connec tio n −600 V
IFcontinuous forward current single diode loaded; note 1; see Fig.2 −250 mA
double diode loaded; note 1; see Fig.2 −140 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repe titive peak forward
current square wave; Tj = 25 °C prior to surge;
t = 1 µs−4.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −350 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VBR(R) reverse breakdown vo ltage IR = 100 µA300 −V
VFforward voltage IF = 100 mA; note 1 −1.1 V
IRreverse current VR = 250 V −150 nA
VR = 250 V; Tamb = 150 °C−50 µA
trr reverse recove ry time when switched from IF = 30 mA to IR = 30 mA;
RL = 100 Ω; measured at IR = 3 mA −50 ns
Cddiode capacitance VR = 0 V; f = 1 MHz −2pF
2003 May 13 4
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
THERMAL CHARACTE RISTICS
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board , c athode-lead mounting pad = 1 cm2.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 255 K/W
Rth j-a thermal resistance from junction to ambient note 2 357 K/W
GRAPHICAL DATA
handbook, halfpage
0
(1)
(2)
50 100 Tamb (°C)
IF
(mA)
200
300
0
100
200
150
MLE057
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm2.
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
(1) Single diode loaded. (2) Double diode loaded.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1VF (V)
(1) (3)(2)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
2003 May 13 5
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, halfpage
200100500 150
102
10
1
10−1
10−2
MLE058
(1) (2)
Tj (°C)
IR
(µA)
Fig.5 Reverse current as a fun ction of junction
temperature.
(1) VR = VRMAX: maximum values.
(2) VR = VRMAX: typical values.
handbook, halfpage
02 10
0.6
0.5
0.3
0.2
0.4
4VR (V)
Cd
(pF)
68
MLE059
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
2003 May 13 6
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
handbook, halfpage
050 Tamb (°C)
VR
(V)
100 200
400
300
100
0
200
150
MLE060
Fig.7 Maximum permissible co ntinuous reverse
voltage as a function of ambient
temperature.
2003 May 13 7
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
21
34
b1
bp
2003 May 13 8
NXP Semiconductors Pr oduct data sheet
High voltage double diode BAW101
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betwee n information
in this document an d such terms and conditio ns, the latter
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p ar t o f an y q uot ation or co ntract, is believed to be accurate a nd reliable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/01/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11147
