wa GBJ8005GBJ810 VISHAY Vishay Lite-On Power Semiconducter 8.0A Glass Passivated Bridge Rectifier Features Glass passivated die construction High case dielectric strength of 1500Vanms Low reverse leakage current Surge overload rating to 170A peak Ideal for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0 e ULRecognized file E95060 Absolute Maximum Ratings = 25C Repetitive peak reverse voltage GBJ8005 Vrru 50 Vv =Working peak reverse voltage GBJ801 =VawM 100 Vv =DC Blocking voltage GBuJ802 =VpR 200 V GBJ804 400 Vv GBJ806 600 Vv GBJ808 800 Vv GBJ810 1000 Vv Peak forward surge current lesm 170 A Average forward current Te=110C lEAy 8 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ip=4A Ve 1 Vv Reverse current Te=25C IR 5 uA To=1 25C IR 500 uA I@t Rating for fusing 4 120 | As Diode capacitance VpR=4V, f=1MHz Cp 55 pF Thermal resistance mounted on Rthuc 5 KAW junction to case 100x100x1.6mm aluminum plate Rev. A2, 24-Jun-98 1 (4)GBJ8005GBJ810 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) _ 10 100 < _ : w c a g 8 with heatsink \ ~ 3 Q Oo \ @ 2 6 S w o 3 \ % 3 w 10 LL \ Oo % 4 o s \ 8 ; 5 N A without heatsink a < > AN h i | . z N\ oO ~ Resistive or inductive load 1 0 ee 25 50 75 100 =: 125-150 1 10 100 15645 Tamb Ambient Temperature ( C ) 15648 Va Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 10 1000 = x <x = T) = 125C = = 100 ! c c o 10 g Tj= 100C a a o o PR 10 s 5 5 5 we OO cc 7) =50C I I uu _o LO T= 25C T)= 25C IF Pulse Width = 300 ps 0.01 0.1 0 04 0.8 1.2 16 18 0 20 40 60 80 100 120 140 15646 Ve Forward Voltage ( V ) 15649 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 180 160 Single Half Sine-Wave (JEDEC Method) T; = 150C 120 80 40 legy7 Peak Forward Surge Current (A) 1 10 100 15647 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98. GBJ8005GBJ810 VISHAY Vishay Lite-On Power Semiconducter Dimensions in mm L - A ~ GBJ M K Uim Min Max \ TP A | 29.70 30.30 | B | 19.70 20.30 - | cl} 17.00 | 18.00 + Pa . o[ 380 | 4.20 . FE! 7.30 7.10 oh ++ VM G 9.80 10.20 ot | H 2.00 2.4.0 S i! 0.90 110 A J 2.30 2.70 y L kK 3.0x45 | L | 4.40 1.80 R - MT 3.40 3.80 p N |} 6310 | 3.40 b E p | 250 7.90 R| 0.60 0.80 5] 10.80 11.20 Al Dimensions in mm technical drawings according to DIN specifications 14471 Case: molded plastic Polarity: molded on body Approx. weight: 6.6 grams Mounting: through hole for #6 screw Mounting torque: 5.0 inlbs maximum Marking: type number Rev. A2, 24-Jun-98 3 (4)GBJ8005GBJ810 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98