IRF640S, SiHF640S, SiHF640L
www.vishay.com Vishay Siliconix
S16-0014-Rev. E, 18-Jan-16 1Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
• Dynamic dV/dt rating
• 150 °C operating temperature
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.
PRODUCT SUMMARY
VDS (V) 200
RDS(on) ()V
GS = 10 V 0.18
Qg max. (nC) 70
Qgs (nC) 13
Qgd (nC) 39
Configuration Single
D
2
PAK (TO-263)
GD
S
I
2
PAK (TO-262)
GDS
Available
Available
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3
a SiHF640STRR-GE3 a SiHF640L-GE3
Lead (Pb)-free IRF640SPbF IRF640STRLPbF a IRF640STRRPbF a -
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
18
ATC = 100 °C 11
Pulsed Drain Current a, e IDM 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy b, e EAS 580 mJ
Avalanche Current aIAR 18 A
Repetitive Avalanche Energy aEAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD
130 W
TA = 25 °C 3.1
Peak Diode Recovery dV/dt c, e dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Soldering Recommendations (Peak temperature) dfor 10 s 300